Fujitsu APD
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE0.1 Draft ADVANCE INFO. MEMORY CMOS 4 x 2M × 16 BIT DOUBLE DATA RATE SDRAM MB81PL121647-75/-80/-10 CMOS 4-BANK 2,097,152-WORD × 16 BIT Synchronous Dynamic Random Access Memory with Double Data Rate n DESCRIPTION The Fujitsu MB81PL121647 is a CMOS Synchronous Dynamic Random Access Memory (SDRAM) containing
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MB81PL121647-75/-80/-10
152-WORD
MB81PL121647
16-bit
F9903
Fujitsu APD
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Fujitsu Quantum Devices
Abstract: Quantum Devices rosa 5PIN
Text: 富士通カンタムデバイス FUJITSU QUANTUM DEVICES LIMITED 最新情報 LATEST NEWS 光半導体 受光素子シリーズ Optical Receiver Module series 2.5Gbit/s APDプリアンプレシーバ APDプリアンプレシーバ 2.5Gbit/s ROSA APD Preamp Receiver Modules
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FRM5W232FY
1550nm
Fujitsu Quantum Devices
Quantum Devices
rosa 5PIN
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APD 1550nm
Abstract: FRM5N142GW 1310nm APD Receiver Fujitsu Quantum Devices
Text: 富士通カンタムデバイス FUJITSU QUANTUM DEVICES LIMITED 最新情報 LATEST NEWS 光半導体 受光素子シリーズ Optical Receiver Module series 10Gbit Gbit/s 10 Gbit /s APDプリアンプレシーバ APDプリアンプレシーバ 10Gbit/s SFF APD Preamp Receiver Modules
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10Gbit/s
FRM5N142GW
10Gbit/s
1550nm
M3-5882
APD 1550nm
FRM5N142GW
1310nm APD Receiver
Fujitsu Quantum Devices
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Fujitsu APD
Abstract: InGaAs apd photodiode
Text: InGaAs-APD/Preamp Receiver FRM5W232LY FEATURES • • • • • Data Rates up to 2.7Gb/s High Sensitivity: -34 dBm typ. Differential Electrical Output Preamplifier Power Supply Voltage: +3.3V Wide operating temperature range: -40 to +85°C APPLICATIONS
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FRM5W232LY
550nm
FRM5W232LY
FCSI0103M200
Fujitsu APD
InGaAs apd photodiode
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Fujitsu APD
Abstract: InGaAs apd photodiode Nd-yag
Text: InGaAs-APD/Preamp Receiver FRM5W232HY FEATURES • • • • • Data Rates up to 2.7Gb/s High Sensitivity: -34 dBm typ. Differential Electrical Output Preamplifier Power Supply Voltage: +3.3V Wide operating temperature range: -40 to +85°C APPLICATIONS
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FRM5W232HY
550nm
FRM5W232HY
FCSI0103M200
Fujitsu APD
InGaAs apd photodiode
Nd-yag
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InGaAs apd photodiode
Abstract: Photodiode apd Fujitsu APD APD Current Monitor FRM5W231BS apd photodiode 7 ghz 10 gb APD receiver
Text: InGaAs-APD/Preamp Receiver FRM5W231BS FEATURES • 2.5Gb/s APD Receiver module in industry standard mini-DIL package • -34 dBm Sensitivity Typ. • -4 dBm Overload (Typ.) • Integral Thermistor • Integral GaAs IC Preamp • Differential Electrical Output
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FRM5W231BS
550nm
FCSI0200M200
InGaAs apd photodiode
Photodiode apd
Fujitsu APD
APD Current Monitor
FRM5W231BS
apd photodiode 7 ghz
10 gb APD receiver
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Fujitsu APD
Abstract: "InGaAs APD"
Text: InGaAs-APD/Preamp Receiver FRM5N141GW FEATURES • Small Form Factor Package GW : 9 pins coplanar • Integrated Design Optimizes Performance at Bit Rates up to 12.5Gb/s • High Sensitivity: -27dBm (typ.) • Electrical Differential Output • Wide Bandwidth: 10.5GHz (typ.)
