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    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> bEMTflET G 0 1 Ô G 3 2 IDO M G FX38V0510 1 0 .5 ~ ll.0 G H i; BAND 6 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FX38V 0510 is an internally impedance matched GaAs power F ET especially designed for use in 10.5 ~ 11.0


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