FSU01LG
Abstract: No abstract text available
Text: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package
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FSU01LG
FSU01LG
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FSU01LG
Abstract: Eudyna Devices
Text: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package
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FSU01LG
FSU01LG
Eudyna Devices
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FSU01LG
Abstract: No abstract text available
Text: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package
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FSU01LG
FSU01LG
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fujitsu GHz gaas fet
Abstract: fujitsu gaas fet FSU01LG
Text: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package
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FSU01LG
FSU01LG
FCSI0598M200
fujitsu GHz gaas fet
fujitsu gaas fet
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FSU01LG
Abstract: No abstract text available
Text: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package
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FSU01LG
FSU01LG
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452 fet
Abstract: FSU01LG fujitsu GHz gaas fet fujitsu gaas fet
Text: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=12GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package
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FSU01LG
12GHz
FSU01LG
FCSI0598M200
452 fet
fujitsu GHz gaas fet
fujitsu gaas fet
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fujitsu gaas fet
Abstract: FSU01LG
Text: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P ^ b = 20.0dBm Typ. • High Associated Gain: G ^ b = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@ f=12G Hz • Low Bias Conditions: V d s =3V, 10mA • Cost Effective Hermetic Microstrip Package
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FSU01LG
190dB
12GHz
FSU01LG
FCSI0598M200
fujitsu gaas fet
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FLC301XP
Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
Text: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips
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FMC141401-02
Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
Text: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking
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FSX52WF
Abstract: GaAs HEMTs X band FSX017LG FHX05LG fhx06lg FSU01LG
Text: LOW NOISE HEMTs Electrical Characteristics Ta = 25°C NF TYP. (dB) Gas TYP. (dB) f (GHz) VDS (V) •os (mA) Package Type Frequency Band FHC40LG* 0.30 15.5 4 2 10 LG/LP C FHX13LG* 0.45 12.5 12 2 10 LG/LP FHX14LG* 0.60 12.5 12 2 10 LG/LP FHX04LG* 0.75 10.5
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FHC40LG*
FHX13LG*
FHX14LG*
FHX04LG*
FHX05LG*
FHX06LG*
FHX35LG*
FHR02FH
FSX52WF
GaAs HEMTs X band
FSX017LG
FHX05LG
fhx06lg
FSU01LG
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