FT 1000MHZ Search Results

FT 1000MHZ Result Highlights (5)

Part	Manufacturer	Description
Z9169-A	Coilcraft Inc	RF Transformer, 3MHz Min, 1000MHz Max
A9900-A	Coilcraft Inc	RF Transformer, 0.525MHz Min, 1000MHz Max
S3LP108LC	Coilcraft Inc	Low Pass Filter, 1000MHz, ROHS COMPLIANT, EIA STD PACKAGE SIZE 1812, 3 PIN
S3LP108LB	Coilcraft Inc	Low Pass Filter, 1000MHz, ROHS COMPLIANT, EIA STD PACKAGE SIZE 1812, 3 PIN
WBC4-1WLC	Coilcraft Inc	RF Transformer, 0.5MHz Min, 1000MHz Max, 1:2, ROHS COMPLIANT

FT 1000MHZ Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
TB214 Abstract: bn-61-2402 BN-61-202 ft37-61 LQ801 bn612402 FT-37-61 bn61-202 P123 FB43101 Text: 2 1 +28V C3 10n R1 3.9k C8 10u D1 B B P1 POT L1 22AWG, 9x through FT-37-61 R2 3.9k C1 100n C4 10n T1 22AWG, 9x through FT-37-61 R4 100 T2a RF in L2 COAX C5 100n T3 M1 RF out COAX COAX C2 100n COAX R3 180 COAX COAX C6 100n COAX COAX M2 C7 10n T2b A A R5 100	Original	PDF	22AWG, FT-37-61 FB-43-101 BN-61-2402 TB214, LQ801, 20MHz-1000MHz, TB214 bn-61-2402 BN-61-202 ft37-61 LQ801 bn612402 FT-37-61 bn61-202 P123 FB43101
lS21el2 Abstract: KSC2753 Text: KSC2753 KSC2753 Low Noise Amplifier for VHF/UHF • High Current Gain Bandwidth Product : fT=5GHz • NF=1.5dB, lS21el2 = 16dB at f=500MHz • NF=1.7dB, lS21el2 = 10.5dB at f=1000MHz TO-92 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor	Original	PDF	KSC2753 lS21el2 500MHz 1000MHz lS21el2 KSC2753
KSC2753 Abstract: No abstract text available Text: KSC2753 KSC2753 Low Noise Amplifier for Vhf/uhf • High Current Gain Bandwidth Product : fT=5GHz • NF=1.5dB, lS21el2 = 16dB at f=500MHz • NF=1.7dB, lS21el2 = 10.5dB at f=1000MHz TO-92 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor	Original	PDF	KSC2753 lS21el2 500MHz 1000MHz KSC2753
Untitled Abstract: No abstract text available Text: KSC2753 NPN EPITAXIAL SILICON TRANSISTOR LOW NOISE AMPLIFIER FOR VHF/UHF TO-92 High fT=5GHz 2 NF=1.5dB, S21e = 16dB f=500MHz 2 NF=1.7dB, S21e = 10.5dB (f=1000MHz) ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage	Original	PDF	KSC2753 500MHz) 1000MHz)
transistor ft 12 Abstract: RF NPN POWER TRANSISTOR 3 GHZ TRANSISTOR pc 135 UHF transistor GHz RF POWER TRANSISTOR NPN 2SC4247 high power npn UHF transistor Low Noise uhf transistor NPN RF Transistor RF TRANSISTOR Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4247 DESCRIPTION •High Current-Gain Bandwidth Product fT= 4 GHz TYP. @VCE = 10 V, IC = 10 mA ·Low Noise APPLICATIONS ·Designed for TV tuner , UHF oscillator applications.	Original	PDF	2SC4247 1000MHz 30MHz transistor ft 12 RF NPN POWER TRANSISTOR 3 GHZ TRANSISTOR pc 135 UHF transistor GHz RF POWER TRANSISTOR NPN 2SC4247 high power npn UHF transistor Low Noise uhf transistor NPN RF Transistor RF TRANSISTOR
