Guardmaster EN1088
Abstract: BS5304 EN1088 GS-ET-15 GuardMaster wn2 4hr GuardMaster safety switch GS-ET15 BS53 wn2 4HR JET 2A 250V
Text: INSTALLATION INSTRUCTIONS MONTAGEANLEITUNG / NOTICE D'INSTALLATION 4 1mm min 2.5mm max 2 x M4 2 6 2 x M4 5 1 3 2.5mm y Entr End mm & nt Fro in. 150 m B1 B2 0mm . 20 mm n i try m 150 t En min. Fron Entry End 2 x M4 2 ELF 1 Conduit M16 PG9 entry Part 33001 33002
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Untitled
Abstract: No abstract text available
Text: lew profile t 2l COMFATIBLE LOGIC DELAY LINE LOW POWER SCHOTTKY • T2|_ in p u t and o u tp u t • D elay stable and precise • 14-pin D IP package (.2 5 0 high) • A vailable in delays fro m 10 to 500ns • O u tp u t isolated and w ith 2 0 T2|_ The LPSLD L is offered in 43 delays fro m 10 to 500ns. Delay
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14-pin
500ns
500ns.
1200ppm/
70power
C/021980
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SD 1765
Abstract: 54132-4068
Text: 10 CRB INSERTION DEPTH OF FRO SECT. J-J SCALE 5: 6.55) (WHRN ACTUATOR IS OPENED) . (WHEN ACTUATOR IS LOCKED) 0.6 3.95 in B 21.5 20.5 20.3 19.3 25.65 23.15 22.15 20.65 19.65 18.65 18.15 17.65 17.15 16.65
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54132-38E
B055ED
EN-02JA
SD 1765
54132-4068
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Untitled
Abstract: No abstract text available
Text: DRAWN TO B S .8 8 8 8 FOR USE WITH 4 0 m m SQUARE FANS INNER SECURING PLATE ER SECURING PLATE Note 2. Mesh to be assembled parallel to the centre- lin e of the fro nt plate. Max allowable deviation 2 DO NOT SCALE 2 REV. 2 5 .0 2 .0 4 1757 20/02/021557 DATE
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z2002
ACDR2271
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Untitled
Abstract: No abstract text available
Text: Metallized Polypropylene Capacitor Capacitors Plastic F ilm Wrap, Epoxy End F ill Type MP12 In 1973. E lectronic Concept*. In c received e substantial research developm ent co n tra ct fro m j large chem ical com pany to *n A nd vestigate and develop nonprec«sion power capacitors using poly
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Untitled
Abstract: No abstract text available
Text: 10 5.7 F P CitAEKT (INSERTION DEPTH OF FRO 0.9 C±fflfe£fiK> (LENGTH TO BOTTOM CONTACT POINT) ^ S T IR -S T T ODD CKt TERMINAL CTW feSfig) (LENGTH TO UPPER CONTACT POINT) SECT. E-E C±ffiSE*fl») (LENGTH TO BOTTOM CONTACT POINT) fflifffiW—p T T EVEN C K t TERMINAL
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SD-51335-007_
EN-02JAI021)
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Untitled
Abstract: No abstract text available
Text: 10 2.9 W - S A IL TERM IN AL\ (FPCffAaS) (INSERTION DEPTH OF FRO) ( .7) csmm C ± E) CONTACT POINT (UPPER SIDE) SECT.J-J (5.7) A w s w s i- s - ffB in iw tA S ) (WHEN ACTUATOR IS OPEND) (733uI-9-flDuODfctt (WHEN ACTUATOR IS LOCKED) CKT.NO MARK j _ II_
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733uI-9-flDuODfcttÂ
25\WW
SD-527Z5-050
EN-02JA
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Untitled
Abstract: No abstract text available
Text: 10 2.9 W -S A IL TER M INA L\ (FPCffAaS) (INSERTION DEPTH OF FRO) ( .7) csmm C ±E ) CONTACT POINT (UPPER SIDE) SECT.J-J (5.7) A w s w s i- s - ff B in iw t A S ) (WHEN ACTUATOR IS OPEND) (733uI-9-flDuODfctt (WHEN ACTUATOR IS LOCKED) CKT.NO MARK j _ II_
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733uI-9-flDuODfcttÂ
25\WW
SD-52745-051
EN-02JA
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Untitled
Abstract: No abstract text available
Text: CHIPS SVF SERIES S VF SERIES NEC's SVF series ca p acito rs fea tu re a b u ilt-in fu se to m in im ize c irc u it dam age fro m over curre nt. These fuse-protected capacitors are suitable for noise absorption applications such as those required for computers, terminals and measuring instruments.
