FZT657 Search Results

FZT657

Contextual Info: Transistors SMD Type NPN Silicon Planar Medium Power Transistor FZT657 SOT-223 Unit: mm +0.2 3.50-0.2 6.50 Features +0.1 3.00-0.1 Low saturation voltage +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 1 2 Collector 3 2

Contextual Info: SOT223 PNP SIUCON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 4- JANUARY 1996 _ _ FEATU RES * Low saturation voltage * 300V VCE0 COM PLEM ENTARY TYPE - FZT657 PARTM ARKING D ETAIL - FZT757 ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

EM 00001

Contextual Info: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 4 - JANUARY 1996_ FE A T U R E S * L o w s a tu ra tio n vo lta g e * 300V V CE0 CO M PLEM ENTARY TYPE - FZT657 PARTM ARKING DETAIL - FZT757 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage

FZT751

Abstract: FZT757 FZT705 FZT605 FZT651 FZT653 FZT655 FZT657 FZT753 FZT755
Contextual Info: SOT-223 NPN TRANSISTORS INCLUDING DARLINGTON h FE Type V CBO V C EO ^C(cont) •c m ^tot A W ^CE(sat) Min. MHz Ma x. at lc/lB Min. /Max. at Ic/V ce mA mA/Volts Volts Comple­ ment V V A FZT657 300 300 0.5 1.0 2.0 50/- 100/5 0.5 100/10 30 FZT757 FZT655 150

Contextual Info: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR td tr 250 ts tf µs µs 4 1.6 IC /IB=10 3 1.2 C IB1=IB2=IC /10 E COMPLEMENTARY TYPE - FZT657 PARTMARKING DETAIL - FZT757 VC E=10V 1.4 200 FZT757 ISSUE 4– JANUARY 1996 FEATURES * Low saturation voltage * 300V VCEO

Contextual Info: FZT657 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)300 I(C) Max. (A)500m Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)200 V(CE)sat Max. (V)500m @I(C) (A) (Test Condition)100m

Contextual Info: Transistors SMD Type Product specification FZT657 SOT-223 Unit: mm +0.2 3.50-0.2 6.50 Features +0.1 3.00-0.1 Low saturation voltage +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 1 2 Collector 3 2 +0.1 0.70-0.1 2.9 3 Emitter

fzt657

Contextual Info: SOT223 NPN SILICON PLANAR M EDIUM POWER TRANSISTOR FZT657 IS S U E 3 - F E B R U A R Y 1995 FEATURES * Low saturation voltage C O M P L E M E N T A R Y TY PE - FZT757 P A R T M A R K IN G D ETA IL - FZT657 B ABSOLUTE M A X IM U M RATINGS. PARAMETER Collector-Base Voltage

Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSU E 3 - FEBRU ARY 1995_ FEA TU RES * Low saturation voltage COM PLEM ENTARY TYPE - FZT757 PARTM ARKING DETAIL - FZT657 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage

Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3- FEBRUARY 1995_ FEAT U R ES * L o w sa tu ra tio n v o lta g e C O M P L E M E N T A R Y T Y P E - FZT757 P A R T M A R K IN G D ET A IL - FZT657 ABSOLUTE MAXIMUM RATINGS. PA R A M ET E R

FZT657

Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FZT657 ISSUE 3– FEBRUARY 1995 FEATURES * Low saturation voltage 1.8 COMPLEMENTARY TYPE - FZT757 100 1.6 C E 1.4 80 PARTMARKING DETAIL - FZT657 VCE=5V 1.2 IC /IB=10 1.0 C B 60 0.8 40 0.6 0.4 ABSOLUTE MAXIMUM RATINGS.

FZT657

Abstract: FZT757 DSA003712
Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FZT657 TYPICAL CHARACTERISTICS 1.8 - Normalised Gain % 1.2 IC /IB=10 1.0 0.8 V 0.6 0.4 0.2 0.01 0.1 1 10 h - (Volts) 1.4 E 80 40 ABSOLUTE MAXIMUM RATINGS. 20 0.1 1 I+ - Collector Current (Amps) I+ - Collector Current (Amps)

