ic tba 500
Abstract: FZTA14 FZTA64 TBA 100
Text: SOT223 PNP SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 5– MARCH 2001 ✪ PARTMARKING DETAILS: FZTA64 COMPLIMENTARY TYPE: FZTA14 FZTA64 4 3 2 1 SOT223 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage V CBO
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OT223
FZTA64
FZTA14
OT223
100ms
ic tba 500
FZTA14
FZTA64
TBA 100
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sot223 transistor
Abstract: partmarking 5 C PARTMARKING at FMMT38C FZTA14 FZTA64 DSA003719
Text: SOT223 NPN SILICON PLANAR DARLINGTON TRANSISTOR FZTA14 ISSUE 3 JANUARY 1996 PARTMARKING DETAIL:- DEVICE TYPE IN FULL COMPLEMENTARY TYPE :- FZTA64 C E C B SOT223 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Emitter Voltage VCES 30 V Collector-Base Voltage
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OT223
FZTA14
FZTA64
OT223
100mA,
FMMT38C
20MHz
sot223 transistor
partmarking 5 C
PARTMARKING at
FZTA14
FZTA64
DSA003719
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IC LM
Abstract: FZTA14 FZTA63 FZTA64
Text: m SOT223 PNP SILICON PLANAR DARLINGTON TRANSISTORS I I ISSUE 4- MARCH 1996 i 1 4 PARTMARKING FULL DETAILS: COMPLIMENTARY DE\’lCE FZTA63 TYPES: TYPE = FZTAI 3 3 FZTA64=FZTA14 ABSOLUTE MAXIMUM PARAMETER Collector-Base Collector-Emitter Em;ter-Base * SYMBOL
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OT223
FZTA63
FZTA64
FZTA14
20MHz
300ys.
IC LM
FZTA14
FZTA63
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FZTA14
Abstract: FZTA63 FZTA64
Text: SOT223 PNP SILICON PLANAR DARLINGTON TRANSISTORS FZTA63 FZTA64 TYPICAL CHARACTERISTICS 1.5 1.5 +25° C 1.0 1.0 0.5 0.5 I+/I*=1000 10m 100m 1 1m 10m 100m 1 10 IC - Collector Current A VCE(sat) v IC 45k PARTMARKING DETAILS: FULL DEVICE TYPE COMPLIMENTARY TYPES:
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OT223
FZTA63
FZTA64
FZTA13
FZTA14
100ms
FZTA14
FZTA63
FZTA64
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Untitled
Abstract: No abstract text available
Text: SOT223 NPN SILICON PLANAR DARLINGTON TRANSISTOR FZTA14 ISSUE 3 JANUARY 1996 PARTMARKING DETAIL:- DEVICE TYPE IN FULL COMPLEMENTARY TYPE :- FZTA64 C E C B SOT223 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Emitter Voltage VCES Collector-Base Voltage
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OT223
FZTA14
FZTA64
OT223
100mA,
FMMT38C
20MHz
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FMMTA14
Abstract: FMMTA64 FZTA64
Text: SOT23 PNP SILICON PLANAR DARLINGTON TRANSISTOR FMMTA64 ✪ ISSUE 3 – MARCH 2001 PARTMARKING DETAIL – FMMTA64 - Z2V E C COMPLEMENTARY TYPES – FMMTA64 - FMMTA14 B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage
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FMMTA64
FMMTA64
FMMTA14
-100mA,
-50mA,
20MHz
-10mA,
FMMTA14
FZTA64
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Untitled
Abstract: No abstract text available
Text: SOT223 NPN SILICON PLANAR DARLINGTON TRANSISTOR ISSUE 3 - JANUARY 1996_ P A R T M A R K I N G D E T A IL :- D E V IC E T Y P E IN F U L L C O M P L E M E N T A R Y TYPE FZTA64 ABSOLUTE M A X IM U M RATINGS. PARAMETER SYM BO L V A LU E U N IT
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OT223
FZTA64
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Untitled
Abstract: No abstract text available
Text: SOT223 PNP SILICON PLANAR DARLINGTON TRANSISTORS FZTA63 FZTA64 ISSUE 4 - MARCH 1996 O PARTMARKING DETAILS: FULL DEVICE TYPE COMPLIMENTARY TYPES: FZTA63 = FZTA13 FZTA64 = FZTA14 ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER Collector-Base Voltage C ollector-E m itter Voltage
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OT223
FZTA63
FZTA64
FZTA13
FZTA14
-100mA,
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pnp silicon
Abstract: FZTA13
Text: SOT223 PNP SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 4- MARCH 1996 O P A R T M A R K IN G D E T A IL S : F U L L D E V IC E T Y P E C O M P L IM E N T A R Y T Y P E S : FZTA63 = FZTA13 4 — FZTA64 = FZTA14 1 SO T 223 ABSOLUTE M A X IM U M RATINGS PARAM ETER
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OT223
FZTA63
FZTA13
FZTA64
FZTA14
300ns.
