Untitled
Abstract: No abstract text available
Text: FC140 Transistors NPN Multi-Chip Composite Transistor Pair Military/High-RelN Number of Devices1 Type NPN/PNP V(BR)CEO (V)15 V(BR)CBO (V)40 I(C) Max. (A)200m P(D) Max. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)
|
Original
|
FC140
Freq750MÃ
StyleSOT-25var
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SC3142J2 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)25 I(C) Max. (A)30m Absolute Max. Power Diss. (W)150m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)
|
Original
|
2SC3142J2
Freq750M
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SC4918A6 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)18 V(BR)CBO (V)40 I(C) Max. (A)50m Absolute Max. Power Diss. (W)150m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)
|
Original
|
2SC4918A6
Freq750MÃ
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SC3732M Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)40 I(C) Max. (A)200m Absolute Max. Power Diss. (W)250m Minimum Operating Temp (øC) Maximum Operating Temp (øC)135õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)
|
Original
|
2SC3732M
Freq750M
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SC4987 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)40 V(BR)CBO (V) I(C) Max. (A)200m Absolute Max. Power Diss. (W)150m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)
|
Original
|
2SC4987
Freq750MÃ
|
PDF
|
Untitled
Abstract: No abstract text available
Text: KSC2758 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)30 I(C) Max. (A)20m Absolute Max. Power Diss. (W)150m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)
|
Original
|
KSC2758
Freq750M
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SC1070 2 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V(BR)CEO (V)25 V(BR)CBO (V)30 I(C) Max. (A)20m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)
|
Original
|
2SC1070
Freq750M
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2N509 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)30 I(C) Max. (A)40m Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)100õ I(CBO) Max. (A)5.0u @V(CBO) (V) (Test Condition)20 h(FE) Min. Current gain. h(FE) Max. Current gain.
|
Original
|
2N509
Freq750MÃ
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2N3478 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)30 I(C) Max. (A) Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200þ I(CBO) Max. (A)20n @V(CBO) (V) (Test Condition)1.0
|
Original
|
2N3478
Freq750M
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SC3142J4 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)25 I(C) Max. (A)30m Absolute Max. Power Diss. (W)150m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)
|
Original
|
2SC3142J4
Freq750M
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SC613 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)40 I(C) Max. (A)200m Absolute Max. Power Diss. (W)360m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A).10u @V(CBO) (V) (Test Condition)
|
Original
|
2SC613
Freq750M
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HEPG0002 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)22â V(BR)CBO (V)22 I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)12u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.75 h(FE) Max. Current gain.
|
Original
|
HEPG0002
Freq750M
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SC3142J3 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)25 I(C) Max. (A)30m Absolute Max. Power Diss. (W)150m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)
|
Original
|
2SC3142J3
Freq750M
|
PDF
|