FX20KMJ-2
Abstract: 8025A
Text: MITSUBISHI Pch POWER MOSFET RY A N I FX20KMJ-2 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX20KMJ-2 OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2
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FX20KMJ-2
100ns
FX20KMJ-2
8025A
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FX20KMJ-3
Abstract: No abstract text available
Text: MITSUBISHI Pch POWER MOSFET RY A N I FX20KMJ-3 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX20KMJ-3 OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2
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FX20KMJ-3
100ns
FX20KMJ-3
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FX20KMJ-06
Abstract: No abstract text available
Text: FX20KMJ-06 High-Speed Switching Use Pch Power MOS FET REJ03G1442-0200 Previous: MEJ02G0275-0101 Rev.2.00 Aug 07, 2006 Features • • • • • • Drive voltage : 4 V VDSS : – 60 V rDS(ON) (max) : 97 mΩ ID : – 20 A Integrated Fast Recovery Diode (TYP.) : 50 ns
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FX20KMJ-06
REJ03G1442-0200
MEJ02G0275-0101)
PRSS0003AB-A
O-220FN)
FX20KMJ-06
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FX20KMJ-03-A8
Abstract: FX20KMJ-03
Text: FX20KMJ-03 High-Speed Switching Use Pch Power MOS FET REJ03G0259-0100 Rev.1.00 Aug.20.2004 Features • • • • • Drive voltage : 4 V VDSS : – 30 V rDS ON (max) : 0.13 Ω ID : – 20 A Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns
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FX20KMJ-03
REJ03G0259-0100
O-220FN
FX20KMJ-03-A8
FX20KMJ-03
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FX20KMJ-3
Abstract: No abstract text available
Text: FX20KMJ-3 High-Speed Switching Use Pch Power MOS FET REJ03G1444-0200 Previous: MEJ02G0289-0101 Rev.2.00 Aug 07, 2006 Features • • • • • • Drive voltage : 4 V VDSS : –150 V rDS(ON) (max) : 0.29 Ω ID : –20 A Integrated Fast Recovery Diode (TYP.) : 100 ns
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FX20KMJ-3
REJ03G1444-0200
MEJ02G0289-0101)
PRSS0003AB-A
O-220FN)
FX20KMJ-3
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8025A
Abstract: FX20KMJ-06
Text: MITSUBISHI Pch POWER MOSFET RY A N I FX20KMJ-06 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX20KMJ-06 OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2
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FX20KMJ-06
8025A
FX20KMJ-06
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FX20KMJ-3
Abstract: No abstract text available
Text: FX20KMJ-3 High-Speed Switching Use Pch Power MOS FET REJ03G1444-0200 Previous: MEJ02G0289-0101 Rev.2.00 Aug 07, 2006 Features • • • • • • Drive voltage : 4 V VDSS : –150 V rDS(ON) (max) : 0.29 Ω ID : –20 A Integrated Fast Recovery Diode (TYP.) : 100 ns
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FX20KMJ-3
REJ03G1444-0200
MEJ02G0289-0101)
PRSS0003AB-A
O-220FN)
FX20KMJ-3
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FX20KMJ-03
Abstract: FX20KMJ-03-A8
Text: FX20KMJ-03 High-Speed Switching Use Pch Power MOS FET REJ03G0259-0100 Rev.1.00 Aug.20.2004 Features • • • • • Drive voltage : 4 V VDSS : – 30 V rDS ON (max) : 0.13 Ω ID : – 20 A Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns
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FX20KMJ-03
REJ03G0259-0100
O-220FN
FX20KMJ-03
FX20KMJ-03-A8
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Untitled
Abstract: No abstract text available
Text: FX20KMJ-2 High-Speed Switching Use Pch Power MOS FET REJ03G1443-0200 Previous: MEJ02G0282-0101 Rev.2.00 Aug 07, 2006 Features • • • • • • Drive voltage : 4 V VDSS : – 100 V rDS(ON) (max) : 0.26 Ω ID : – 20 A Integrated Fast Recovery Diode (TYP.) : 100 ns
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FX20KMJ-2
REJ03G1443-0200
MEJ02G0282-0101)
PRSS0003AB-A
O-220FN)
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FX20KMJ-2
Abstract: No abstract text available
Text: FX20KMJ-2 High-Speed Switching Use Pch Power MOS FET REJ03G1443-0200 Previous: MEJ02G0282-0101 Rev.2.00 Aug 07, 2006 Features • • • • • • Drive voltage : 4 V VDSS : – 100 V rDS(ON) (max) : 0.26 Ω ID : – 20 A Integrated Fast Recovery Diode (TYP.) : 100 ns
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FX20KMJ-2
REJ03G1443-0200
MEJ02G0282-0101)
PRSS0003AB-A
