2N5564
Abstract: A008 2N5565 2N5566
Text: 2N5564/5565/5566 Siliconix Matched NĆChannel JFET Pairs Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 - VGS2j Max (mV) 2N5564 -0.5 to -3 -40 7.5 -3 5 2N5565 -0.5 to -3 -40 7.5 -3 10 2N5566 -0.5 to -3 -40 7.5 -3 20
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2N5564/5565/5566
2N5564
2N5565
2N5566
P-37406--Rev.
2N5564
A008
2N5565
2N5566
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LM331
Abstract: LM331 f to v converter LM131 1Hz-100kHz LM231 LM131A LM331AH aeks LM331A H06C
Text: — 400 — LM131/A, LM231/A, LM331/A T + D Î , A Î S Œ * A Î ) 'B f E I C j : t « t 5 V -.F 3 ? -c, 7 ) M i r - ;u j g ¡ 6 * f c |i , 1H z Â>ü 1 0 0 k H z <7)*EH"CSâÆT è ?». tti tilt * — -7'S- 3 l / 7 ? I i i è S : i t t e ' ) , 3 T T L n.fäVU&Wj&tzl t 40V i f i O
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LM131/A,
LM231/A,
LM331/A
100kHz
50ppm/r
10kHz
LM131AK,
LM131H,
LM231AH,
LU231H,
LM331
LM331 f to v converter
LM131
1Hz-100kHz
LM231
LM131A
LM331AH
aeks
LM331A
H06C
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ci LM331
Abstract: lm331 LM331AH LM231AH H06C IT18S N06E 1Hz-100kHz 1Hz-11kHz LM2907
Text: — 400 — L M 1 3 1 /A, L M 2 3 1 /A, L M 3 3 1 /A T + D Î, A Î S Œ * A Î ) 'B f E I C j : t « t 5 V -.F 3 ? -c, 7 ) M i r - ;u j g ¡ 6 * f c |i , 1H z Â>ü 1 0 0 k H z <7)*EH"CSâÆT è ?». tti tilt * — -7'S- 3 l / 7 ? I i i è S : i t t e ' ) , 3 T T L n.fäVU&Wj&tzl t 40V i f i O
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OCR Scan
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LM131/A,
LM231/A,
LM331/A
100kHz
50ppm/r
10kHz
LM131AK,
LM131H,
LM231AH,
LU231H,
ci LM331
lm331
LM331AH
LM231AH
H06C
IT18S
N06E
1Hz-100kHz
1Hz-11kHz
LM2907
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Weighing scale circuit
Abstract: 8-414
Text: 8400 Series 1 MHz Voltage to Frequency Converters S.E. Models 8410, 8412, 8413 Diff. Models 8414, 8417 BLOCK DIAGRAM OFFSET 22 M I IN 10 K v REF INTEGRATOR R A1 SCHMITT + v S TRIGGER A2 Iav One-Shot F/ F 2K 10 K R1 R2 v IN Q Dispenser Q=CV Features: • •
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Untitled
Abstract: No abstract text available
Text: BSD235N OptiMOS 2 Small-Signal-Transistor Product Summary Features 20 V V GS=4.5 V 350 mΩ V GS=2.5 V 600 V DS • Dual N-channel R DS on ,max • Enhancement mode • Super Logic level (2.5V rated) 0.95 ID A • Avalanche rated • Qualified according to AEC Q101
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BSD235N
IEC61249-2-21
PG-SOT-363
L6327:
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BFQ10
Abstract: 718s
Text: 41 PH IL IP S I N T E R N A T I O N A L E D El 711005 b DD2 b 2 1 S S Ö P H I N '' BFQ10 to 16 T-27-27 DUAL N-CHANNEL FETS Dual symmetrical n-channel silicon planar epitaxial junction field-effect transistors in a TO-71 metal envelope, w ith electrically insulated gates and a common substrate connected to the envelope; intended
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711005b
DD2b21S
BFQ10
T-27-27
BFQ10
718s
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2N5911
Abstract: No abstract text available
Text: 2N5911 SERIES N-Channel JFET Pairs C T S ificon ix incorporated The 2N5911 Series are JFET matched pairs mounted in a single TO-78 package. Ttiis two-chip design reduces parasitic performance at high-frequency while ensuring extremely tight matching. The 2N5911 features high
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2N5911
2N5912
MIL-S-19500.
