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    Abstract: No abstract text available
    Text: SSP4N60AS A d va n ce d Power MOSFET FEATURES B V DS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA Max. @ V os = 600V


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    PDF SSP4N60AS G04D37b 003b32fl 3b32t O-220 00M1N 7Tb4142 DD3b33D