1-800-SAMTEC-9
Abstract: No abstract text available
Text: F-203-1 FTL–25–T–12 FLEX TEST LINKS FTL, TTL, HTL SERIES SPECIFICATIONS For complete specifications see www.samtec.com?FTL, www.samtec.com?TTL or www.samtec.com?HTL, Terminal: FTSH, TMM or TSM Series Socket: SFMC, SMM or SSM Series Cable: 1 oz. rolled annealed copper
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F-203-1
1-800-SAMTEC-9
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MD2200
Abstract: Diskonchip M-Systems MD diskonchip qnx TRUEFFS M-Systems 2MB flash disk diskonchip HARD DISK power supply diagram M-Systems diskonchip 2000 AP-DOC-10
Text: DiskOnChip 2000 MD-2200 Data Sheet Features • Single chip plug-and-play FTL FlashDisk • Operates with FLite FAT FTL/Lite in O/S-less environments • 2 - 12MB capacity (24-72MB in 2H97) • EDC/ECC for high data reliability • Full boot capability
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MD-2200
24-72MB
32-pin
July-97
Windows95,
perf00
DiskOnChip2000-EVB
DiskOnChip2000-PIK
DiskOnChip2000-GANG
MD2200
Diskonchip
M-Systems MD
diskonchip qnx
TRUEFFS
M-Systems
2MB flash disk diskonchip
HARD DISK power supply diagram
M-Systems diskonchip 2000
AP-DOC-10
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ftl specification
Abstract: AP-619 flash ftl intel FTL Logger Exchanging Data with FTL Systems intel DOC Intel AP-619
Text: E AP-619 APPLICATION NOTE FTL Logger Exchanging Data with FTL Systems KIRK BLUM TECHNICAL MARKETING ENGINEER PETER LAM SOFTWARE ENGINEER August 1995 Order Number: 292174-001 Information in this document is provided solely to enable use of Intel products. Intel assumes no liability whatsoever, including
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AP-619
ftl specification
AP-619
flash ftl intel
FTL Logger Exchanging Data with FTL Systems
intel DOC
Intel AP-619
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FLASH TRANSLATION LAYER FTL
Abstract: marking FAT NAND FLASH TRANSLATION LAYER FTL Wear Leveling in Single Level Cell NAND Flash Memory AN1820 an1823 Flash Translation Layer RAM 2112 256 word virtual small block NAND128R3A
Text: AN1820 APPLICATION NOTE How to Use the FTL and HAL Sotfware Modules to Manage Data in Single Level Cell NAND Flash Memories This Application Note gives an overview of the architecture of the Flash Translation Layer FTL and Hardware Adaptation Layer (HAL) software modules, which allow operating systems to read and write to NAND
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AN1820
FLASH TRANSLATION LAYER FTL
marking FAT
NAND FLASH TRANSLATION LAYER FTL
Wear Leveling in Single Level Cell NAND Flash Memory
AN1820
an1823
Flash Translation Layer
RAM 2112 256 word
virtual small block
NAND128R3A
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FTL Logger Exchanging Data with FTL Systems
Abstract: AP-619 flash ftl intel virtual small block ftl specification
Text: E AP-619 APPLICATION NOTE FTL Logger Exchanging Data with FTL Systems August 1995 Order Number: 292174-001 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of
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AP-619
32-bit
FTL Logger Exchanging Data with FTL Systems
AP-619
flash ftl intel
virtual small block
ftl specification
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Untitled
Abstract: No abstract text available
Text: Customer Information Sheet -DIM 'F'- -DIM 'A'- -DIM I IF IN DOUBT - ASK | g | NOT TO SCALE No. OF CONTACTS P A R T No. 'B'- •DIM 'C '±0. 20- ftl ftl ftl ftl ftl ftl ftl [pIP[p[p[j| IPIP SINGLE C ENT R A L L Y O N 09 T O 25 W A Y S | DIM 'A' DIM ' B '
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H40-600XX46
M40-6000946
M40-600XX46
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC59S6408/04FT/FTL-80,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 2,097,152-WORDX4-BANKx8-BIT SYNCHRONOUS DYNAMIC RAM 4,194,304-WORDx4-BANKx4-BIT SYNCHRONOUS DYNAMIC RAM DESCRIPTION The TC59S6408FT/FTL and TC59S6404FT/FTL are CMOS synchronous dynamic random access
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TC59S6408/04FT/FTL-80
152-WORDX4-BANKx8-BIT
304-WORDx4-BANKx4-BIT
TC59S6408FT/FTL
TC59S6404FT/FTL
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FTR 02
Abstract: TB133H 1f0f
Text: Digital Transistors FTR • FTL • ATR • ATV • SPT Composite transistors with built-in resistors. In addition to FTR and FTL and ATR and ATV and SPT package variations, internal resistor variations are available for specific applications to meet wide needs.
