G 402 RP Search Results

GoldStar

Abstract: GM71C4256-85 RAS 0510 connection diagram 104 csk 14 tv goldstar GM71C4256 GM71C4256-12 RAS 0510
Contextual Info: GOLDSTAR TECHNOLO GY INC/ 51E D • 402Ô7S7 aOOSSTb 4 ■ PRELIMINARY SPECIFICATION GoldStar GM71C4256 kSSJ GOLD STAR CO., LTD. 262,144 WORDS x 4 BIT CMOS DYNAMIC RAM Description Pin Configuration The G M 71C 4256 is the new generation dynamic RAM organized 2 6 2 ,1 4 4 X 4 Bit. The G M 71C4256 utilizes

SFH Siemens

Contextual Info: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Chip position 2.7 SFH 400 SFH 401 SFH 402 Cathode (SFH 480 Anode (SFH 216, SFH 231, SFH 400) Radiant Sensitive area 00.45 i -L 5.3 5.0 7.4 GE006314 O Oí o o (O 6.6 Approx. weight 0.5 g Anode = SFH 481

DS90C401

Abstract: DS90C402 DS90C402M M08A MVL100
Contextual Info: & Semiconductor DS90C402 Dual Low Voltage Differential Signaling LVDS Receiver G eneral D escription F eatu res The D S90C 402 is a dual receiver device optim ized for high data rate and low pow er applications. This device along with the DS90C401 provides a pair chip solution for a dual high

Contextual Info: GOLDSTAR TECHNOLOGY IN C / 47E ]> • 402Ô7S7 GoldStar 1 «GST 0003433 TWé-23-/5 G M 7 1 C 4 1 0 0 A /A L 4,194,304 WORDSxl BIT CMOS DYNAMIC RAM Description Features The GM71C4100A/AL is the new generation dy­ namic RAM organized 4,194,304 x 1 Bit. GM71C4100A/AL has realized higher density, higher per­

EIA-364-52

Abstract: SSJ12R04
Contextual Info: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T B Y TYCO E L E C T R O N IC S P U B L IC A T IO N R IG H T S RESERVED. C O R P O R A T IO N . .50 10.20 + 0 0.00 - .402 + .020 4.30 [.1 69] -.0 0 0 D 2.50 [.098] 1.50 [.059]

Contextual Info: TECHNICAL DATA SHEET RPC-N 50 Ω 05K121-272S3 STRAIGHT JACK All dimensions are in mm; tolerances according to ISO 2768 m-H Interface According to IEC 60169-16 ; CECC 22 210 ; MIL-STD 348A/402 Documents Assembly instruction 03 A Material and plating RF_35/11.05/3.1

Contextual Info: TECHNICAL DATA SHEET RPC-N 50 Ω 05S121-272S3 STRAIGHT PLUG All dimensions are in mm; tolerances according to ISO 2768 m-H Interface According to IEC 60169-16 ; CECC 22 210 ; MIL-STD 348A/402 Documents Assembly instruction 02 A3 Material and plating RF_35/11.05/3.1

Contextual Info: TECHNICAL DATA SHEET RPC-N 50 Ω 05K521-272S3 BULKHEAD JACK All dimensions are in mm; tolerances according to ISO 2768 m-H Interface According to IEC 60169-16 ; CECC 22 210 ; MIL-STD 348A/402 Documents Assembly instruction Panel piercing 03 A B 13 Material and plating

Contextual Info: S G S-THOnSON D7C D | 7 ^ 5 3 7 0014L37 3 I c u s /m o s HCC/HCF 4014B HCC/HCF 4021B INTEGRATED CIRCUITS 7929225 S G S ' 7 ' tK r O ? ’ ù $ , S E M IC O N D U C T O R CO RP P RELIM IN A RY DATA 8-STAGE STATIC SHIFT REGISTERS: 4014B-SYNCHRONOUS PARALLEL OR SER IA L INPUT/SERIAL OUTPUT

PEC 814

Contextual Info: M O DEL R N X M e ta l O x id e R esisto rs S p e c ia l P u rp o s e , H ig h V o lta g e FEATURES • For oil bath or open air operation • Low TC: ± 200PPM/°C standard. ± 100PPM/°C, ± 50PPM/°C available. • Tolerance: ± 1% standard to 1 Gigohm, ± 5% above 1 Gigohm.

ISL9504

Abstract: j4310 BD9828 ISL9504B NVIDIA G84m RN5VD30A-F SLG2AP101 Q7080 88E8058 PP3V42G3H
Contextual Info: 8 6 7 04/02/2007 Contents D Page TABLE_TABLEOFCONTENTS_HEAD TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM

ISL9504

Abstract: macbook pro 13 m9 apple PP3V42G3H 51c7 macbook 5d4 diode "board view" macbook diode 62b3 28b sot23-3
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEMATIC,MACBOOK PRO 17" ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ?

