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Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: GaN 600V SBD < m Nihon Inter Electronics Corporation Gallium Nitride 600V SBD Vr-V Characteristics H //// -PFC Circuit Applied Reverse Voltage [V] -Reduce VF rise due to current collapse to below 20% Recovery waveform GaN vs Si Si GaN FSU05A60 SÌ-FRD/5A/600V	OCR Scan	FSU05A60 -FRD/5A/600V) 40ns/div FSA06A60 GaN-SBD/6A/600V) FSA04B60 O-220 FSA06B60	PDF

Catalog Datasheet

MFG & Type

Document Tags

PDF

Untitled

Abstract: No abstract text available
Text: GaN 600V SBD < m Nihon Inter Electronics Corporation Gallium Nitride 600V SBD Vr-V Characteristics H //// -PFC Circuit Applied Reverse Voltage [V] -Reduce VF rise due to current collapse to below 20% Recovery waveform GaN vs Si Si GaN FSU05A60 SÌ-FRD/5A/600V

OCR Scan

FSU05A60 -FRD/5A/600V) 40ns/div FSA06A60 GaN-SBD/6A/600V) FSA04B60 O-220 FSA06B60

PDF