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100mA
DTA123E
DTA123EAA.
FTR 02
TB133H
1f0f
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2SD2175
Abstract: No abstract text available
Text: T ransistors FTR • FTL Low profile flat-package for limited space applications. Taped type can be used on automated line. Bulk type is also available. Package Application V ceo V FTL FTR 2SC1613A Driver Low VcE(sat) Indicator Driver High Voltage SW Darlington
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2SA937ALN
2SB821
2SC1613A
2SC2021LN
2SA785
2SA937A
2SC2021
2SC4775
2SA874
2SA881
2SD2175
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Untitled
Abstract: No abstract text available
Text: Transistors FTR • FTL Low profile flat-package for limited space applications. Taped type can be used on automated line. Bulk type is also available. Package FTR Application VCEO V FTL I * V CES ÄSiVcER Part No. 2SA937ALN 2SB821 Lew Noise 2SC1613A Drivor
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2SA937ALN
2SB821
2SC1613A
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2S6822
Abstract: 2s6822 TRANSISTOR 2sa790 2sc2673 2SC2021 2SC4040 2SA1554 2SA1561A A2SB1276 2SA937A
Text: Transistors FTR • FTL Low profile flat-package for limited space applications. Taped type can be used on automated line. Bulk type is also available. Package Application FTR 1 VcEO V FTL ^VCES * * V CER Part No. Indicator Driver High Voltage SW (Ta = 25°C)
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2SA937ALN
2SB821
2SB1276
2SC1613A
A2SC4034
2SC2021LN
2SA785
2SA1554
2SA937A
2SA1561A
2S6822
2s6822 TRANSISTOR
2sa790
2sc2673
2SC2021
2SC4040
A2SB1276
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TA143E
Abstract: DTC144 143ED ta124e TA114E TC114E DTC144EDA ftr 02
Text: Digital Transistors FTR • FTL • ATR • ATV • SPT Composite transistors with built-in resistors. In addition to FTR and FTL and ATR and ATV and SPT package variations, internal resistor variations are available for specific applications to meet a wide range of needs.
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100mA
DTA123E
DTA123EAA.
DTA114GCIA
DTA115G
DTA124G
DTA144G
DTC114GQA
DTC115GDA
DTC124GDA
TA143E
DTC144
143ED
ta124e
TA114E
TC114E
DTC144EDA
ftr 02
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IC 7555
Abstract: ftr 02 2SA785 2SA1555 2sa155 7555 ic 2sb127 2sc2673 2SD2191 2SA1554
Text: _ • j. « Transistors 70 2 0 1 1 1 Ü0 D7 1451 D I T ■ RHU FTR • FTL Low profile flat-pack for limited space applications. Taped type can be used on automated line. Bulk type is also available. Package Vceo V * V CES FTL FTR Application Low Noise -
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2SA937ALN
2SB821
W2SB1276
2SC1613A
W2SC4034
2SC2021LN
2SA785
2SA1554
2SA937A
2SA1561A
IC 7555
ftr 02
2SA1555
2sa155
7555 ic
2sb127
2sc2673
2SD2191
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TC554001
Abstract: No abstract text available
Text: TOSHIBA TC554001 FL/FTL-70V#-85V#-1OV TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288 WORDS X 8 BIT STATIC RAM DESCRIPTION The TC554001FL/FTL is a 4,194,304-bit static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates
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TC554001
FL/FTL-70V
TC554001FL/FTL
304-bit
10mA/MHz
70jis
OP32-P-525-1
TC554001FL/FTL-70V
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Li-65
Abstract: ta124e LI65 ta115 TC143Z
Text: Digital Transistors FTR • FTL • ATR • ATV • SPT Composite transistors with built-in resistors. In addition to FTR and FTL and ATR and ATV and SPT package variations, internal resistor variations are available for specific applications to m eet a wide range of needs.
