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    Untitled

    Abstract: No abstract text available
    Text: IR F R 2 6 0 5 IR F U 2 6 Q5 htemational ^Rectifier HEXFET Power MOSFET • • • • • • • Ultra Low On-Resistance ESD Protected Surface Mount IRFR2605 Straight Lead (IRFU2605) 150°C Operating Temperature Repetitive Avalanche Rated Fast Switching


    OCR Scan     		PDF IRFR2605) IRFU2605)

    1480 nm laser diode high power

    Abstract: No abstract text available
    Text: O K I electronic components OL403N-100 1.48 jam High-Power Laser Diode GENERAL DESCRIPTION The OL403N-100 is a 1.48 |xm, InGaAsP/InP high-power laser diode which can be a light source for fiber-optic communication systems and optical instruments. FEATURES


    OCR Scan     		PDF OL403N-100 OL403N-100 b724240 00E2435 2424D G02243b L724240 DD22437 1480 nm laser diode high power