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Text: A580-1802 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)180ö V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)135m° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: A580-1605 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)160ö V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)120m° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: A580-2205 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)220ö V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)165m° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: A580-2402 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)240ö V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)180m° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: A580-2403 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)240ö V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)180m° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: A580-1602 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)160ö V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)120m° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: A580-2203 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)220ö V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)165m° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 2N1075 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)50 I(C) Max. (A)50m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)160þ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)8.0m
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Text: 2CY30 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)64 V(BR)CBO (V)64 I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)175’ I(CBO) Max. (A)20u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 2CY31 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)64 V(BR)CBO (V)64 I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)175’ I(CBO) Max. (A)20u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 2N2566 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)80 I(C) Max. (A)3.5 Absolute Max. Power Diss. (W)20# Maximum Operating Temp (øC)100# I(CBO) Max. (A)125u @V(CBO) (V) (Test Condition)40 V(CE)sat Max. (V).25 @I(C) (A) (Test Condition)1.0
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Text: AUY28 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)65 V(BR)CBO (V)90 I(C) Max. (A)6.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)100õ I(CBO) Max. (A)1.5m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: A580-1805 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)180ö V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)135m° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 2N6358 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)20 Absolute Max. Power Diss. (W)150# Maximum Operating Temp (øC)150õ I(CBO) Max. (A)5.0m° @V(CBO) (V) (Test Condition)50 h(FE) Min. Current gain.1.5k
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Text: A580-2005 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)200ö V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)150m° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: MHT1902 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)65 Absolute Max. Power Diss. (W)140 Maximum Operating Temp (øC)125õ I(CBO) Max. (A)5.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 2N2560 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)40 I(C) Max. (A)3.5 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)100# I(CBO) Max. (A)125u @V(CBO) (V) (Test Condition)20 V(CE)sat Max. (V).25 @I(C) (A) (Test Condition)1.0
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Text: A580-2405 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)240ö V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)180m° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 2N2836 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)55ã V(BR)CBO (V)55 I(C) Max. (A)3.5 Absolute Max. Power Diss. (W)37 Maximum Operating Temp (øC)100# I(CBO) Max. (A)50uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 2N2564 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)40 I(C) Max. (A)3.5 Absolute Max. Power Diss. (W)20# Maximum Operating Temp (øC)100# I(CBO) Max. (A)125u @V(CBO) (V) (Test Condition)20 V(CE)sat Max. (V).25 @I(C) (A) (Test Condition)1.0
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Text: 2N2655 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)500m Absolute Max. Power Diss. (W)15 Maximum Operating Temp (øC)175# I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: A580-1603 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)160ö V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)120m° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: A580-1803 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)180ö V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)135m° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: A580-2202 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)220ö V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)165m° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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