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TC554001
Abstract: No abstract text available
Text: TOSHIBA TC554001 FL/FTL-70L#-85L#-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288 WORDS X 8 BIT STATIC RAM DESCRIPTION The TC554001FL/FTL is a 4,194,304-bit static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates
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TC554001
FL/FTL-70L
TC554001FL/FTL
304-bit
10mA/MHz
70jis
OP32-P-525-1
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FTL70
Abstract: No abstract text available
Text: TOSHIBA TC554001 FL/FTL-70,-85,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 524,288 WORDS DESCRIPTION X SILICON GATE CMOS 8 BIT STATIC RAM The TC554001FL/FTL is a 4,194,304-bit static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates
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TC554001
FL/FTL-70
TC554001FL/FTL
304-bit
OP32-P-525-1
32-P-400-1
FTL70
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2sd1469
Abstract: No abstract text available
Text: Transistors _ • j. « 70 2 0 1 1 1 Ü0 D7 1451 D I T ■ RHU FTR • FTL Low profile flat-pack for limited space applications. Taped type can be used on automated line. Bulk type is also available. Package Vceo V * V CES FTL FTR Application Low Noise -
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2SB1276
2SC1613A
2SC4034
2SC2021LN
2sd1469
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2SA785
Abstract: 2sc2673 2SB821 2SA937A 2SC4040 2SA1554 2SA1561A 2SA937ALN 2SC1613A 2SC2021
Text: Transistors FTR • FTL Low profile flat-package for limited space applications. Taped type can be used on automated line. Bulk type is also available. Package Application FTR I VcEO V FTL ^VcES (Ta = 25°C) Pc (m W ) ^FE hFE v CE (V) Ranking code tc (mA)
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2SA937ALN
2SB821
ir2SB1276
2SC1613A
VV2SC4034
2SC2021LN
2SA785
2SA1554
2SA937A
2SA1561A
2sc2673
2SC4040
2SA1554
2SC2021
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC59S6416FT/FTL-80,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 1,048,576-WORDSX4BANKSX 16-BITS SYNCHRONOUS DYNAMIC RAM DESCRIPTION TC59S6416FT/FTL is a CMOS synchronous dynamic random access memory organized as 1,048,576words X 4 bank X 16 bits. Fully synchronous operations are referenced to the positive edges of clock
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TC59S6416FT/FTL-80
576-WORDSX4BANKSX
16-BITS
TC59S6416FT/FTL
576words
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addressing mode in core i7
Abstract: TC59S6416FT
Text: TOSHIBA TENTATIVE TC59S6416FT/FTL-80,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 1,048,576-WORDSX4BANKSX 16-BITS SYNCHRONOUS DYNAMIC RAM DESCRIPTION TC59S6416FT/FTL is a CMOS synchronous dynamic random access memory organized as 1,048,576words X 4 bank X 16 bits. Fully synchronous operations are referenced to the positive edges of clock
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TC59S6416FT/FTL-80
576-WORDSX4BANKSX
16-BITS
TC59S6416FT/FTL
576words
addressing mode in core i7
TC59S6416FT
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TC554001
Abstract: No abstract text available
Text: TOSHIBA TC554001 FL/FTL-70V#-8 5 V #-1 OV TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 524,288 WORDS DESCRIPTION X SILICON GATE CMOS 8 BIT STATIC RAM The TC554001FL/FTL is a 4,194,304-bit static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates
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TC554001
FL/FTL-70V
TC554001FL/FTL
304-bit
10mA/MHz
70jis
OP32-P-525-1
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC554001 FL/FTL-70L,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 524,288 WORDS DESCRIPTION X SILICON GATE CMOS 8 BIT STATIC RAM The TC554001FL/FTL is a 4,194,304-bit static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates
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TC554001
FL/FTL-70L
TC554001FL/FTL
304-bit
10mA/MHz
OP32-P-525-1
TC554001FL/FTL-70L
32-P-400-1
HHO-21
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TC554001
Abstract: No abstract text available
Text: TOSHIBA TC554001 FL/FTL-70#-85#-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288 WORDS X 8 BIT STATIC RAM DESCRIPTION The TC554001FL/FTL is a 4,194,304-bit static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates
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TC554001
FL/FTL-70
TC554001FL/FTL
304-bit
10mA/MHz
OP32-P-525-1
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