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Text: CEN-U51 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V) I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)10# Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)500m @I(C) (A) (Test Condition)1.0
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Text: 2N5941 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)65 I(C) Max. (A)6.0 Absolute Max. Power Diss. (W)80# Maximum Operating Temp (øC)200þ I(CBO) Max. (A)5.0m¥x @V(CBO) (V) (Test Condition)28 V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: BCP52 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: HEPS3028 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)50 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)8.0 Maximum Operating Temp (øC)135õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: DTL3508 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V) I(C) Max. (A)0.5 Absolute Max. Power Diss. (W)7.0 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)
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Text: 2N6353 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)150ã V(BR)CBO (V)150 I(C) Max. (A)10 Absolute Max. Power Diss. (W)25# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0ux @V(CBO) (V) (Test Condition)150 h(FE) Min. Current gain.1.0k
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Text: 2N5672+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)150º V(BR)CBO (V)150 I(C) Max. (A)30 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)12m¶ @V(CBO) (V) (Test Condition)135 V(CE)sat Max. (V).75 @I(C) (A) (Test Condition)15
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Text: CEN-U02 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V) I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)10# Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)400m @I(C) (A) (Test Condition)150m
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Text: 2SC1520 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)250 V(BR)CBO (V)250 I(C) Max. (A)200m Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: FZT758 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)400 I(C) Max. (A)500m Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)320 V(CE)sat Max. (V).5 @I(C) (A) (Test Condition)100m
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Text: AP30-12L Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)36ã V(BR)CBO (V) I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)65 Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: DTL3512 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V) I(C) Max. (A)0.5 Absolute Max. Power Diss. (W)29 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)
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Text: 2SD886 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: BCP52-16 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 2SC2987 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)140 V(BR)CBO (V)140 I(C) Max. (A)12 Absolute Max. Power Diss. (W)120 Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: PT6984 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)250 V(BR)CBO (V)250 I(C) Max. (A)30 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0mØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: FZT458 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)400 I(C) Max. (A)400m Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V).5 @I(C) (A) (Test Condition)50m
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Text: 2N6352+JANTX Transistors NPN Darlington Transistor Military/High-RelY V BR CEO (V)80ã V(BR)CBO (V)80 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)25# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0ux @V(CBO) (V) (Test Condition)80 h(FE) Min. Current gain.2.0k
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Text: 2N6032+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)90 V(BR)CBO (V)120 I(C) Max. (A)50 Absolute Max. Power Diss. (W)80# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)12m¶ @V(CBO) (V) (Test Condition)110 V(CE)sat Max. (V)1.3 @I(C) (A) (Test Condition)50
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Text: 2N3876 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)140 I(C) Max. (A)10 Absolute Max. Power Diss. (W)125 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)30m÷ @V(CBO) (V) (Test Condition)139 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)10
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Text: CEN-U01 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V) I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)10# Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)500m @I(C) (A) (Test Condition)1.0
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osc 50mhz smd 5x7
Abstract: Sunny TCXO Motorola lv93 plastic raw material CRYSTAL SMD 25MHZ SUNNY NPC 5037 Sunny 50MHz sm5545tev Alcatel-Lucent SM7745DV
Text: Pletronics, Inc. Design/Idea Workshop Agenda & Content Guideline Integrated Supply Chain Motorola Confidential and Proprietary 1 Agenda 1. Overview 2. Key Financial Measures 3. Technology Roadmap 4. Manufacturing Flow Diagram 5. Cost Breakdown Integrated Supply Chain
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Text: BSS63L Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)110 I(C) Max. (A)100m Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: FMMT593 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V).2 @I(C) (A) (Test Condition)250m
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