FZTA63
pnp silicon
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E3030
Abstract: No abstract text available
Text: SOT223 NPN SILICON PLANAR DARLINGTON TRANSISTOR FZTA14 ISSUE 3 -J A N U A R Y 1996_ P A R T M A R K IN G DETAIL:- D E V IC E T Y P E IN F U L L C O M P LEM EN T A R Y TYPE FZTA64 ABSOLUTE M A X IM U M RATINGS. PARAMETER SYM BO L C olle ctor-E m itter V o lta ge
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OT223
FZTA64
FZTA14
300ns.
E3030
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Untitled
Abstract: No abstract text available
Text: SOT223 NPN SILICON PLANAR DARLINGTON TRANSISTOR FZTA14 ISSUE 3 - JA N U A R Y 1996_ PARTMARKING DETAIL:- DEVICE TYPE IN FULL COM PLEM ENTARY T Y P E :- FZTA64 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-E m itter Voltage VALUE
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OT223
FZTA14
FZTA64
FMMT38C
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FZT600
Abstract: FZT603
Text: SOT223 DARLINGTON TRANSISTORS Pinout : 1-Base, 2&4-Collector, 3-Emitter v CE|sat Max VcBO V v CEO V ^C cont) A <o h :E Type 160 140 2.0 2.0 Min/M ax Typ MHz t,t Com plem ent 1000/10 150- - 150 FZT705 150 FZT704 at lc / VCE m A / Volts Volts at l c / Iß mA
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OT223
FZT600
1K/2K/100K
FZT605
5K/2K/100K
FZT604
FZT603
2K/100K
500/FZTA14
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102k1k
Abstract: FZT603 FZT600
Text: Section 5: Bipolar Transistors D arlington T ra n s isto rs Available in SOT223, S0T8, SOT23, E-Line and T092 packages the Darlingtons listed in the fo llo w in g tables provide optim um solutions fo r surface m ount or through
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OT223,
102k1k
FZT603
FZT600
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bss170
Abstract: BAT54S/SM NPN Transistor BC817-40 221 sot23 FMMD2837 FMMD2835 FMMD2836 FMMD2838 SM NPN Transistor BC817-40 F2T694B BAR99
Text: SuperSOT Series ^ A:1 HIGH CURRENT SuperSOT TRANSISTORS {PD=625mW) Pinout: 1-Collector, 2-Emitter, 3-Basa V cbo VCEO le P,o, Type V V mA mW 15 15 3000 625 VcE sat) hFE fl a tlc /V c E m A /V Max V at Iq/I b mA Typ MHz 200/- 3000 / 2 0.10 10 00 /1 0 120 1 5 0 /-
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625mW)
FMMT617
FMMT717
FMMT625
/FMMT624
FMMT619
FMMT618
FZT1053
30/FZT1051
bss170
BAT54S/SM NPN Transistor BC817-40
221 sot23
FMMD2837
FMMD2835
FMMD2836
FMMD2838
SM NPN Transistor BC817-40
F2T694B
BAR99
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