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b457525
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IDC15B
Abstract: 1AC15 IAC15A IDC15 IDC15D OAC15 OAC15A ODC15
Text: CRYDOM CO SSE ]> B 25*42537 0000703 b04 BCRV 7 = V /- ? ? p5 ] ü Solid state I/O s w itch in g m odules deliver an electrically clean, p h o to isolated, noise-free " o u tp u t" interface fro m logic level control systems to external loads such as m otors, valves,
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Untitled
Abstract: No abstract text available
Text: 10 2.55 _ _ (F P c s A js a ) *" (INSERTION DEPTH OF FRO (+-)L+fflIN(TEI (DIM. OR T A IL SOLDERING AREA) (DIM. TO CONTACTS) Ui VffiR- TERMINAL(ODD) SECT. GfeSfizM) (LENGTH TO CONTACT POINT) IS i T iS ' - S a i L ACTUATOR s s s a i CRT TE R M IN A L(EVE N )
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SD-500797-006
EN-02JA
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Untitled
Abstract: No abstract text available
Text: lôwprofile ECL COMFATIBLE LOGIC DELAY MODULE ECL input and outputs Delays stable and precise 16-pin DIP package .250 high Available in delays from 6 to 1000ns 20% taps-each isolated and w ith 70 ECL DC. fan-out capacity Fast rise tim e on all outputs The ECLDM is offered in 28 delays fro m
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16-pin
1000ns
1000ns
300ppm/Â
C/021
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USD635
Abstract: USD640 USD645 USD650 USQ600 Schottky Diode 40V 6A
Text: POWER SCHOTTKY RECTIFIERS USD635 USD640 USD645 USD650 12A Pk, up to 50V FEATURES DESCRIPTION • V e ry Low F orw ard V oltage T h e U S D 6 0 0 s e rie s o f S c fro ttk y p o w e r • Reverse Transient Capability • Economical Convenient Plastic Package
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USD635
USD640
USD645
USD650
USD635
USQ600
USD650
Schottky Diode 40V 6A
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TLP594G TENTATIVE TOSHIBA PHOTOCOUPLER T I P R Q PHOTO RELAY J f i MODEMS PBXes TFI FrO M M lIN ir A T I DNS The TOSHIBA TLP594G consists of a gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a DIP DIP6 , which is suitable for equipment for high tech
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TLP594G
TLP594G
UL1577,
E67349
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FRO 021
Abstract: 52435-3072
Text: 10 jì I B NOTES •f iO T W A : MATERIAL i\^vy-7 FPCjfAgg ACTUATOR (LENGTH TO CONTACT POINT) U L 9 4 V - 0 46NYL0N X-9 ; (8 J*t) TERMINAL 4 6 ^ - fn y , HOUSING (INSERTION DEPTH OF FRO) PPS, U L 9 4 V - 0 U V M ( t =0= 2) TERMINAL PHOS-BRO 1. OV TIN-BISMUTH
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46NYL0N
SD-52435-020
EN-02JA
FRO 021
52435-3072
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IN4106
Abstract: TELEDYNE TELEDYNE CRYSTALONICS CAG10 CAG30
Text: FET ANALOG GATES These circuits can be used anywhere a switch is needed fo r currents up to 100 m A and voltages up to ± 10V. The lower the Ron, the higher the peak current handling a b ility . A ll except the CAG6 operate d ire c tly fro m D T L or T T L logic w ith o u t special biasing.
