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Text: BCW60D Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)32 V(BR)CBO (V)32 I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m’ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)20n @V(CBO) (V) (Test Condition)32 V(CE)sat Max. (V).55 @I(C) (A) (Test Condition)50m
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Text: BCX51-6 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)45è V(BR)CBO (V)45 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)140õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: BCW60DL Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)32 V(BR)CBO (V)32 I(C) Max. (A)200m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)20nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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BCW60DL
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Text: BCW60C Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)32 V(BR)CBO (V)32 I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m’ Maximum Operating Temp (øC)175õ I(CBO) Max. (A)20n @V(CBO) (V) (Test Condition)32 V(CE)sat Max. (V).55 @I(C) (A) (Test Condition)50m
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BCW60C
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Text: BCW60AR Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)32 V(BR)CBO (V)32 I(C) Max. (A)200m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)20nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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BCW60AR
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Text: BCW60BL Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)32 V(BR)CBO (V)32 I(C) Max. (A)200m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)20nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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BCW60BL
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Text: BCX70 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)800m Absolute Max. Power Diss. (W)620m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)20nØ @V(CBO) (V) (Test Condition)45 V(CE)sat Max. (V)550m @I(C) (A) (Test Condition)50m
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BCX70
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Text: SST5101 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)200m Absolute Max. Power Diss. (W) Maximum Operating Temp (øC) I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)55 V(CE)sat Max. (V).15 @I(C) (A) (Test Condition)10m
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SST5101
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Text: KSP70 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V) I(C) Max. (A)100m Absolute Max. Power Diss. (W) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)
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Text: BCW60BR Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)32 V(BR)CBO (V)32 I(C) Max. (A)200m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)20nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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BCW60BR
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Text: BCX70HR Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)200m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)20nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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BCX70HR
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Text: BCX70KLT1 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)200m Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)20nx @V(CBO) (V) (Test Condition)45 V(CE)sat Max. (V).55 @I(C) (A) (Test Condition)50m
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Text: BCW60CL Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)32 V(BR)CBO (V)32 I(C) Max. (A)200m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)20nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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BCW60CL
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Text: 2NL3799 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V) I(C) Max. (A)100m Absolute Max. Power Diss. (W) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.
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Text: PT7942 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A) Absolute Max. Power Diss. (W)220 Maximum Operating Temp (øC)175’ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.20 h(FE) Max. Current gain.
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Text: MPQ3467 Transistors Independent Transistor Array Military/High-RelN Number of Devices4 Type NPN/PNP V(BR)CEO (V)40 V(BR)CBO (V) I(C) Max. (A)1.0 P(D) Max. (W)1.5 Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)
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Text: FZT953 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)140 I(C) Max. (A)5 Absolute Max. Power Diss. (W)3 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V).44 @I(C) (A) (Test Condition)4
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Text: SMBTA63 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)500m Absolute Max. Power Diss. (W)360m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.5.0k
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Text: MMBTA20LT1 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)100m Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V).25 @I(C) (A) (Test Condition)10m
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Text: KST63 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)30 V(BR)CBO (V) I(C) Max. (A)500m Absolute Max. Power Diss. (W) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.10k h(FE) Max. Current gain.
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Text: BCW60AL Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)32 V(BR)CBO (V)32 I(C) Max. (A)200m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)20nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: PT7947 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)140 V(BR)CBO (V)200 I(C) Max. (A) Absolute Max. Power Diss. (W)220 Maximum Operating Temp (øC)175’ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.20 h(FE) Max. Current gain.
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Text: 2SC1259 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)18 V(BR)CBO (V)36 I(C) Max. (A)6.0 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)2.0mØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.15 h(FE) Max. Current gain.
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Text: FMMTA20R Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V) I(C) Max. (A)100m Absolute Max. Power Diss. (W)330m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V).25 @I(C) (A) (Test Condition)10m
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