Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    G0S272G Search Results

    G0S272G Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM8596-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P-idB = 36.5 dBm at 8.5 GHz to 9.6 GHz • High gain - G1dB = 7.5 dB at 8.5 GHz to 9.6 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		TIM8596-4 MW51180196 G0S272G PDF