2sc5066
Abstract: MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136
Text: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Bipolar Power Transistors Radio-Frequency Diodes Radio-Frequency Power Amp ICs
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SCE0004I
2SC380TM
2sc5066
MT3S111P
MT3S111
toshiba transistors catalog
TIM4450-4UL
TGI1314-50L
MT3S106
MT4S200T
X-band low noise amplifiers toshiba
2SC3136
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MT4S300T
Abstract: TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T
Text: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Diodes Small-Signal MMICs Radio-Frequency Cell Packs Microwave Semiconductors
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2010/9SCE0004K
2SC1923
MT4S300T
TGI0910-50
MT3S111P
2SC3136
S8850AF
TA4032FT
MT4S300U
VHF-UHF Band oscillator
2sc5108
MT4S301T
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MT3S111P
Abstract: 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293
Text: Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors z 280 Radio-Frequency Small-Signal FETs z 283 Radio-Frequency Power MOSFETs z 284 Radio-Frequency Bipolar Power Transistors z 284 Radio-Frequency Diodes z 285 Small-Signal MMICs Radio-Frequency Cell Packs z 287
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2SC941TM
2SC3136
TIM7179-45SL
TIM7179-60SL
TIM7785-4SL
TIM7785-4UL
TIM7785-6UL
TIM7785-8SL
TIM7785-8UL
TIM7785-12UL
MT3S111P
2SC3136
2SC4250FV
TIM0910-8
TA4029CTC
tim8996-30
TA4029
TMD1925-3
2SC5066
3SK293
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Untitled
Abstract: No abstract text available
Text: Frequency Transducer DIN RAIL / PANEL MOUNT The CR6600 Series, Frequency Transducers and Transmitters are designed to give a DC output that is proportional to an input frequency value. These devices are especially suited to variable frequency systems. Applications
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CR6600
CR6610
CR6611
CR6612
CR6620
CR6621
CR6622
61010B-1
CAN/CSA-C22
CR6612
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SAW Devices
Abstract: saw device Ultrasonic Cleaning Transducer ultrasonic piezoelectric 10MHz 3GHz bandpass filter ULTRASONIC transducers Mhz 2 MHZ ULTRASONIC transducers ULTRASONIC cleaning transducers Automotive ULTRASONIC transducers PASSIVE line level ultrasonic filter
Text: APPLICATION NOTES SAW DEVICES GLOSSARY OF TERMS ENVIRONMENTAL AND MECHANICAL SPECIFICATIONS Nominal frequency Fn : The nominal values of the center frequency F0 and is used as the reference frequency of related standard. Unit of nominal frequency is in MHz.
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10MHz
500MHz)
200MHz
600MHz)
SAW Devices
saw device
Ultrasonic Cleaning Transducer
ultrasonic piezoelectric 10MHz
3GHz bandpass filter
ULTRASONIC transducers Mhz
2 MHZ ULTRASONIC transducers
ULTRASONIC cleaning transducers
Automotive ULTRASONIC transducers
PASSIVE line level ultrasonic filter
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QEV203
Abstract: No abstract text available
Text: QEV 203 SMD 30x25x5 High Frequency VCXO Technical specifications TEMEX TIME & FREQUENCY June 2001, The QEV 203 series is a new range of high frequency VCXO’s @ 622.08 & 666.5143 MHz dedicated to transmission as advanced SDH / SONET applications. These devices are based on high frequency
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30x25x5
QEV203
08MHz
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Temex qev
Abstract: QEV110 110 SMD
Text: QEV 110 SMD 20 x 13 x 10 High Frequency VCXO Technical specifications TEMEX TIME & FREQUENCY June 2001, The QEV 110 series is a new range of high frequency VCXO’s @ 622.08 & 666.5143 MHz dedicated to transmission as advanced SDH / SONET applications. These devices are based on high frequency