O-220FN)
FX20KMJ-2
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FX20KMJ-03
Abstract: No abstract text available
Text: MITSUBISHI Pch POWER MOSFET RY A N I FX20KMJ-03 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX20KMJ-03 OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2
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FX20KMJ-03
FX20KMJ-03
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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FX20KMJ-2
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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1002ds
Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2
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2SC5998"
C5139
2SC5247
2SC5907
2SD1504
2SJ361
2SK439
2SK494
2SK3349
BCR5KM-12L
1002ds
6020v4
TRANSISTOR BJ 131-6
2SC 8550
transistor 2sc1417
HITACHI 08122B
transistor h945
6030v4
2SC 8050
25aaj
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rjh3047
Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing
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REJ01G0001-0400
rjh3047
rjh3077
rjp3047
RJH3047DPK
rjp3049
rjp6065
rjp3053
RJP3042
smd code FX mosfet
RJP6055
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FX20KMJ-3
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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FX20KMJ-03
Abstract: FX20KMJ-03-A8
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Original
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PDF
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FX20KMJ-2
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Original
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Pch POWER MOSFET FX20KMJ-2 ^ e V a<a s° HIGH-SPEED SWITCHING USE FX20KMJ-2 OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 2.8 ± 0 .2 • 4V DRIVE •V dss .-1 0 0 V • rDS ON (MAX) . 0.26Í2
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FX20KMJ-2
100ns
O-220FN
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OT 306
Abstract: No abstract text available
Text: MITSUBISHI Pch POWER MOSFET FX20KMJ-06 ^ e V a<a s° HIGH-SPEED SWITCHING USE FX20KMJ-06 OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 2.8 ± 0 .2 • 4V DRIVE • V d s s .-60V • rDS ON (MAX) .97 m i2
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FX20KMJ-06
97mi2
O-220FN
7l0-32
57KH2
571Q12
OT 306
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Pch POWER MOSFET FX20KMJ-3 ^ e V a<a s° HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 10 ± 0.3 2.8 ± 0.2 • 4V DRIVE • V d s s .-150V • rDS ON (MAX) . 0.29Í2
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FX20KMJ-3
-150V
100ns
O-220FN
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Pch POWER MOSFET FX20KMJ-03 ^ e V a<a s° HIGH-SPEED SWITCHING USE FX20KMJ-03 OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 2.8 ± 0 .2 • 4V DRIVE • V d s s .-30V • rDS ON (MAX) . 0.130
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FX20KMJ-03
O-220FN
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FX50SM-2
Abstract: FX20KM-06 FX50VS06 FX6AS-06 fx6um-06 FX30KM06 marking Td FX3AS-06 FX6KM-06
Text: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Short Form Data Selector Guide Discrete MOSFET Low Voltage Trench Gate - 10.0V Driver Voltage p-channel MOSFETs Maximum Ratings, Tc = 25°C Device V qss •d VGSS Number (V)
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fx6as-03
fx6km-03
to-220fn
fx6um-03
to-220
fx6vs-03
to-220s
fx3as-06
fx3km-06
FX50SM-2
FX20KM-06
FX50VS06
FX6AS-06
fx6um-06
FX30KM06
marking Td
FX6KM-06
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FS10KM12
Abstract: FS10SM16A FS20KM-5 FS10SM18A FS7UM16A FS18SM10 CT40TMH FS7UM-16A FX6KM-06 CT60AM-20
Text: HMcnor Q lliC k Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Reference Guide Discrete IGBTs Strobe Flash Applications Product Features: □ Guaranteed Flash Life □ High Peak Current Capability □ Compact Package □ Specified Capacitor Ratings
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O-220S
CT20VS-8
CT20VSL-8
O-220C
O-220F
CT20TM-8
CT20AS-8
CT20ASL-8
CT20ASJ-8
CT20VM-8
FS10KM12
FS10SM16A
FS20KM-5
FS10SM18A
FS7UM16A
FS18SM10
CT40TMH
FS7UM-16A
FX6KM-06
CT60AM-20
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