R61517

Abstract: AS0B32 MXM spec pp601 40 AS0B326 126S0086 FST 172 U7200 Apple K23 MLB J9402
Contextual Info: 8 6 7 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 5 2 3 4 1 CK APPD SANTANA - M51 MLB REV ZONE ECN 17 ENG APPD DESCRIPTION OF CHANGE 440406 ENGINEERING RELEASED

SMC1602

Abstract: SN7002DW c3231 Q2576 r2561 C3239 C3303 C2651 C5060 U4900
Contextual Info: 8 6 7 C B A PAGE PDF 1 2 3 4 5 6 7 8 9 10 11 13* 14 16 17 18 21* 22 23 24 25* 26 27 28 29 30 31 32 33 34 35 36 37 38 40 44 45 46 48 49 50 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 2 3

L6703

Abstract: ISL9504 ntc 10d-7 55D8 55B3 sot23-5 32 pin Mini-DVI to VGA connector PP3V42G3H 31d6 D7950 J5550
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. K36 MLB SCHEMATIC REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ?

IRLM2402

Abstract: c4977 cf325 NEC c5292 VD357 C5292 nec NEC "C4305" cf406 C4934 C5248
Contextual Info: 8 6 7 2 3 4 5 CK APPD FINO M23 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 19 397409 ENGINEERING RELEASED

D9778

Abstract: D9763 wze sot-23 WZE SOT23 104 mylar capacitor R2624 HP C6602 U6100 p51 apple imac MLB
Contextual Info: 8 6 7 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 2 3 4 5 1 CK APPD IMAC 5,2 - REV D REV ZONE ECN D ENG APPD DESCRIPTION OF CHANGE 466215 PRODUCTION RELEASED

L7803

Abstract: RN5VD30A-F L7206 1.2 74LC125 M50 apple p66 apple HP C6602 PP12V Apple K23 MLB APPLE LCD INVERTER
Contextual Info: 8 6 7 PDF CSA CONTENTS SYNC MASTER DATE PDF CSA CONTENTS TABLE_TABLEOFCONTENTS_HEAD 2 2 System Block Diagram MASTER MASTER 3 Power Block Diagram MASTER MASTER 38 39 4 Table Items MASTER 40 MASTER 5 FUNC TEST 1 OF 2 MASTER 41 MASTER 6 Power Conn / Alias MASTER

APPLE A6 CHIP

Abstract: cf325 W07 sot 23 C-492-5 SMD M05 sot23 C4977 cf406 p66 apple c5297 I342
Contextual Info: 8 6 7 PDF CSA CONTENTS IMG5 17" REV E 11/01/05 SYNC MASTER DATE PDF CSA CONTENTS TABLE_TABLEOFCONTENTS_HEAD 2 System Block Diagram FINO-DD 06/20/2005 TABLE_TABLEOFCONTENTS_ITEM 3 4 Power Block Diagram FINO-PC 06/20/2005 5 Table Items FINO-M23 08/26/2005 6

L7803

Abstract: 74LC125 HP C6602 AR2313 p66 apple U6301 SiL1362ACLU ZH510 b9718 L7206 1.2
Contextual Info: 8 6 7 PDF CSA CONTENTS SYNC MASTER DATE PDF CSA CONTENTS TABLE_TABLEOFCONTENTS_HEAD 2 2 System Block Diagram MASTER MASTER 3 Power Block Diagram MASTER MASTER 38 39 4 Table Items MASTER 40 MASTER 5 FUNC TEST 1 OF 2 MASTER 41 MASTER 6 Power Conn / Alias MASTER

R9810

Abstract: HT 1200-4 smd r9824 HT 1200-4 c6011 L9707 L5800 c9611 C3150 ic c2335
Contextual Info: 8 6 7 2 3 4 5 CK APPD GILA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN DATE ? ? ? EVT1 B 1 2 3 4 6 7 8 9 10 11 13* 14 16 17 18 21* 22

31d8 diode

Abstract: r2561 741G32 zener 12a2 27b4 R3381 zener 12B2 2N7002DW MAX4172 TH 2267 charger circuit diagram
Contextual Info: 8 6 7 2 3 4 5 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN C B TITLE PAGE AND CONTENTS SYSTEM BLOCK DIAGRAM POWER BLOCK DIAGRAM PCB NOTES AND HOLES

Siemens SFH 506

Abstract: SFH Siemens
Contextual Info: SIEM ENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter r C ath o d e Anode C hip p osition 2.7 SFH 400 SFH 401 SFH 402 (SFH 4 8 0 ) R a d ia n t Sensitive (S F H 2 1 6 , SFH 2 3 1 , area SFH 4 0 0 ) i Anode = SFH 481 C athode = SFH 401 (package) 0 0.45

r9824

Abstract: R9825 HT 1200-4 smd L9707 HT 1200-4 r9810 L9708 U5400 r2561 C3523
Contextual Info: 8 6 7 2 3 4 5 CK APPD GILA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN DATE ? ? ? EVT1 D C B PAGE PDF 1 2 3 4 6 7 8 9 10 11 13* 14 16