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QEV110
08MHz
Temex qev
110 SMD
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CV10S
Abstract: No abstract text available
Text: Connectors High frequency Radio frequency Frequency range to 3GHz • Small size Coaxial Connectors Push-on coupling CV10 Series Connectors CV10 series small size coaxial connectors are ideal for highdensity, reduced size, high frequency devices. Receptacle can be mounted in an area of 4 x 4 mm on
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CV10-PLP-F-0
CV10-RLP-F-0
CV10-SMA-AS-MF
CV10-SMA-AS-FF
CV10-RP-M-0
CV10S
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Untitled
Abstract: No abstract text available
Text: Equalizers Definition of Parameters Frequency Range - The operating frequency band specified by the user over which the microwave system or devices must exhibit the desired attenuation vs. frequency response and must otherwise perform to the required specifications. Frequency bandwidths can vary from less than 1% to multi-octave and can occur
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500MHz
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SI4133
Abstract: Si4115G-BM si4115 GSM "Frequency Synthesizers" Si4112 Si4113 Si4113G Si4122 Si4123 Si4126
Text: Silicon Laboratories - Products Back Integrated Radio Frequency Synthesizers Generate high-frequency signals used in wireless communication devices to select a particular radio channel. Part No. Si4133 Description Frequency Range Derivatives General Purpose RF Synthesizer
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Si4112
Si4113
Si4133
Si4115G
Si4122
Si4123
Si4133G
Si4113G
Si4122G
Si4123G
SI4133
Si4115G-BM
si4115
GSM "Frequency Synthesizers"
Si4112
Si4113
Si4122
Si4123
Si4126
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GT30F131
Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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SCE0004L
TTC4116*
2SC4118
TTA1586*
2SA1588
2SC4117
2SA1587
2SC5233
2SC4738
2SA1832
GT30F131
GT30F124
TK18A60V
smd m5 transistor 6-pin
SMD TRANSISTOR H2A NPN
GT50N322
MARKING SMD PNP TRANSISTOR h2a
GT30J124
*30f124
TPCP8R01
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GT30F124
Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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2010/9SCE0004K
SC-43)
2SC1815
700the
GT30F124
TPCP8R01
GT30J124
JAPANESE 2SC TRANSISTOR 2010
smd transistor h2a
smd marking 8L01
tk25e06k3
GT45F122
gt30g124
GT30F123
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GT30J124
Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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SCE0004I
SC-43)
2SC1815
GT30J124
smd transistor h2a
gt45f122
TPCP8R01
GT30F123
2sc1815 smd type
smd marking 8L01
h2a smd
2SC5471
2sc5200 amplifiers circuit diagram
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frequency counter
Abstract: No abstract text available
Text: THROUGH HOLE CLOCK OSCILLATORS-ECL SERIES CO35 AND CO36 FEATURES FREQUENCY RANGE TO 200.00 MHz BEST SUITED FOR ECL LOGIC DEVICES AVAILABLE WITH COMPLIMENTARY OUTPUT SPECIFICATIONS SERIES FREQUENCY RANGE COMPLIMENTARY OUTPUTS FREQUENCY STABILITY† OPERATING TEMPERATURE RANGE
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CO36100
CO36200
CO35100
CO35200
CO36200-150
frequency counter
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second order low pass filter application
Abstract: WCDMA receiver baseband UMTS 20 band equalizer
Text: HIGH FREQUENCY DEVICES HIGH FREQUENCY ACTIVE FILTERS AF Series FEATURES • Wide filtering frequency range available up to 30MHz ■ High precision: (examples) 1) 0.3dB typical pass band ripple for AFC820YL630KK1T 2) 4mrad2 typical phase distortion for AFC820YL630KK1T
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30MHz)
AFC820YL630KK1T
30nsec.
