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Text: 2N1050B Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)750m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)15u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)2.0 @I(C) (A) (Test Condition)500m
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2N1050B
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Text: 2N1049B Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)750m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)15u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)2.0 @I(C) (A) (Test Condition)500m
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Abstract: No abstract text available
Text: 2N1047B Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)750m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)15u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)2.0 @I(C) (A) (Test Condition)500m
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Abstract: No abstract text available
Text: 2N1048B Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)750m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)15u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)2.0 @I(C) (A) (Test Condition)500m
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