Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistors FEATURE ƽPb-Free package is available. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT5551WT1G G1 3000/Tape&Reel LMBT5551WT3G G1 10000/Tape&Reel LMBT5551WT1G 3 1 2 MAXIMUM RATINGS Rating
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LMBT5551WT1G
3000/Tape
LMBT5551WT3G
10000/Tape
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR LMBT5551DW1T1G FEATURE 6 ƽPb-Free package is available. 5 4 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT5551DW1T1G G1 3000/Tape&Reel LMBT5551DW1T3G G1 10000/Tape&Reel
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LMBT5551DW1T1G
3000/Tape
LMBT5551DW1T3G
10000/Tape
OT-363/SC-88
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high speed Zener Diode
Abstract: "Dual PNP Transistor" PAD1 Spice a7 P-CHANNEL LS320 j177 TRANSISTOR "Dual npn Transistor" LS3250 2n5019 ultra low noise
Text: NC G2 G1 NC NC G2 G1 NC Linear Integrated Systems - Lead Pb Free / RoHS Compliant Parts List MAIN MENU Home Page Page 1 of 3 Linear Integrated Systems Lead-Free / RoHS Fact Sheet Products Support Literature Spice Models Downloads Contact Us Distributors
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marking g1
Abstract: G1 marking sot23 mark G1 SOT-23 sot-23 Marking G1 G1 SOT-23 BFS20 marking G1 02 MARKING G1 SOT23 marking G1 sot-23
Text: SEMICONDUCTOR BFS20 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking G1 No. 1 Item Marking Device Mark G1 BFS20 hFE Grade - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method
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BFS20
OT-23
marking g1
G1 marking sot23
mark G1 SOT-23
sot-23 Marking G1
G1 SOT-23
BFS20
marking G1 02
MARKING G1 SOT23
marking G1 sot-23
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mosfet 4800
Abstract: 4800 mosfet sot-363 n-channel mosfet sot-363 p-channel mosfet MOSFET P SOT-23 sot-23 P-Channel MOSFET Complementary MOSFETs 2N7002 BSS84 BSS8402DW
Text: New Product Announcement May 2003 Introducing New Complementary Pair MOSFETs in SOT-363 Package: BSS8402DW A D2 G1 SOT-363 S1 B C S2 G2 D1 G H K M J D D2 G1 L F S1 Q1 Q2 S2 G2 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80
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OT-363
BSS8402DW
OT-363
2N7002
BSS84
mosfet 4800
4800 mosfet
sot-363 n-channel mosfet
sot-363 p-channel mosfet
MOSFET P SOT-23
sot-23 P-Channel MOSFET
Complementary MOSFETs
BSS8402DW
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BFS20
Abstract: No abstract text available
Text: SOT23 NPN SILICON PLANAR VHF TRANSISTOR ISSUE 3 JANUARY 1996 BFS20 ✪ PARTMARKING DETAIL G1 E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO
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BFS20
100MHz
BFS20
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MMBT5551A
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain . 2 1 3 MARKING G1 SOT-23 *Pb-free plating product number:MMBT5551L PIN CONFIGURATION
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MMBT5551
OT-23
MMBT5551L
MMBT5551-AE3-R
MMBT5551L-AE3-R
OT-23
QW-R206-010
MMBT5551A
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marking G1 sot-23
Abstract: MMBT5401 MMBT5551 MARKING G1
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT5551 TRANSISTOR NPN SOT-23 FEATURES z Complementary to MMBT5401 z Ideal for medium power amplification and switching 1. BASE 2. EMITTER - 3. COLLECTOR MARKING: G1
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OT-23
MMBT5551
OT-23
MMBT5401
100MHz
MMBT5551
marking G1 sot-23
MMBT5401
MARKING G1
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marking G1 sot23 UTC
Abstract: No abstract text available
Text: UTC MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain 2 1 APPLICATIONS *Telephone switching circuit *Amplifier 3 MARKING SOT-23 G1 1:EMITTER 2:BASE 3:COLLECTOR
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MMBT5551
OT-23
QW-R206-010,
marking G1 sot23 UTC
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sot23 g1
Abstract: MMBT5551
Text: UTC MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain 2 1 APPLICATIONS 3 *Telephone switching circuit *Amplifier MARKING SOT-23 G1 1:EMITTER 2:BASE 3:COLLECTOR
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MMBT5551
OT-23
QW-R206-010
sot23 g1
MMBT5551
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Untitled
Abstract: No abstract text available
Text: LS5911 LS5912 LS5912C IMPROVED LOW NOISE WIDEBAND MONOLITHIC DUAL N-CHANNEL JFET FEATURES Improved Replacement for SILICONIX, FAIRCHILD, & NATIONAL: 2N5911 & 2N5912 LOW NOISE 10kHz en ~ 4nV/√Hz G1 D1 S1 gfs ≥ 4000µS HIGH TRANSCONDUCTANCE (100MHz) ABSOLUTE MAXIMUM RATINGS
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LS5911
LS5912
LS5912C
2N5911
2N5912
10kHz)
100MHz)
OT-23
25-year-old,
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TRANSISTOR SMD MARKING g1
Abstract: CMBT5551 smd transistor g1
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT5551 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5551 = G1 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration
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ISO/TS16949
OT-23
CMBT5551
C-120
TRANSISTOR SMD MARKING g1
CMBT5551
smd transistor g1
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BFS20
Abstract: No abstract text available
Text: BFS20 SMALL SIGNAL NPN TRANSISTOR • ■ ■ Type Marking BFS20 G1 SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS COMMON EMITTER IF AMPLIFIER 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS
