FS100 Search Results

G296

Abstract: rfid 13.56 MHz J596 8.2 13.56 M-2096
Contextual Info: _P R E M O FS1008 Features Dimensions Leadless inductor wound on ferrite body. High SRF, allow excellent operation in RFID 13.56 MHz, filters in G SM frequencies, DECT, cordless communications, wireless LANs, etc. Operating temperature:

FS100R12KT3

Contextual Info: Technische Information / technical information FS100R12KT3 IGBT-Module IGBT-modules EconoPACK 3 Modul mit schnellem Trench/Feldstop IGBT3 und High Efficiency Diode EconoPACK™3 with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter

FS100R17KE3

Contextual Info: Technische Information / technical information FS100R17KE3 IGBT-Module IGBT-modules Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values ! " # $ % % ! " 3, 3 % : ! " ? ? % " $ @ -./0 12 - &. +,

3RG7857-1BD

Abstract: 3RG7855-1RG 3RG787-1BD 7855-2BD AlMgSi0,5 ir sensors Siemens Optical Sender ALU-2509 3rg7857 3RG7855-1R
Contextual Info: SIMATIC FS100 3RG7855-XXX MO NTAGEANLEITUNG MOUNTING INSTRUCTION Bestimmung Destination Diese Anleitung beschreibt die Montage und den Aus- These instruction describes mounting and the substitution tausch von Einzelkomponenten der SIMATIC FS100 of single components of the SIMATIC FS100 safety

Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FS100R12KT4G   IGBT,Wechselrichter/IGBT,Inverter VorläufigeDaten/PreliminaryData

fs100r12ke3

Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FS100R12KE3 IGBT,Wechselrichter/IGBT,Inverter HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C VCES  1200  V Kollektor-Dauergleichstrom

Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FS100R12KS4 IGBT,逆变器/IGBT,Inverter 最大额定值/MaximumRatedValues 初步数据/PreliminaryData 集电极－发射极电压 Collector-emittervoltage Tvj = 25°C VCES  1200  V

FS100R17PE4

Abstract: EVG 12
Contextual Info: Technische Information / technical information FS100R17PE4 IGBT-Module IGBT-modules EconoPACK 4 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und PressFIT / NTC EconoPACK™4 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT /

Contextual Info: FS1009.W STANDARD SCR TO220-F FULLY ISOLATED CASE On-State Current Gate Trigger Current 10 Amp 2 mA to 15 mA Off-State Voltage 200 V ÷ 800 V K A These series of Silicon Controlled Rectifier use a high performance PNPN technology. G These parts are intended for general

FS100R12KT4

Contextual Info: Technische Information / technical information FS100R12KT4 IGBT-Module IGBT-modules EconoPACK 2 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled4 Diode EconoPACK™2 module with trench/fieldstop IGBT4 and Emitter Controlled4 Diode IGBT-Wechselrichter / IGBT-inverter

FS100R12KE3

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FS100R12KE3 IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values ! "# # ! 0+ 9 1 > # , ? > $ "# # $ $ $ 1 # ! # $ %&' *+ ,-./ %- ( 2 *+ %- ( )*+ 3- 456

Contextual Info: MITSUBISHI Neh POWER MOSFET FS100SMH-03 HIGH-SPEED SWITCHING USE FS100SMH-03 OUTLINE DRAWING Dimensions in mm 4.5 . 15.9MAX. 1.5 * <p 3.2 5.45 • 2.5V DRIVE • TDS ON (MAX) . •■30V 5.4mQ • I D .

FS100R12KE3

Contextual Info: Technische Information / technical information IGBT-Module IGBT-Modules FS100R12KE3 vorläufige Daten preliminary data Höchstzulässige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung collector emitter voltage

fs100vs-03

Contextual Info: MITSUBISHI Neh POWER MOSFET FS100VS-03 HIGH-SPEED SWITCHING USE FS100VS-03 OUTLINE DRAWING Dimensions in mm - 1 . 1- UD J 2} 0-2.54 3. t ö CM GATE DRAIN SOURCE DRAIN • 10V DRIVE [ • VDSS .30V

fs100umh-03

Contextual Info: MITSUBISHI Neh POWER MOSFET FS100UMH-03 HIGH-SPEED SWITCHING USE FS100UMH-03 OUTLINE DRAWING Dimensions in mm • 2.5V DRIVE • V d s s . • TDS ON (MAX) .

Contextual Info: MITSUBISHÌ Neh POWER MOSFET FS100KMJ-03 HIGH-SPEED SWITCHING USE FS1OOKMJ-03 s * • s / . / • 4V DRIVE ■• ■30V • VD SS . • TDS (ON (MAX) 4.7mO • I D . ■■100A • Integrated Fast Recovery Diode (TYP.) .100ns

FS100R12KE3_B3

Abstract: FS100R12KE3
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FS100R12KE3_B3 Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values ! "# # ! $ $ / $ # / 7 ! 8 # ! = # + > = $ "# # $ 8

Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FS100R07N2E4

Contextual Info: MITSUBISHI Neh POWER MOSFET FS100KMJ-03 HIGH-SPEED SWITCHING USE FS100KMJ-03 ' 4V DRIVE ' V d s s . .30V ' rDS ON (M A X ). . 4.7m £1

Contextual Info: MITSUBISHI Neh POWER MOSFET FS100KMH-03 HIGH-SPEED SWITCHING USE FS100KMH-03 OUTLINE DRAWING Dimensions in mm 10 ± 0.3 2 .8 1 0 .2 2.5V DRIVE V d s s .30V rDS ON (MAX). 5.4m i2

FS100SM-03

Contextual Info: MITSUBISHI Neh POWER MOSFET FS100SM-03 HIGH-SPEED SWITCHING USE FS100SM-03 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX f 3.2 4 T f* 4.4 1.0 5.45 5.45 0.6 4 Q w r 10V DRIVE V d s s .3 0 V

fsu1000

Contextual Info: Flashers FSU1000 / FS100 Series The FSU1000 incorporates an onboard adjustable lash rate of 10 to 100 FPM and a universal input voltage in one device. Its circuitry is encapsulated and is capable of controlling loads of up to 20A. The versatility of the FSU1000 makes it ideal

Contextual Info: MITSUBISHI Nch POWER MOSFET FS100VS-03 HIGH-SPEED SWITCHING USE OUTLINE DRAWING r Dimensions in mm 4.5 1.5MAX. 10.5MAX. 3.0 +0.3 –0.5 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 1.3 +0.3 0 –0 1.5 FS100VS-03 1 B 5 0.5 q w e wr ¡10V DRIVE ¡VDSS . 30V

fs100smh-03

Contextual Info: MITSUBISHI Nch POWER MOSFET FS100SMH-03 HIGH-SPEED SWITCHING USE FS100SMH-03 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 20.0 5.0 r 4 2 f 3.2 2 19.5MIN. 4.4 1.0 q w 5.45 G e 5.45 0.6 2.8 4 wr ¡2.5V DRIVE ¡VDSS . 30V