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Text: 40886 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300ö V(BR)CBO (V)350 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.4 Maximum Operating Temp (øC)135õ I(CBO) Max. (A)50uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Abstract: No abstract text available
Text: 2N1118+JAN Transistors Si PNP Lo-Pwr BJT Military/High-RelY V BR CEO (V)25 V(BR)CBO (V)25 I(C) Max. (A)50m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)10 V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2N1118
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Abstract: No abstract text available
Text: 2N6177/39 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)350 V(BR)CBO (V)450 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)20# Maximum Operating Temp (øC)135þ I(CBO) Max. (A)20u @V(CBO) (V) (Test Condition)360 V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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eq21M
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Untitled
Abstract: No abstract text available
Text: 2N1118 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)25 I(C) Max. (A)50m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)10 V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2N1118
Freq21M
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