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    JST Manufacturing CDS-SFT61-250N-CMKS-L

    APPLIC/DIE SET FOR IND STD PRESS
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    DigiKey CDS-SFT61-250N-CMKS-L Bulk 1
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    Dwyer Instruments Inc FT-612

    Correlated Flow Tube, 65Mm, 316Ss Float; Product Range:Mtf Series |Dwyer FT-612
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    Newark FT-612 Bulk 1
    • 1 $131.45
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    RS FT-612 Bulk 1
    • 1 $164.22
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    Hubbell Premise Wiring LFT6121212

    AL LADDER, TEE,6inchH,12inchW1,12inchW2,12inchR | Hubbell Wiring Device-Kellems LFT6121212
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    RS LFT6121212 Bulk 18 Weeks 1
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    Hubbell Premise Wiring LFT6121224

    AL LADDER, TEE,6inchH,12inchW1,12inchW2,24inchR | Hubbell Wiring Device-Kellems LFT6121224
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    RS LFT6121224 Bulk 18 Weeks 1
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    Hubbell Premise Wiring LFT6122424

    AL LADDER, TEE,6inchH,12inchW1,24inchW2,24inchR | Hubbell Wiring Device-Kellems LFT6122424
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    RS LFT6122424 Bulk 18 Weeks 1
    • 1 $324.36
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    FT612 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FT6120 Unknown FET Data Book Scan PDF
    FT6120D Unknown FET Data Book Scan PDF
    FT6121 Unknown FET Data Book Scan PDF
    FT6121D Unknown FET Data Book Scan PDF
    FT6122 Unknown FET Data Book Scan PDF
    FT6122D Unknown FET Data Book Scan PDF

    FT612 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FT61256 High Speed 32Kx8 Static CMOS Ram FEATURES High Speed Equal Access and Cycle Times – 12/15/20/25/35 ns (Commercial) – 15/20/25/35/45 ns (Industrial) – 20/25/35/45/55/70 ns (Military) Low Power Single 5V±10% Power Supply Easy Memory Expansion Using CE and OE Inputs


    Original     		PDF 32Kx8 28-Pin 32-Pin FT61256

    Untitled

    Abstract: No abstract text available
    Text: FT61256 L HIGH SPEED 32K x 8 STATIC CMOS RAM FEATURES Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Fast tOE Automatic Power Down Packages —28-Pin 300 mil DIP, SOJ, TSOP —28-Pin 300 mil Ceramic DIP —28-Pin 600 mil Ceramic DIP —28-Pin CERPACK


    Original     		PDF FT61256 --28-Pin --32-Pin 144-bit

    Untitled

    Abstract: No abstract text available
    Text: FT61256 L HIGH SPEED 32K x 8 STATIC CMOS RAM FEATURES Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Fast tOE Automatic Power Down Packages —28-Pin 300 mil DIP, SOJ, TSOP —28-Pin 300 mil Ceramic DIP —28-Pin 600 mil Ceramic DIP —28-Pin CERPACK


    Original     		PDF FT61256 --28-Pin --32-Pin 144-bit

    FT6122D

    Abstract: ft6122 fast fet MHz
    Text: January 1990 Edition 1.1 PRODUCT PROFILE FT6122, FT6122D Power MOS FET Arrays Silicon N-channel Enhancement Mode Power MOS FET Arrays ABSOLUTE M A X IM U M R A TIN G S Rating Ta = 25°C Symbol Condition Value U nit Drain Source Voltage V qss 120 V Gate Source Voltage


    OCR Scan     		PDF FT6122, FT6122D FT6122D ft6122 fast fet MHz

    FT6120D

    Abstract: FT6120
    Text: January 1990 Edition 1.1 F u jf r s u PRODUCT PROFILE'. FT6120, FT6120D Power MOS FET Arrays Silicon N-channel Enhancem ent M ode Pow er M O S F E T ABSOLUTE M AXIM UM RATINGS Rating Ta = 25°C S ym b o l C ondition U nit Value D rain Source Voltage V o ss


