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Text: BAT17 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandUHF Test Freq900M Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)8.0 Maximum Conversion Loss (dB)
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BAT17
Freq900M
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Text: 2N4262 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)25 I(C) Max. (A)200m Absolute Max. Power Diss. (W)1.5 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100n÷ @V(CBO) (V) (Test Condition)
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2N4262
Freq900M
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Text: MPS5179 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)12 V(BR)CBO (V)20 I(C) Max. (A)50m Absolute Max. Power Diss. (W)200m’ Minimum Operating Temp (øC)-55õ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)20n @V(CBO) (V) (Test Condition)15
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MPS5179
Freq900M
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Text: 2SC252 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)30 I(C) Max. (A)30m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition)
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2SC252
Freq900M
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Text: 2SC3136 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)30 I(C) Max. (A)50m Absolute Max. Power Diss. (W)250m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)
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2SC3136
Freq900M
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Text: D10-28B Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)50â V(BR)CBO (V)50 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)17 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)
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D10-28B
Freq900M
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Text: D5-28B Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)50â V(BR)CBO (V)50 I(C) Max. (A)500m Absolute Max. Power Diss. (W)11 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)
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D5-28B
Freq900M
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Text: 2N5770 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)30 I(C) Max. (A)50m Absolute Max. Power Diss. (W)700m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150þ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)15
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2N5770
Freq900M
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2N5200
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Text: 2N5200 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)20 I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A).01uØ @V(CBO) (V) (Test Condition)
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2N5200
Freq900M
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Text: 40474 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)45 I(C) Max. (A)50m Absolute Max. Power Diss. (W)180m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition)
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Freq900M
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Text: D20-28B Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)50â V(BR)CBO (V)50 I(C) Max. (A)2.5 Absolute Max. Power Diss. (W)32 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)
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D20-28B
Freq900M
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Text: CMPT5179 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)12 V(BR)CBO (V)20 I(C) Max. (A)50m Absolute Max. Power Diss. (W)350m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)20n @V(CBO) (V) (Test Condition)15
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CMPT5179
Freq900M
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Text: S5327E Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)30 I(C) Max. (A) Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A).10uØ @V(CBO) (V) (Test Condition)
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S5327E
Freq900M
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Abstract: No abstract text available
Text: 2SC251 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)30 I(C) Max. (A)30m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition)
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2SC251
Freq900M
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