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BFS20
OT-23
BFS20
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marking G1
Abstract: No abstract text available
Text: MMBT5551 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to MMBT5401 Ideal for medium power amplification and switching MARKING: G1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Dimensions in inches and (millimeters)
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MMBT5551
OT-23
MMBT5401
100MHz
marking G1
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Bipolar Transistors Selection Guide
Abstract: transistor G1 MSOP-3 AT-42010 AT-41511 200 mil BeO transistor
Text: Silicon Bipolar Transistors Selection Guide NFo and Ga are specified at a low noise bias point, while P1 dB, G1 dB, and |S21E|2 are specified at bias points which optimize these parameters. Low Noise Transistors Typical Specifications @ 25°C Case Temperature
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AT-30511
AT-30533
AT-31011
AT-31033
AT-32011
AT-32032
AT-32033
AT-32063
AT-41410
AT-41411
Bipolar Transistors Selection Guide
transistor G1
MSOP-3
AT-42010
AT-41511
200 mil BeO transistor
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mark G1 SOT-23
Abstract: 2N5551 g1 2N5551 KST5551
Text: KST5551 KST5551 Amplifier Transistor • Collector-Emitter Voltage: VCEO=160V • Collector Power Dissipation: PC max =350mW 3 2 1 SOT-23 Mark: G1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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KST5551
350mW
OT-23
2N5551
mark G1 SOT-23
2N5551 g1
KST5551
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secos gmbh
Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3
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SC-59
SGSR809-A
SGSR809-B
SGSR809-C
SGSR809-D
SGSR809-E
secos gmbh
SMBJ11CA
SM4005A
SMBJ130CA
SMBJ14CA
SMBJ16CA
SMBJ160CA
BZV55C6V2
BZV55C12
SMBJ13CA
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT5551 TRANSISTOR NPN SOT–23 FEATURES z Complementary to MMBT5401 z Ideal for Medium Power Amplification and Switching 1. BASE MARKING: G1 2. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-23
MMBT5551
MMBT5401
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TRANSISTOR SMD MARKING g1
Abstract: SMD TRANSISTOR G1 g1 smd transistor smd transistor t A1 sot-23 npn ts 4141 TRANSISTOR smd cmbt5551 MARKING SMD TRANSISTOR P smd transistor 304 smd transistor marking g1 TRANSISTOR SMD g1
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5551 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5551 = G1 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
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OT-23
CMBT5551
C-120
TRANSISTOR SMD MARKING g1
SMD TRANSISTOR G1
g1 smd transistor
smd transistor t A1 sot-23 npn
ts 4141 TRANSISTOR smd
cmbt5551
MARKING SMD TRANSISTOR P
smd transistor 304
smd transistor marking g1
TRANSISTOR SMD g1
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sm 4109
Abstract: .g1 sot23 30533 41410 AT-30533 AT-31011 AT-31033 AT-32011 AT-41511 AT-32063
Text: Silicon Bipolar Transistors Selection Guide NFo and Ga are specified at a low noise bias point, while P1 dB, G1 dB, and |S21E|2 are specified at bias points which optimize these parameters. Low Noise Transistors Typical Specifications @ 25°C Case Temperature
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AT-30511
OT-143
AT-30533
OT-23
AT-31011
AT-31033
AT-64020
AT-64023
AT-31625
sm 4109
.g1 sot23
30533
41410
AT-30533
AT-31011
AT-31033
AT-32011
AT-41511
AT-32063
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FMMT5551
Abstract: No abstract text available
Text: FM M T5550 FMMT5551 SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTO RS PARTMARKING DETAILS: FM M T 5550 - 1F FMMT5551 - G1 ABSOLUTE M AXIMUM RATINGS PARAM ETER SYM BO L Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current
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OCR Scan
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T5550
FMMT5551
FMMT5551
FMMT5550
FMMT5551j
DS226
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marking g1
Abstract: marking HA 7 sot23 transistor bfs20 BFS20
Text: rZ 7 SGS-THOMSON WiCTOOieS BFS20 SMALL SIGNAL NPN TRANSISTOR Type Marking BFS20 G1 . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . COMMON EMITTER IF AMPLIFIER SOT-23 ABSOLUTE MAXIMUM RATINGS
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BFS20
OT-23
OT-23
marking g1
marking HA 7 sot23
transistor bfs20
BFS20
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Untitled
Abstract: No abstract text available
Text: SOT23 NPN SILICON PLANAR VHF TRANSISTOR BFS20 ISSUE 3 -.JANUARY 1996_ & PARTMARKING DETAIL — G1 B SOT23 ABSOLUTE MAXIMUM RATINGS. PARA M ETER S YM B O L VALUE UNIT Collector-Base Voltage V CBO 30 V V CEO 20 V V EBO 4 V ¡CM 25 mA Collector-Em itter Voltage
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BFS20
100MHz
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Untitled
Abstract: No abstract text available
Text: SOT23 NPN SILICON PLANAR VHF TRANSISTOR ISSUE 3 -JANUARY 1996_2 _ P A R T M A R K IN G D ET A IL — G1 ABSOLUTE MAXIM UM RATINGS. PARAMETER SYM BO L VALUE UNIT Collector-Base Voltage V CBO 30 V Collector-Emitter Voltage V CEO 20 V V EBO 4 V 25
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7QS70
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