Untitled
Abstract: No abstract text available
Text: Preliminary Fuji IGBT Intelligent-Power-Module "Compact Type" Preliminary Application Note 6MBP15VR*060-50 Fuji Electric Co., Ltd. Jul. 2013 Fuji Electric Co., Ltd. MT6M08855 Rev.1.2 Jul.-2013 Preliminary CONTENTS Chapter 1 Product Outline 1. Introduction .
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6MBP15VR
MT6M08855
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1MBI300SA-120
Abstract: 1MBI400JN-120-01 1MBI300JN-140 1MBI400JN-120 1MBI300SA120 1mbi400jn120 M237 1MBI200S-120 1MBI300JN120 1MBI30L-060
Text: Fuji Semiconductor Inc. Product Search Fuji Semiconductor, Inc. is dedicated to provide Quality Products with Superior Customer Service. Our extensive product line includes: Power Management ICs, Sensor ICs, and Driver ICs CMOS MOSFET and Smart MOSFET IGBT (Modules
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1MBI200F-120
1MBI200L-120
1MBI200N-120
1MBI600PX140
1MBI750LP060
1MBI75L-060
1MBI800PN180
1MBI600U-120
1MBI600LN140
1MBI600LP060
1MBI300SA-120
1MBI400JN-120-01
1MBI300JN-140
1MBI400JN-120
1MBI300SA120
1mbi400jn120
M237
1MBI200S-120
1MBI300JN120
1MBI30L-060
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transistor bc 7-40
Abstract: 6mbi100fc 6MBI100FC060 American Microsemiconductor 6MBI100FC-060
Text: 6MBI100FC-060 FUJI Electric IGBT Transistor Module Advancing the Semiconductor Industry Since 1972 Abstract The 6MBI100FC-060 is a discontinued insulated-gate bipolar transistor in a modular package by FUJI Electric, currently in “Last Time Buy” sale through American
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6MBI100FC-060Module
6MBI100FC-060
AS/EN/JISQ9100
ISO9001
transistor bc 7-40
6mbi100fc
6MBI100FC060
American Microsemiconductor
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Untitled
Abstract: No abstract text available
Text: Fuji Hitachi Power Semiconductor Co., Ltd. Section M12, Development Dept. Target specifications 6MBI75UB-120 This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any
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6MBI75UB-120
MT5F12646
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Untitled
Abstract: No abstract text available
Text: M SPECIFICATION DEVICE NAME :_ I G B T TYPE NAME : 1MBH1 5 D - Q 6 SPEC. No. DATE Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. D A TE NAME APPROVED Fuji Electric Co,Ltci DRAWN CHECKED 1/12 H04-004-07 Ratings and characteristics of Fuji IGBT
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H04-004-07
H04-004-03
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IC15AV
Abstract: No abstract text available
Text: M SPECIFICATION DEVICE NAME :_ I G B T TYPE NAME : 1MBH1 5 D - Q 6 SPEC. No. DATE Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. D A TE NAME APPROVED Fuji Electric Co,Ltci DRAWN CHECKED 1/12 H04-004-07 Ratings and characteristics of Fuji IGBT
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H04-004-07
H04-004-03
H04-004-03
IC15AV
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30d060
Abstract: 200v dc motor igbt 30D-060 diode 104 CIET V200V igbt 30A SB4-4
Text: FUJI IGBT & FWD 600 V 30 A 1MBH 30D-060 Fuji Discrete Package IGBT Outline Drawing • Features •Square RBSOA •Low Saturation Voltage •Less Total Power Dissipation •Minimized Internal Stray Inductance ■ Applications •High Power Switching •AC. Motor Controls
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30D-060
702708-Dallas,
0G04557
30d060
200v dc motor igbt
30D-060
diode 104
CIET
V200V
igbt 30A
SB4-4
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Untitled
Abstract: No abstract text available
Text: FUJI m uselfdsoe ; IGBT & FWD 1200 V 5A 1MB 05D-120 Fuji Discrete Package IGBT Outline Drawing • Features • Square RBSOA •Low Saturation Voltage • Less Total Power Dissipation •Minimized Internal Stray Inductance ■ Applications High Power Switching
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05D-120
0DD4477
702708-Dallas,
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Untitled
Abstract: No abstract text available
Text: FUJI S'iUKHnBDË IGBT & FWD 600 V 20 A 1MB 20D-060 Fuji Discrete Package IGBT Outline Drawing I Features Square RBSOA »Low Saturation Voltage >Less Total Power Dissipation • Minimized Internal Stray Inductance • I Applications • High Power Switching
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20D-060
1MB20D-060
702708-Dallas,
0DDM411
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2MBI75UA-120
Abstract: No abstract text available
Text: Fuji Hitachi Power Semiconductor Co., Ltd IGBT Development Dept. Section M12 <TENTATIVE> 2 M B I7 5 U A - 1 2 0 Target specification This material and the information herein is the property of Fuji Slecmc Co .Ltd.They shall be neither reproduced, copied
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2MBI75UA-120
MT5F12226
200V/75A
MT5F12226
2MBI75UA-120
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Untitled
Abstract: No abstract text available
Text: FUJI IGBT & FWD 600 V 5A 1MBC 05D-060 [11U1 STEDË Fuji Discrete Package IGBT Outline Drawing 4.5*u I Features >Square RBSOA >Low Saturation Voltage >Less Total Power Dissipation >Minimized Internal Stray Inductance 8.4±y I Applications >High Power Switching
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05D-060
DGG45Q3
702708-Dallas,
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15d060
Abstract: E1000S G100D 1000rr 15D-060