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FRM5N141GW
-27dBm
310nm
610nm
10Gb/s
FRM5N141GW
FCSI0302M200
Fujitsu APD
"InGaAs APD"
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Fujitsu APD
Abstract: FRM5W231KT
Text: InGaAs-APD/Preamp Receiver FRM5W231KT/LT FEATURES KT • Data rate up to 2.5Gb/s • -32dBm typ. sensitivity • 30µm active area APD chip with GaAs preamplifier • Small co-axial package with single mode fiber APPLICATIONS • High bit rate long haul optical transmission systems operating
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FRM5W231KT/LT
-32dBm
FCSI0200M200
Fujitsu APD
FRM5W231KT
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Fujitsu APD
Abstract: InGaAs apd photodiode FRM5W232BS 550NM photodiode
Text: InGaAs-APD/Preamp Receiver FRM5W232BS FEATURES • 2.5Gb/s APD Receiver module in an industry standard mini-DIL package • High Sensitivity: -34 dBm typ. • High Differential Electrical Output • Power Overload: -4dBm (typ.) • Integral Thermistor and GaAs IC Preamp
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FRM5W232BS
550nm
FCSI0302M200
Fujitsu APD
InGaAs apd photodiode
FRM5W232BS
550NM photodiode
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Fujitsu APD
Abstract: FRM5N141GW
Text: InGaAs-APD/Preamp Receiver FRM5N141GW FEATURES • Small Form Factor Package GW : 9 pins coplanar • Integrated Design Optimizes Performance at Bit Rates up to 12.5Gb/s • High Sensitivity: -27dBm (typ.) • High Electrical Differential Output • Overload Power: -7dBm (min.)
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FRM5N141GW
-27dBm
310nm
610nm
10Gb/s
FCSI0302M200
Fujitsu APD
FRM5N141GW
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374C
Abstract: No abstract text available
Text: - PRELIMINARY - November 1995 Edition 2.1 FUJITSU PRODUCT PROFILE SHEET M B814405C-60/-70 CMOS 1 M X 4 BIT HYPER PAGE MODE DRAM CMOS 1,048,576 x 4 bit Hyper Page Mode Dynamic RAM The Fujitsu MB814405C is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304
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B814405C-60/-70
MB814405C
024-bits
MB814405C-60
MB814405C-70
26-LEAD
FPT-26P-M01)
F26001S-3C-3
374C
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Untitled
Abstract: No abstract text available
Text: PRELIM IN ARY- - M ay 1996 Edition 2.0 FUJITSU PRO DUCT PROFILE SHEET MB81V4265S-60/-70 CMOS 256K X 16BIT HYPER PAGE MODE DYNAMIC RAM CMOS 262,144 x 16 bit Hyper Page Mode Dynamic RAM The Fujitsu MB81V4265S is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304
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MB81V4265S-60/-70
16BIT
MB81V4265S
512x16-bits
MB81V4265S-60
MB81V4265S-70
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET ADVANCE INFO. MEMORY CMOS 4 x 2M x 8 BIT DOUBLE DATA RATE SDRAM MB81P64847A-10/-12 CMOS 4-BANK 2,097,152-WORD x 8 BIT Synchronous Dynamic Random Access Memory with Double Data Rate • DESCRIPTION The Fujitsu MB81P64847A is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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MB81P64847A-10/-12
152-WORD
MB81P64847A
MB81P64847Afeaturesafully
66-LEAD
FPT-66P-Mxx)
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MARKING CEK
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET ADVANCE INFO. MEMORY CMOS 4 x 4M x 4 BIT DOUBLE DATA RATE SDRAM MB81P64447A-10/-12 CMOS 4-BANK 4,194,304-WORD x 4 BIT Synchronous Dynamic Random Access Memory with Double Data Rate • DESCRIPTION The Fujitsu MB81P64447A is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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MB81P64447A-10/-12
304-WORD
MB81P64447A
B81P64447Afeaturesafully
MB81P6ODE
66-LEAD
FPT-66P-M01)
24-IW
MARKING CEK
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MARKING CEK
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET ADVANCE INFO. MEMORY CMOS 4 X 1M X 16 BIT DOUBLE DATA RATE SDRAM MB81P641647A-10/-12 CMOS 4-BANK 1,048,576-WORD x 16 BIT Synchronous Dynamic Random Access Memory with Double Data Rate • DESCRIPTION The Fujitsu MB81P641647A is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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MB81P641647A-10/-12
576-WORD
MB81P641647A
16-bit
F9810
MARKING CEK
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8117800A
Abstract: No abstract text available