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HTQFP48
Abstract: MS-026 TDA9917
Text: TDA9917 8-bit, up to 250 Msample/s Analog-to-Digital Converter ADC Rev. 01 — 9 June 2006 Objective data sheet 1. General description The TDA9917 is a differential, high-speed, 8-bit Analog-to-Digital Converter (ADC) optimized for telecommunication transmission control systems and tape drive
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TDA9917
TDA9917
HTQFP48
MS-026
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4b dmz ptc
Abstract: melcher bM 3040 H1501 H1000 melcher ac-dc converter melcher LM 1000 Melcher dc-dc converter bm 1000 1206 FUSE marking UD 1301-7R MELCHER THE POWER PARTNERS Melcher LK 2660-7R
Text: DC-DC Converters <100 W 7 DC-DC Converters <100 W 7.1 Rugged Environment Output [W] 10 20 40 60 80 100 7.2 3 Output [V DC] 5 12 15 24 36 48 Input [V DC] 10 30 70 140 220 380 Product Family Case Page M M02 7-2 S S02 7 - 26 Input [V DC] 10 30 70 140 220 380
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U430
Abstract: matched pair JFET U431
Text: U430/431 Matched N-Channel JFET Pairs Product Summary V BR GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 – VGS2j Typ (mV) Part Number VGS(off) (V) U430 –1 to –4 –25 10 –15 25 U431 –2 to –6 –25 10 –15 25 Features Benefits Applications D D D D
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U430/431
P-37405--Rev.
04-Jul-94
U430
matched pair JFET
U431
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PK243-01A
Abstract: PK245-01A CMD2109P PK268-02A CMD2120P PK266-02A CMD2112P PK244-01A PK264-02A CSD2120-T
Text: Stepping Motors RoHS-Compliant 2-Phase Stepping Motor and Driver Package CMK Series bAdditional Informationb Technical reference ➜ Page F-1 The CMK Series is a motor and driver package consisting of a 2-phase stepping motor and 24 VDC input micro step driver, allowing for a reduction in the
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CMK243AP
CMK243BP
CMK244AP
CMK244BP
CMK245AP
CMK245BP
CMK256AP
CMK256BP
CMK258AP
CMK258BP
PK243-01A
PK245-01A
CMD2109P
PK268-02A
CMD2120P
PK266-02A
CMD2112P
PK244-01A
PK264-02A
CSD2120-T
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A561 transistor
Abstract: transistor a561 2N5911 2N5912 AN102 2N5912 jfet
Text: 2N5911/5912 Siliconix Matched NĆChannel JFET Pairs Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 - VGS2j Max (mV) 2N5911 -1 to -5 -25 5 -1 10 2N5912 -1 to -5 -25 5 -1 15 2N5912, For applications information see AN102, page 6.
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2N5911/5912
2N5911
2N5912
2N5912,
AN102,
P-37407--Rev.
A561 transistor
transistor a561
2N5911
2N5912
AN102
2N5912 jfet
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Untitled
Abstract: No abstract text available
Text: BSD235N OptiMOS 2 Small-Signal-Transistor Product Summary Features VDS • Dual N-channel RDS on ,max • Enhancement mode • Super Logic level (2.5V rated) 20 V VGS=4.5 V 350 mW VGS=2.5 V 600 ID 0.95 A • Avalanche rated • Qualified according to AEC Q101
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BSD235N
PG-SOT-363
IEC61249-2-21
PG-SOT-363
H6327:
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Untitled
Abstract: No abstract text available
Text: RECTIFIER DIODES, Ultra Fast Recovery, Glass Passivated Plastic Package M axim um l i ! l l | P a rt N um ber R ectified C urrent e t T, Peek In v e rse Voltage Maximum R e v e rs e Peek Forw ard M aximum Surge C urrent F wd voltage Rev C urrent R eco v ery
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OCR Scan
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DO-41
DO-15
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U430
Abstract: U431 Jfet U431
Text: U430/431 Siliconix Matched NĆChannel JFET Pairs Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) U430 -1 to -4 -25 10 -15 25 U431 -2 to -6 -25 10 -15 25 jVGS1 - VGS2j Typ (mV) Features Benefits Applications D D D D D D D
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U430/431
P-37405--Rev.