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CAG30
140kHz
CAG10
200pf
in4106
IN4106
TELEDYNE
TELEDYNE CRYSTALONICS
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CAG30
Abstract: CAM601A
Text: FET ANALOG GATES These circuits can be used anywhere a switch is needed fo r currents up to 100 m A and voltages up to ± 10V. The lower the Ron, the higher the peak current handling a b ility . A ll except the CAG6 operate d ire c tly fro m D T L or T T L logic w ith o u t special biasing.
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CAG30
CAM601A
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ECLDM-6
Abstract: ECLDM-10 Delay Modules 93403 ECLDM-20
Text: lowprofile ECL COMPATIBLE LOGIC DELAY MODULE # ECL in p u t and o u tp u ts O Delays stable and precise # 16-p in D IP package .2 50 high # Available in delays fro m 6 to 1000ns # 20% taps-each isolated and w ith 70 ECL DC. fa n -o u t capacity # Fast rise tim e on all o u tp u ts
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16-pin
1000ns
C/021580R
ECLDM-6
ECLDM-10
Delay Modules
93403
ECLDM-20
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SFE 10.7 MX
Abstract: i2 200-5 5243-5
Text: 10 jìIB NOTES •f iO T W R : MATERIAL i\^vy-7 F P C jfA g g PPS, ACTUATOR (LENGTH TO CONTACT POINT) U L 9 4 V - 0 46NYL0N X -9 ; (8 J*t) TERMINAL 4 6 ^ - fn y , HOUSING (INSERTION DEPTH OF FRO) U L 9 4 V - 0 U V M ( t =0= 2) TERMINAL PHOS-BRO 1. OV TIN-BISMUTH
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46NYL0N
UL94V-
07-f-7DX-HUJtÂ
SD-52435-020
EN-02JA
SFE 10.7 MX
i2 200-5
5243-5
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Untitled
Abstract: No abstract text available
Text: r All rights strictly reserved . R eproduction o r issu e to third p a rtie s in any form w hotever is not perm itted without written auth o rity fro m the proprietor. Prop erty of B E R G ELECTRO NICS BERG Tous dro its stricte m e n t re s e rve s. Prop riété d e c B E R G
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Untitled
Abstract: No abstract text available
Text: 10 3.75 J S S S T - A tU L C FP C }? >o K 3) (INSERTION DEPTH OF FRO) ^ g tS A - S o U L TE R M IN A L(O D D ) 5? l - — A C TU A T O R X .9 ) ( 1.2) *8- — «*(DIM. TO CONTACTS) 0.9 (LENGTH TO CONTACT POINT) S E C T .X -X (SCALE SSB A 773L3.x-?zm nLizvm
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SD-54393-024_
EN-02JA
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INA101 equivalent
Abstract: ku 201
Text: B U R R -B R O W N « INA101 | b M ILIT A R Y & DIE V E R S IO N S A V A IL A B L E FEATURES APPLICATIONS • . • • • • • • A M P LIFIC A TIO N O F SIG N ALS FRO M SOURCES SUCH AS : Strain Gages Tharmocouplas RTDs • R EM O T E TRAN SD U C ER S
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INA101
INA101
T0-100,
INA101 equivalent
ku 201
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8C547
Abstract: MRF433
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The R F Line 12.5 W PEP - 3 0 MHz SILICON RF POWER TRANSISTORS RF POWER TRANSISTOR . . . designed p rim a rily fo r a p p lic a tio n as c o m p le m e n ta ry s y m m e try NPN SILICON a m p lifie rs in line ar a m p lifie rs fro m 2.0 t o 3 0 M H z.
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1N4001
VK200
1000oF
8C547
MRF433
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Untitled
Abstract: No abstract text available
Text: KM718V895 256Kx18 Synchronous SRAM Document Title 256Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0 .0 Initial d ra ft F e bru ary. 02. 1998 P re lim in a ry 0.1 C h a n g e DC c h a ra c te ris tic s V dd c o n d itio n fro m V d d = 3 .3 V + 1 0 % /-5 % C h a n g e
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KM718V895
256Kx18
256Kx18-Bit
100-TQFP-1420A
15ELECTRONICS
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