AFM834YL1900KK1
28dBm
cdma2000,
AFM834YL1900KK1
second order low pass filter application
WCDMA receiver baseband UMTS
20 band equalizer
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AD896
Abstract: No abstract text available
Text: ANALOG DEVICES □ FEATURES 7th Order Bessel Filter Programmable Characteristics Cutoff Frequency Boost Amplitude Tw o Versions 13 MHz Max Cutoff Frequency AD896-13 23 M Hz Max Cutoff Frequency AD896-23 Fully Differential Data Path ±10% Cutoff Frequency Accuracy
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AD896-13
AD896-23
16-Pin
AD896
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Untitled
Abstract: No abstract text available
Text: 6Cin BblCOKOMaCTOTHblH TpHOfl H igh-frequency triode BbicoKO^acTOTHfaiH TpHOA 6 C in The 6C in high-frequency triode is designed for am plification of high-frequency voltage. The 6C in high-frequency triodes are m inia ture devices enclosed in glass bulb and provided
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OCR Scan
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PDF
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B03fleHCTBHK)
bo3/16hctbhk)
Harpy30K
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R2501
Abstract: VE31 0002dB 450-0K1 450-10K0 r 2501
Text: S7E D • 373113G 0D02E71 3S1 « F R E FREQUEIICV 450 SERIES: SINGLE PHASE, DEVICES ' FIXED FREQUENCY SINEWAVE OSCILLATORS 215 FREQUENCY DEVICES INC <T - S 0 * 5 ' FEATURES • High Purity Sinewave O utput • User-Specified O perating Frequency Any Frequency from 100Hz to 10kHz
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373113G
100Hz
10kHz
002dB/Â
20Vp-p
GGG2277
450-0K1
450-3K55
55kHz
R2501
VE31
0002dB
450-10K0
r 2501
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6c3e
Abstract: ACCM 6S3P 6C311-E
Text: BblCOKOHaCTOTHW H T pH O U 6C3I1-E High-frequency triode BblCOKOqaCTOTHblft AOJirOBe^HblH The 6C3Ei-E long-life high-frequency triode is designed for amplification of high-frequency vol tage. The 6C3n-E high-frequency triodes are minia ture devices enclosed in glass bulb and provided
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6C311-E
Harpy30K:
6c3e
ACCM
6S3P
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Untitled
Abstract: No abstract text available
Text: Equalizers Definition of Parameters Frequency Range - The operating frequency band specified by the user over which the microwave system or devices must exhibit the desired attenuation vs. frequency response and must other wise perform to the required specifications. Frequency bandwidths can vary from less than 1% to multi-octave and can occur
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OCR Scan
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500MHz
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Untitled
Abstract: No abstract text available
Text: Power GaAs FE T Selection Guide Devices by Power by Frequency 49.0 Jmmtm Jm - 2.0 4.0 6.0 8.0 10.0 14.0 16.0 20.0 Frequency GHz Typical Linear Gain vs. Frequency Unmatched Driver Devices 24.0 21.0 18.0 15.0 CÛ •o Ç ■<S o 12.0 (5 CD c 0.3 10.0 1.0 Frequency (GHz)
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Untitled
Abstract: No abstract text available
Text: Equalizers Definition of Parameters Frequency Range - The operating frequency band specified by the user over which the microwave system or devices must exhibit the desired attenuation vs. frequency response and must other wise perform to the required specifications. Frequency bandwidths can vary from less than 1% to multi-octave and can occur
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OCR Scan
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PDF
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500MHz
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ad652
Abstract: No abstract text available
Text: ANALOG Synchronous Voltage-to-Frequency and DEVICES Frequency-to-Voltage Converter _ AD652 □ 1.1 Scope. This specification covers the detail requirements for a voltage-to-frequency with full-scale range of up to 2MHz. 1.2 Part Number.
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AD652
AD652S
/883B
E-20A
16-Lead
20-Terminal
250kil
ad652
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Untitled
Abstract: No abstract text available
Text: ANALOG Synchronous Voltage-to-Frequency and DEVICES Frequency-to-Voltage Converter _ AD652 1.1 Scope. This specification covers the detail requirements for a voltage-to-frequency with full-scale range of up to 2MHz. 1.2 Part N um ber.
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AD652
AD652S
/883B
ADI-M-1000:
E-20A
16-Lead
20-Terminal
250kfl
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