KSC1730 Abstract: No abstract text available Text: KSC1730 KSC1730 TV VHF, UHF Tuner Oscillator • High Current Gain Bandwidth Product : fT=1100MHz • Output Capacitance : COB=1.5pF MAX. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted	Original	PDF	KSC1730 1100MHz KSC1730
Untitled Abstract: No abstract text available Text: MT3S16U TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S16U Unit: mm UHF Band Oscillator and Amplifier Applications • fT is high and current dependability is excellent. • The characteristic of Reverse transfer capacitance Cre is flat. :NF = 2.4dB(Typ.) (@ 2V, 5mA, 1 GHz)	Original	PDF	MT3S16U
Untitled Abstract: No abstract text available Text: KSC1730 KSC1730 TV VHF, UHF Tuner Oscillator • High Current Gain Bandwidth Product : fT=1100MHz • Output Capacitance : COB=1.5pF MAX. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted	Original	PDF	KSC1730 1100MHz KSC1730
KSC1730 Abstract: No abstract text available Text: KSC1730 KSC1730 TV VHF, UHF Tuner Oscillator • High Current Gain Bandwidth Product : fT=1100MHz • Output Capacitance : COB=1.5pF MAX. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted	Original	PDF	KSC1730 1100MHz KSC1730
MT3S16T Abstract: No abstract text available Text: MT3S16T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S16T Unit: mm ○ UHF Band Oscillator and Amplifier Applications • fT is high and current dependability is excellent. • The characteristic of Reverse transfer capacitance Cre is flat. :NF = 2.4dB(Typ.) (@ 2V, 5mA, 1 GHz)	Original	PDF	MT3S16T MT3S16T
MT3S16U Abstract: No abstract text available Text: MT3S16U TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S16U Unit: mm ○ UHF Band Oscillator and Amplifier Applications • fT is high and current dependability is excellent. • The characteristic of Reverse transfer capacitance Cre is flat. :NF = 2.4dB(Typ.) (@ 2V, 5mA, 1 GHz)	Original	PDF	MT3S16U MT3S16U
Untitled Abstract: No abstract text available Text: MT3S16U TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S16U Unit: mm ○ UHF Band Oscillator and Amplifier Applications • fT is high and current dependability is excellent. • The characteristic of Reverse transfer capacitance Cre is flat. : NF = 2.4dB (typ.) (@ 2V, 5mA, 1 GHz)	Original	PDF	MT3S16U
2SC3934 Abstract: No abstract text available Text: Transistor 2SC3934 Silicon NPN epitaxial planer type For high-frequency wide-band low-noise amplification Unit: mm 2.1±0.1 • Features 0.425 0.3–0 0.65 1.3±0.1 +0.1 1.25±0.1 1 0.65 ● High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and	Original	PDF	2SC3934 150nductor 2SC3934
transistor S12 Abstract: 2SC3934 Text: Transistor 2SC3934 Silicon NPN epitaxial planer type For high-frequency wide-band low-noise amplification Unit: mm 2.1±0.1 • Features 0.425 0.3–0 0.65 1.3±0.1 +0.1 1.25±0.1 1 0.65 ● High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and	Original	PDF	2SC3934 150voltage 1000MHz 800MHz 500MHz transistor S12 2SC3934