Text: FUJI IGBT & FWD 600 V 15 A 1MB 15D-060 Fuji Discrete Package IGBT Outline Drawing • Features >Square RBSOA Saturation Voltage <Less Total Pow er Dissipation >M inim ized Internal S tray Inductance > Low I Applications > High Pow er Switching M otor Controls
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15D-060
702708-Dallas,
15d060
E1000S
G100D
1000rr
15D-060
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R0330
Abstract: 05D-060
Text: FUJI IGBT & FWD 600 V 5A 1MBC 05D-060 @ujMSr¡ro3D i: Fuji Discrete Package IGBT Outline Drawing 4 .5 * u • Features JJhu Square RBSOA • Low Saturation Voltage • Less Total Pow er Dissipation • M inim ized Internal Stray Inductance • ■ Applications
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05D-060
702708-Dallas,
04S0M
R0330
05D-060
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Untitled
Abstract: No abstract text available
Text: Fuji Hitachi Power Semiconductor Co., Ltd IGBT Development Dept. Section M l2 <TENTA TIVE> 2 M B I1 0 0 U A -1 2 0 Target specification This material and the information herein is the property of Fuji Electnc Co .Ltd.They shall be neither reproduced, copied,
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Untitled
Abstract: No abstract text available
Text: FUJI d U M H T t B O IGBT & FWD 1200 V 3A 1MB 03D-120 e Fuji Discrete Package IGBT Outline Drawing • Features Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Minimized Internal Stray Inductance • ■ Applications High Power Switching
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03D-120
333E3
702708-Dallas,
DQD4474
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Untitled
Abstract: No abstract text available
Text: FUJI H T U K S T I S D 1 E IGBT & FWD 600 V 5A MBG 05D-060 Fuji Discrete Package IGBT Outline Drawing • Features Square R B SO A >Low Saturation Voltage •Less Total Power Dissipation *Minimized Internal Stray Inductance > ■ Applications High Power Switching
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05D-060
702708-Dallas,
00G4S7Ã
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50d060
Abstract: 50D-060 1mbh *50D060 R0820
Text: FUJI E U T Î S D IGBT & FWD 600 V 50 A 1MBH 50D-060 E Fuji Discrete Package IGBT Outline Drawing • Features Square RBSOA * Low Saturation Voltage ► Less Total Pow er Dissipation * M inim ized Internal Stray Inductance * ■ Applications High Pow er Switching
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50D-060
702708-Dallas,
00045b2
50d060
50D-060
1mbh
*50D060
R0820
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QDGM573
Abstract: 10D060 S4008
Text: FUJI IGBT & FWD 600 V 10 A 1M B G 10 D -060 @ lU M S n B O S Fuji Discrete Package IGBT Outline Drawing • Features •S q u a re RBSOA • Low Saturation Voltage • Less Total Pow er Dissipation • Minim ized Internal Stray Inductance ■ Applications
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10D-060
125-C
702708-Dallas,
2B3B71E
QD0H57M
QDGM573
10D060
S4008
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nana electronics
Abstract: nana electronics current sensors Hall Current Sensors NANA electronics Hall Current Sensors
Text: CONTENTS Fuji Electric Products Intelligent Power M o dule s. 2 IGBT, G-Series Six Packs .2
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2MBI300UD-120
Abstract: No abstract text available
Text: Fuji Hitachi Power Semiconductor Co.,Ltd IGBT Development Dept. Section M12 <TENTAT1VE> U -series 2 M B I3 0 0 U D -1 2 0 Target specification 1. Outline Drawing ( Unit : mm ) This ma lerïal and the Information herein is the property of Fuji Etectnc Co.Ltd.They shall be neither reproduced, copied,
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2MBI300UD-120
MT5F12225
2MBI300UD-120
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1MBA10-090
Abstract: No abstract text available
Text: FUJI IGBT S P E C I F I C A T I O N TYPE NAME : 1MBA10-Q90 1. SCOPE This specification covers the ratings and requirements for FUJI IGBT Type 1MBA10-090. Application : for General Switching Power Supply. 2. OUT VIEW 2-1 Shape and Dimensions »•it 11 > *£
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1MBA10-Q90
1MBA10-090.
MS5F2381
1MBA10-090
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Untitled
Abstract: No abstract text available
Text: FUJI IGBT S P E C I F I C A T I O N TYPE NAME : 1MBA10-Q90 1. SCOPE This specification covers the ratings and requirements for FUJI IGBT Type 1MBA10-090. Application : for General Switching Power Supply. 2. OUT VIEW 2-1 Shape and Dimensions » i 11 > •t * £
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1MBA10-090.
BS5F2381
MS5F2381
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Untitled
Abstract: No abstract text available
Text: FUJI IGBT & FWD 600 V 10 A 1MBG 10D-060 t n U K S T D S D E Fuji Discrete Package IGBT Outline Drawing • Features • Square RBSOA • Low Saturation Voltage • Less Total Pow er Dissipation • Minim ized Internal Stray Inductance ■ Applications • High Pow er Switching
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10D-060
I--4-44444Ã
702708-Dallas,
22367T2
DDG4574
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12v igbt 20a
Abstract: L20A
Text: FUJI S D J K o n iS D IGBT & FWD 600 V 20 A 1MB 20D-060 E Fuji Discrete Package IGBT Outline Drawing • Features Square RBSOA • Low Saturation Voltage • Less Total Pow er Dissipation • Minim ized Internal Stray Inductance • ■ Applications High Pow er Switching
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20D-060
15rrTrrTTTrr:
702708-Dallas,
12v igbt 20a
L20A
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