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    dd07b

    Abstract: MIPS R3000A 79R3010A
    Text: INTEGRATED 3ÛE DEVICE D • MÖES771 G0G7b33 3 WÊ IDT _ -r- M i z • c>s IDT79R3010A IDT79R3010AE RISC FLOATING POINT ACCELERATOR FPA NOTICE Integrated Device Technology, Inc. SEE ORDER OF • Hardware Support of Single- and Double-Precision


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    PDF ES771 G0G7b33 IDT79R3010A IDT79R3010AE IDT79R3000A IDT79R3001 0G07b55 IDT79R3010A/AE 79R3010A dd07b MIPS R3000A

    transistor bc 209 npn

    Abstract: transistor bc 207 npn transistor BC 209 TRANSISTOR BC 208 bc 301 transistor transistor darlington 800v transistor bc 207 TRANSISTOR BC 206 IC-5V-54B2 KSD1693
    Text: ¡ SAMSUNG S EMIC ONDUCT OR INC KSD1692 14E | 7^4142 00071,31 4 | NPN SILICON DARLINGTON TRANSISTOR T HIGH DC CURRENT GÀIN LOW COLLECTOR SATURATION VOLTAGE BUILT-IN A DAMPER DIODE AT E-C - 3 3 I , ? TO-126 HIGH POWER DISSIPATION : PT = 1.3W T.=25°C ABSOLUTE MAXIMUM RATINGS <Ta=25°C )


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    PDF KSD1692 O-126 PWC10 KSD5000 IC-5V--54B2 L-50OiM 0007b3? transistor bc 209 npn transistor bc 207 npn transistor BC 209 TRANSISTOR BC 208 bc 301 transistor transistor darlington 800v transistor bc 207 TRANSISTOR BC 206 IC-5V-54B2 KSD1693