U430
U431 Jfet
U431
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BB101M
Abstract: DSA003642
Text: BB101M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-504A Z 2nd. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz) • Withstanding to ESD;
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BB101M
ADE-208-504A
200pF,
OT-143Rmod)
BB101M
DSA003642
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K686
Abstract: RG120K Hitachi DSA002730 BB401
Text: BB401M Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-715B Z 3rd. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce useing parts cost & PC board space. • Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz) • Withstanding to ESD;
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BB401M
ADE-208-715B
200pF,
OT-143
BB401M
D-85622
K686
RG120K
Hitachi DSA002730
BB401
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K2204
Abstract: marking code g1s ADE-208-715A Hitachi DSA00164
Text: BB401M Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-715A Z 2nd. Edition Dec. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz) • Withstanding to ESD;
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BB401M
ADE-208-715A
200pF,
OT-143
BB401M
K2204
marking code g1s
ADE-208-715A
Hitachi DSA00164
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2N5196
Abstract: u421s
Text: 2N5196 SERIES N-Channel JFET Pairs The 2N 5196 S e rie s of m onolithic J F E T p airs C T S iic o n ix in c o r p o ra te d is >G M AX V 9 ft M IN (m S ) (P A ) |Vg S 1"V GS2| M AX <mV) 2N 5196 -50 1 -1 5 5 2N 5197 -5 0 1 -1 5 5 2N 5198 -5 0 1 -1 5 10 2N 5199
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2N5196
u421s
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marking code g1s
Abstract: marking code g2s Hitachi DSA00164 diode g1s
Text: BB201M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-713A Z 2nd. Edition Dec. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz) • Withstanding to ESD;
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BB201M
ADE-208-713A
200pF,
OT-143
BB201M
marking code g1s
marking code g2s
Hitachi DSA00164
diode g1s
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diode g1s
Abstract: marking 4r Hitachi DSA002730
Text: BB201M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-713B Z 3rd. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce useing parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz) • Withstanding to ESD;
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BB201M
ADE-208-713B
200pF,
OT-143
BB201M
D-85622
diode g1s
marking 4r
Hitachi DSA002730
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OS1561
Abstract: OS88
Text: Products marked with the US flag icon are proudly made in the USA and are featured in this Handbook Model Number Portable Infrared Temperature HHM29B-IR OS530 Series OS88000-K-1200 OS88000 $295 J-7 0 to 1000°F -18 to 532°C $295-$1295 J-9 -22 to 4500°F
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HHM29B-IR
OS530
OS88000-K-1200
OS88000
DP1511
OS1561
OS88
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Untitled
Abstract: No abstract text available
Text: KA8513B FM IF RECEIVER INTRODUCTION The KA8S13B is designed for FM IF Detection on the pager set It includes voltage regulator, low battery detection circuit. Mixer, Oscillator. FS K comparator and limiting IF Amplifier. FEATURES • Operating Voltage Range: 1.0 ~ 4.0V
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OCR Scan
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KA8513B
KA8S13B
50MHz
1200bps
KA8513BD
20-SS0P-225
455KHZ
10MAX
30-SS0P-375
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HLG09283
Abstract: BSL205N L6327 diode MARKING d25 DIODE D25-04
Text: BSL205N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • Dual N-channel R DS on ,max • Enhancement mode • Super Logic level (2.5V rated) 20 V V GS=4.5 V 50 mΩ V GS=2.5 V 85 ID 2.5 A • Avalanche rated • Qualified according to AEC Q101
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BSL205N
L6327:
HLG09283
BSL205N
L6327
diode MARKING d25
DIODE D25-04
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