    OCR Scan     		PDF FT6120, FT6120D FT6120D FT6120

    ft6121d

    Abstract: FT6121 5MSD
    Text: January 1990 Edition 1.1 FUJITSU FT6121, FT6121D Power MOS FE T Arrays Silicon N-channel Enhancem ent M ode Pow er M O S F E T A B S O L U T E M A X IM U M R A T IN G S Rating Ta = 25°C S ym b o l C ond ition Value U nit Drain Source Voltage V qss 120 V


    OCR Scan     		PDF FT6121, FT6121D ft6121d FT6121 5MSD

    FT6122D

    Abstract: FT811 FT6120 FT6122 FT6120D FT6112D FT6112
    Text: Section 4 =ield Effect Transistor Arrays — A t a Glance Maximum Frequency Pag* D e vic e C m * ns V d s s (V ) Id (A) 4 -7 FT6110 FT8110D H M -65 120 120 ±2 ±2 4-11 FT6111 FT6111D R M -65 120 120 ±3 ±3 4-15 FT6112 FT6112D R M -6S 120 120 ±4.5 ±4.5


    OCR Scan     		PDF FT6110 FT8110D FT6111 FT6111D FT6112 FT6112D FT6120 FT6120D FT6121 FT6121D FT6122D FT811 FT6122

    FT6122D

    Abstract: ft6120d FT6122 FT6112D FT6120 FT6111 ft6121d 2sk 100a FT6121 VDD-100V
    Text: - 142 - * f S s tt £ ffi & ffi S A £ tè , 1 % h' V E# * ft * (A) (V) ï r~ * * P d /P ch (W) Ig s s (max) (A) Vg s (V) 1 K (min) (max) Vd s (A) (A) (V) 14 (Ta=25*C) (min) (max) Vd s (V) (V) (V) (min) (S) W Id (A) Vd s (V) Id (A) Motor-D MOS N E 120 DSS


    OCR Scan     		PDF FT6111 FT6111D FT6112 FT6112D FT6120 FT6840 130nstyp FT6860 195nstyp FT6861 FT6122D ft6120d FT6122 FT6112D FT6120 FT6111 ft6121d 2sk 100a FT6121 VDD-100V

    2T908A

    Abstract: 2T602 2T907A KT604 1HT251 1T813 2t903 KT920A PO6 115.05 KT117
    Text: nojiyriPOBOflHHKOBblE nPHBOPbl: TpaH3HCTOpbI CnpaBOHHHK rioa oGmea peaaKUHen H. H. TOPIOHOBA EB MOCKBA 3HEPrOATOMH3AAT 1983 BEK 32.852 n 53 y ^ K . 621.282.3 035 P e n e H 3 e H T b i : E. 14. KpbiJioB, B. B. I1aB;ioB AB T o p b i : B. Jl. ApoHOB, A. B. E bkikob, A. A. 3aiineB,


    OCR Scan     		PDF T-0574D. 30Eiaa Coi03nojiH 2T908A 2T602 2T907A KT604 1HT251 1T813 2t903 KT920A PO6 115.05 KT117

    FT6122D

    Abstract: FT6120D rIP 31 TRANSISTOR FT6121D FT6122 FT6120 6122D FT6110D fet transistor ft FT6112D
    Text: P ow er Transistor P roducts F ie ld E ffe ct Transistor Arrays INTRODUCTION POWER MOS FE T A R R A Y SERIES D escription This series is S ilicon Enhancement-Mode Power MOS FE T Arrays. Each array consists o f 4 MOS FETs. The array is packaged in a small plastic 12-pin single in-line package w ith o r w ith o u t an isolated heatsink.


    OCR Scan     		PDF 12-pin FT6122D FT6120D rIP 31 TRANSISTOR FT6121D FT6122 FT6120 6122D FT6110D fet transistor ft FT6112D