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    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FX35V0510 1 0 .5 — 1 1.0GHz BAND 3 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F X 3 5 V 0 5 1 0 is an internally impedance matched GaAs power F E T especially designed fo r use in 10.5 ~ 11.0 G H z band amplifiers. The herm etically sealed metal-ceramic


    OCR Scan     		PDF FX35V0510

    M52777SP

    Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
    Text: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30


    OCR Scan     		PDF 2SA1115 2SA1235 2SA1235A 2SA1282 2SA1282A 2SA1283 2SA1284 2SA1285 2SA1285A 2SA1286 M52777SP M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p

    mgfx35v0510

    Abstract: FX35V0510-51 MGFX35V0005
    Text: ^M ITSUBISHI MGFX35VXXXX Packaged ELECTRONIC DEVICE GROUP DESCRIPTION • Internally matched to 50Q • High output power PldB = 3.5W (TYP) This family of devices use high performance source island via-hole GaAs die which offer excellent electrical and thermal resistance


    OCR Scan     		PDF MGFX35VXXXX MGFX35VXXXX MGFX35V9095 MGFX35V9500 MGFX35V0005 MGFX35V0510 MGFX35V1722 MGFX35V9095-01 MGFX35V9095-51 MGFX35V9500-01 FX35V0510-51