Text: - PRELIMINARY - April 1996 Edition 2.1 FUJITSU PRODUCT PROFILE SHEET M B 8 1 1 7 8 0 0 A -60/-70 CMOS 2M X 8BIT FAST PAGE MODE DYNAMIC RAM C MO S 2,097,152 x 8BIT Fast Page M ode Dynamic RAM The Fujitsu M B8117800A is a fully decoded CMOS Dynamic RAM DRAM that contains
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B8117800A
024-bits
MB8117800A
DS05-10167M
8117800A
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Untitled
Abstract: No abstract text available
Text: - PRELIMINARY - March 1996 Edition 2.1 FUJITSU PRODUCT PROFILE SHEET M B 8 1 1 6 8 0 0 A -60/-70 CMOS 2M X 8BIT FAST PAGE MODE DYNAMIC RAM CMOS 2,097,152 x 8BIT Fast Page Mode Dy na m ic RAM The Fujitsu M B8116800A is a fully decoded CMOS Dynamic RAM DRAM that contains
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B8116800A
512-bits
MB8116800A
DS05-10166-1E
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Untitled
Abstract: No abstract text available
Text: - PRE LIM IN AR YFebruary 1996 Edition 3.0 Not Recommended fo r New Design PRO DUCT PROFILE SHEET FUJITSU M B 8 1 4 1 OOD-60/-70 CMOS 4M x 1 BIT FAST PAGE MODE DYNAMIC RAM CMOS 4,194,304 x 1 bit Fast Page Mode Dynamic RAM The Fujitsu MB814100D is a fully decoded CMOS Dynamic RAM DRAM that contains
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OOD-60/-70
MB814100D
048-bits
C26054S-1C
26-lead
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MBB1416
Abstract: MB81416-12 MBB1416-15 81416 MB81416 MB81416-10 MB81416-15 MB81416-16 MB8141612
Text: FUJITSU MICROELECTRONICS 7fl 3749762 FUJITSU MICROELECTRONICS M O S M M e m DE 3 7 4 T 7 b 5 ODDEfibS 1 | . M 8C 0 2 6 6 5 DJ-'Y¿-2.3-/y FU JITSU o r ie s B 8 1 4 1 6 - 1 0 , M B 8 1 4 1 6 - 1 2 , M B 8 1 4 1 6 - 1 5 NMOS 65,536-Bit Dynamic Random Access Memory
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374T7b5
MB81416-10,
MB81416-12,
MB81416-15
536-Bit
MB81416
18-pln
18-Laad
DIP-18P-M01
MBB1416
MB81416-12
MBB1416-15
81416
MB81416-10
MB81416-15
MB81416-16
MB8141612
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814400a
Abstract: MB814400A
Text: March 1992 Edition 1.0 DATA SHEET FUJITSU : M B 8 14400A-60/-70/-80 CMOS 1 M X 4 BIT FAST PAGE MODE DRAM CMOS 1,048,576 x 4 bit Fast Page Mode Dynamic RAM The Fujitsu M B 814400A is a fully decoded C M O S Dynamic RA M D R A M that contains 4,194,304 memory cells accessible in 4 -b it increments. T h e M B 814400A features a f a s t pag e’ mode of
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4400A-60/-70/-80
14400A
024-b
14400Ain
F26001S
MB814400A-60
MB814400A-70
MB814400A-80
814400a
MB814400A
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M3-12H
Abstract: fujitsu gaas marking code fujitsu gaas mm catalog CAPACITOR JL 1500 SJPL 4012K 1994C
Text: PACKAGE MARKING Fujitsu's optoelectronic device has the following marking attached to each package or package case. cP 1. Manufacturer's Name: F or FUJITSU 2. Part Number: See part numbering systems 3. Serial Number: Serial number consists of Date Code and Sequence Number.
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mpc 7
Abstract: MB86931
Text: MB86933H FUJITSU 930 Series 32-BIT RISC EMBEDDED PROCESSOR NOVEMBER 7, 1994 PRELIMINARY INFORMATION [ features • 20 M H z 50ns/cycle operating frequency • SPA RC V8 h ig h -p erfo rm an c e R ISC architecture • 1 K Byte, direct m apped instruction cache
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MB86933H
32-BIT
86933H
mpc 7
MB86931
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mb8116400
Abstract: 8116400 11cxa
Text: September 1993 Edition 4.1 F U J IT S U DATA SHEET M B 8 116400-60/-70/-80 CMOS 4M x 4 BIT FAST PAGE MODE DYNAMIC RAM CMOS 4,194,304 x 4 BIT Fast Page Mode Dynamic RAM The Fujitsu MB8116400 is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216
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MB8116400
024-bits
JV0040-939J4
8116400
11cxa
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60-A70
Abstract: No abstract text available
Text: - PRELIMINARY - March 1996 Edition 2.2 Fujrrsu PRODUCT PROFILE SHEET M B 8 1 1 6 1 6 0 A -60/-70 CMOS 1 M X 16BIT FAST PAGE M ODE DYNAMIC RAM CMOS 1,048,576 x 16BIT Fast Page Mode D y na m ic RAM The Fujitsu M B8116160A is a fully decoded CMOS Dynamic RAM DRAM that contains
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16BIT
B8116160A
16-bit
MB8116160A
256-bits
60-A70
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