RDA012M4 Abstract: No abstract text available Text: PRELIMINARY SPECIFICATION RDA012M4 12-Bit, 1.3 Gsample/s MUX DAC Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ 12-Bit D/A converter with 1.3 Gsample/s conversion rate 80GHz fT GaAs HBT process Differential Analog Output Power Supplies: -5.2V ± 0.3V, 3.3 ± 0.3V	Original	PDF	RDA012M4 12-Bit, 12-Bit 80GHz 10-bit RDA012M4
Untitled Abstract: No abstract text available Text: Switches GaAs 500 Surface M ountJ Spdt/S p4T WITH TTL Drivers DC to 5 GHz GSWA FREQ. A ft ft GHz ••ft. f1 O L ft E C t T f 1 INSERTION LOSS, dB Id B COMPRESSION, dBm YSWA YSW \|geeRF/lF GSWA-4-30DR DC-3 FRDSKJiMCY BAND FRiQ yiN O YftA N !* M W IC Y ftA N D	OCR Scan	PDF	GSWA-4-30DR YSW-2-50DR YSWA-2-50DR
Untitled Abstract: No abstract text available Text: TOSHIBA TENTATIVE HN9C01 FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N Q r m • ■ u rn ■ FT ■ ■ V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6	OCR Scan	PDF	HN9C01 2SC5096 2SC5086 500MHz 1000MHz
Untitled Abstract: No abstract text available Text: TOSHIBA TEN TA TIV E HN9C21 FT TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N Q f 71 FT • ■ u rn ■ ■ ■ V H F -U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and ultra super mini	OCR Scan	PDF	HN9C21 2SC5464 2SC5261 2000MHz 500MHz 1000MHz 1000MHz
Untitled Abstract: No abstract text available Text: KSC2753 NPN EPITAXIAL SILICON TRANSISTOR LOW NOISE AMPLIFIER FOR VHF/UHF High fT = 5GHz NF = 1.5dB, \|S218\|: = 16dB <f = 500MHz NF = 1.7dB, \|S21e\|' = 10.5dB 1= 1000MHz) ABSOLUTE MAXIMUM RATINGS Characteristics Collector Base Voltage Collector Emitter Voltage	OCR Scan	PDF	KSC2753 500MHz) 1000MHz) 1000MHz Cjtj4142 002476b
AN3920K Abstract: uv8l S10-i2 Text: AN3920K AN3920K V TR F M * - t ^ 5H BRF7> 7’ R F A m p lifier C irc u it fo r F M Audio of V T R s • ffi w AN 3920K i, VTRcOFM ^ - x" -i * HI 50R FT > v t L t ¿ O f ? t i Y '.'7 ' i ; I t . i M ■ # i ft • iftvEilfilg I • - t — T ' -f - f ^ : V cc = 5V	OCR Scan	PDF	AN3920K AN3920KÃ 50RFT 20-Lead 55mVp-p -100kHz 100kHz 1300MHz AN3920K uv8l S10-i2
C583 Abstract: No abstract text available Text: SILICON NPN EPITAXIAL PLANAR TRANSISTOR a O « > » & « # # # «ffl O «JSKfi* High Frequency Wide Band Amplifier Applications o High Praquenoy Low Noise Amplifier Applications X m « Unit : run fT i 4Ä< , cob t./J ' 5 '.'A Æ wM 7 ä « INDUSTRIAL APPLICATIONS	OCR Scan	PDF	200MHz 39MAX C583
2SC5261 Abstract: 2SC5464 Text: TO SH IBA TENTATIVE HN9C21 FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N9C21FT Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6 2.1 ± 0.1 MOUNTED DEVICES	OCR Scan	PDF	HN9C21 N9C21FT 2SC5261 2SC5464 2SC5464
2SC5086 Abstract: 2SC5096 Text: TO SH IBA TENTATIVE HN9C01 FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN9C01FT Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Two devices are built in to the super-thin and ultra super mini 6pins package : TU6 2.1 ± 0.1 MOUNTED DEVICES	OCR Scan	PDF	HN9C01 N9C01FT 2SC5096 2SC5086 2SC5086 2SC5096
2SC5086 Abstract: 2SC5096 Text: TO SH IBA TENTATIVE HN9C01 FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN9C01FT Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6 2.1 ± 0.1 MOUNTED DEVICES	OCR Scan	PDF	HN9C01 N9C01FT 2SC5096 2SC5086 2SC5086 2SC5096

FT 1000MHZ Search Results

FT 1000MHZ Result Highlights (5)

FT 1000MHZ Datasheets Context Search

TB214

lS21el2

KSC2753

Untitled

transistor ft 12

KSC1730

Untitled

Untitled

KSC1730

MT3S16T

MT3S16U

Untitled

2SC3934

transistor S12

RDA012M4

Untitled

Untitled

Untitled

Untitled

AN3920K

C583

2SC5261

2SC5086

2SC5086