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Text: BC558 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)625m’ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)20 h(FE) Min. Current gain.120 h(FE) Max. Current gain.800
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BC558
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Text: BC558B Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)625m’ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)20 V(CE)sat Max. (V).65 @I(C) (A) (Test Condition)100m
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BC558B
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Text: BC558C Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)625m’ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)20 h(FE) Min. Current gain.420 h(FE) Max. Current gain.800
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BC558C
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Text: BC309C Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)25 I(C) Max. (A)100m Absolute Max. Power Diss. (W)350m Minimum Operating Temp (øC)-55õ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)40
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BC309C
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Text: BC558A Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)625m’ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)20 h(FE) Min. Current gain.120 h(FE) Max. Current gain.220
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BC558A
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