FZT757

Abstract: FZT657 DSA003716
Contextual Info: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT757 TYPICAL CHARACTERISTICS td tr ts tf µs µs 4 1.6 IC /IB=10 IB1=IB2=IC /10 200 3 V 150 100 1.2 0.01 0.1 0.6 1 ABSOLUTE MAXIMUM RATINGS. tr tf ts td tr 0.01 IC - Collector Current Amps 0.1 1 IC - Collector Current (Amps)

complementary npn-pnp

Abstract: complementary npn-pnp power transistors zdt6757 FZT657 T6757 NPN/PNP transistor sot223 FZT757 200V 100MA NPN DSA003725
Contextual Info: SM-8 COMPLEMENTARY MEDIUM POWER TRANSISTORS ZDT6757 ZDT6757 ISSUE 1 - NOVEMBER 1995 C1 B1 C1 E1 C2 B2 C2 E2 NPN TRANSISTOR ELECTRICAL CHARACTERISTICS at Tamb = 25°C . NPN PNP SM-8 (8 LEAD SOT223) PARTMARKING DETAIL – T6757 ABSOLUTE MAXIMUM RATINGS. PARAMETER

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

Contextual Info: DATE: 13th January, 2015 INFORMATIONAL PCN #: 2166 (REV 01) PCN Title: Addition of Date Code Information to Part Marking Dear Customer: This is an announcement of change(s) to products that are currently being

FZT757

Abstract: 200V 100MA NPN t6757 FZT657
Contextual Info: Obsolete. Nearest alternative is ZDT6753 SM-8 COMPLEMENTARY MEDIUM POWER TRANSISTORS ZDT6757 ZDT6757 ISSUE 1 - NOVEMBER 1995 C1 B1 C1 E1 C2 B2 C2 E2 NPN TRANSISTOR ELECTRICAL CHARACTERISTICS at Tamb = 25°C . NPN PNP SM-8 (8 LEAD SOT223) PARTMARKING DETAIL – T6757

GE1030

Abstract: FSV064 fmmt451ta ZXM61N03FTA FST866FTD ZXTN25050DFHTA BS250FTA ZXMP3F37DN8TA sot23-6
Contextual Info: PRODUCT CHANGE NOTICE DCS/PCN-1119 Rev 00 Contact Date: Implementation Date: Alert Category: Alert Type: PCN #: October 30, 2008 November 13, 2008 Integrated Circuits and Discrete Semiconductors New manufacturing location and addition of new mould compounds

NPN VCEO 500V sot23

Abstract: ZTX857 FZT657 ZTX458
Contextual Info: High Voltage Transistors NPN High Voltage Transistors 300 to 500 Volts The Zetex range of 300V to 500V transistors provide optimized high performance NPN specifications in a variety of through hole and surface mount packages. Providing very efficient high voltage operation, these devices are ideally suited to line

FMMT634TA

Abstract: FMMTA42QTA FZT689BTA GL-106 fzt1151 fmmt6517ta Dual PNP Transistor FMMT734TA FMMT723TA FR107-T-F
Contextual Info: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT560 ISSUE 1– NOVEMBER 1998 FEATURES * 500 Volt VCEO * 150mA continuous current * Ptot = 2 Watt C E C PARTMARKING DETAIL – FZT560 B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

ZTX752 equivalent

Abstract: transistor 42-10a data BC369 FXTA92 BSS98
Contextual Info: B o ok 1 Through Hole Com ponents Table of Contents Section Introduction 1 Selection Guide 2 Datasheets 3 Package Outline Dimensions 4 Tape and Reel Specifications 5 Surface Mount Alternatives 6 Alphanumeric Index 7 Book 2 Surface Mount Components - Available on Request

Contextual Info: SM-8 COMPLEMENTARY M EDIU M POWER TRANSISTORS ZDT6757 ISSUE 1 - NOVEMBER 1995 - ABSOLUTE M A X IM U M RATINGS. PARAM ETER SY M B O L NPN PNP Collector-Base Voltage VCBO 300 -300 V Collector-Emitter Voltage V CEO 300 -300 V Emitter-Base Voltage

FTZ605

Abstract: ZDT6790 fzt653 ZDT1049 ZTX415 ZTX796A fzt651 ZXGD3003E6 2DD1766 zetex transistor to92
Contextual Info: DIO 1943 BiPolar brochure Final Artwork 12/4/10 14:50 Page 2 BIPOLAR CORPORATE HEADQUARTERS AND AMERICAS SALES OFFICE TRANSISTORS 15660 N. Dallas Parkway, Suite 850, Dallas, TX 75248 USA Tel: 972-385-2810 E-mail: inquiries@diodes.com EUROPE SALES OFFICE