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Text: MAT01AH/883 Transistors NPN Monolithic Transistor Pair Number of Devices2 Type NPN/PNP NPN V(BR)CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)25m P(D) Max. (W)1.8m Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)125 I(CBO) Max. (A)80p @V(CBO) (V) (Test Condition)30
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MAT01AH/883
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Text: TSQ2369F/C Transistors Independent Transistor Array Military/High-RelN Number of Devices4 Type NPN/PNP V(BR)CEO (V)15 V(BR)CBO (V) I(C) Max. (A)200m P(D) Max. (W)1.5 Minimum Operating Temp (øC)-65 Maximum Operating Temp (øC)200 I(CBO) Max. (A) @V(CBO) (V) (Test Condition)
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TSQ2369F/C
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Text: BF125 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)30 V(BR)CBO (V) I(C) Max. (A)30m Absolute Max. Power Diss. (W)330m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)
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BF125
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Text: DTG1110 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)200º V(BR)CBO (V) I(C) Max. (A)15 Absolute Max. Power Diss. (W)106 Maximum Operating Temp (øC)125õ I(CBO) Max. (A)15m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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DTG1110
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Text: 2SA1764 Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)15 I(C) Max. (A)200m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)8.0
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2SA1764
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Text: 2SC3391 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)30 I(C) Max. (A)20m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A)0.5u @V(CBO) (V) (Test Condition)
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2SC3391
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Text: 2SC2999 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)25 I(C) Max. (A)30m Absolute Max. Power Diss. (W)150m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)10
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2SC2999
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Text: TSQ2369D/C Transistors Independent Transistor Array Military/High-RelN Number of Devices4 Type NPN/PNP V(BR)CEO (V)15 V(BR)CBO (V) I(C) Max. (A)200m P(D) Max. (W)1.5 Minimum Operating Temp (øC)-65 Maximum Operating Temp (øC)200 I(CBO) Max. (A) @V(CBO) (V) (Test Condition)
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TSQ2369D/C
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Text: 2SC1528 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)18 V(BR)CBO (V)40 I(C) Max. (A)2.5 Absolute Max. Power Diss. (W)25 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A)500uØ @V(CBO) (V) (Test Condition)
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2SC1528
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Text: 2SC4452-2 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)200m Absolute Max. Power Diss. (W)150m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)20
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2SC4452-2
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Text: 2N2510 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)65 V(BR)CBO (V)100 I(C) Max. (A)200m Absolute Max. Power Diss. (W)360m Maximum Operating Temp (øC)200# I(CBO) Max. (A)5.0n @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)5.0m
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2N2510
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Text: 2SA1765 Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)15 I(C) Max. (A)200m Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)8.0
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2SA1765
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Text: 2N3547 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)100m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)175þ I(CBO) Max. (A)25nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2N3547
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Text: MAT01GH/883 Transistors NPN Monolithic Transistor Pair Number of Devices2 Type NPN/PNP NPN V(BR)CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)25m P(D) Max. (W)1.8m Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)125 I(CBO) Max. (A)80p @V(CBO) (V) (Test Condition)30
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Text: MAT01GH Transistors NPN Monolithic Transistor Pair Number of Devices2 Type NPN/PNP V(BR)CEO (V)45 V(BR)CBO (V) I(C) Max. (A)25m P(D) Max. (W)500m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.77
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MAT01GH
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Text: AD148 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)26 V(BR)CBO (V)32 I(C) Max. (A)3.5 Absolute Max. Power Diss. (W)11 Maximum Operating Temp (øC)100õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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AD148
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Text: 2SC4452-4 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)200m Absolute Max. Power Diss. (W)150m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)20
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2SC4452-4
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Text: 2N5244 Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)100m Absolute Max. Power Diss. (W)360m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A)15nx @V(CBO) (V) (Test Condition)
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2N5244
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Text: 2SC4453-2 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)40 I(C) Max. (A)200m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)20
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2SC4453-2
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Text: 2N3426 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)12 V(BR)CBO (V)25 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)600m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)100ux @V(CBO) (V) (Test Condition)15
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2N3426
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Text: MMPQ2369 Transistors Independent Transistor Array Military/High-RelN Number of Devices4 Type NPN/PNP V(BR)CEO (V)15 V(BR)CBO (V) I(C) Max. (A)500m P(D) Max. (W)1.9 Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)
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MMPQ2369
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Text: AD143 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)40â V(BR)CBO (V)40 I(C) Max. (A)10 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)100õ I(CBO) Max. (A)100uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: AD145 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)15 I(C) Max. (A)10 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)100õ I(CBO) Max. (A)160uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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AD145
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Text: MAT01AH Transistors NPN Monolithic Transistor Pair Number of Devices2 Type NPN/PNP NPN V(BR)CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)25m P(D) Max. (W)1.8m Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)125 I(CBO) Max. (A)50p @V(CBO) (V) (Test Condition)30
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MAT01AH
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