g1g diode
Abstract: 3G1A g1ab DO-204AP
Text: G1A / B / D / G / J / K / M VISHAY Vishay Semiconductors Standard Sinterglass Diode Features • High temperature metallurgically bonded constructed rectifiers • Cavity-free glass passivated junction in DO204AP package • Hermetically sealed package • 1.0 ampere operation at Tamb = 100 °C with no
|
Original
|
PDF
|
DO204AP
DO-204AP
MIL-STD-750,
D-74025
11-Aug-04
g1g diode
3G1A
g1ab
|
Sinterglass
Abstract: DO-204AP DO204AP Package g1g diode DO204AP
Text: G1A to G1M VISHAY Vishay Semiconductors Standard Sinterglass Diode \ Features • High temperature metallurgically bonded constructed rectifiers • Cavity-free glass passivated junction in DO204AP package • Hermetically sealed package • 1.0 ampere operation at Tamb = 100 °C with no
|
Original
|
PDF
|
DO204AP
DO-204AP
MIL-STD-750,
DO-20ges
D-74025
28-Jan-03
Sinterglass
DO-204AP
DO204AP Package
g1g diode
|
g1g diode
Abstract: g1ab
Text: G1A / B / D / G / J / K / M VISHAY Vishay Semiconductors Standard Sinterglass Diode Features • High temperature metallurgically bonded constructed rectifiers • Cavity-free glass passivated junction in DO204AP package • Hermetically sealed package • 1.0 ampere operation at Tamb = 100 °C with no
|
Original
|
PDF
|
DO204AP
DO-204AP
MIL-STD-750,
18-Jul-08
g1g diode
g1ab
|
DO204AP
Abstract: DO-204AP
Text: G1A / B / D / G / J / K / M VISHAY Vishay Semiconductors Standard Sinterglass Diode Features • High temperature metallurgically bonded constructed rectifiers • Cavity-free glass passivated junction in DO204AP package • Hermetically sealed package • 1.0 ampere operation at Tamb = 100 °C with no
|
Original
|
PDF
|
DO204AP
DO-204AP
MIL-STD-750,
08-Apr-05
|
FP75R12KT4
Abstract: sph1
Text: Technische Information / technical information FP75R12KT4 IGBT-Module IGBT-modules EconoPIM 3 Modul mit Trench/Feldstopp IGBT4 und EmCon4 Diode EconoPIM™3 module with trench/fieldstop IGBT4 and EmCon4 diode IGBT-Wechselrichter / IGBT-inverter Vorläufige Daten / preliminary data
|
Original
|
PDF
|
FP75R12KT4
FP75R12KT4
sph1
|
FP100R06KE3
Abstract: No abstract text available
Text: Technische Information / technical information FP100R06KE3 IGBT-Module IGBT-modules EconoPIM 3 Modul mit schnellem Trench/Feldstopp IGBT³ und EmCon3 Diode EconoPIM™3 module with fast trench/fiedstop IGBT³ and EmCon3 diode IGBT-Wechselrichter / IGBT-inverter
|
Original
|
PDF
|
FP100R06KE3
FP100R06KE3
|
Untitled
Abstract: No abstract text available
Text: TVP3033 Data Manual Video Interface Palette Literature Number: SLAS149 April 1998 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version of relevant information
|
Original
|
PDF
|
TVP3033
SLAS149
|
G3JF
Abstract: g2jf R2N P1F transistor g3jb g2jb g2nf r6k diode O1G R3G G5D G1Db R3D R2G G2H surface mount diode g2e 187
Text: TVP3033 Data Manual Video Interface Palette Literature Number: SLAS149 April 1998 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version of relevant information
|
Original
|
PDF
|
TVP3033
SLAS149
G3JF
g2jf
R2N P1F transistor
g3jb
g2jb
g2nf
r6k diode
O1G R3G G5D G1Db R3D R2G
G2H surface mount diode
g2e 187
|
ior p108
Abstract: No abstract text available
Text: TVP3033 Data Manual Video Interface Palette Literature Number: SLAS149 April 1998 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version of relevant information
|
Original
|
PDF
|
TVP3033
SLAS149
ior p108
|
G3JF
Abstract: g2jf g2nf g3jb fs r6a CIRCUIT DIAGRAM r6k diode diode g4l ior p118 O1G R3G G5D G1Db R3D R2G g2e 187
Text: TVP3033 Data Manual Video Interface Palette Literature Number: SLAS149 April 1998 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version of relevant information
|
Original
|
PDF
|
TVP3033
SLAS149
G3JF
g2jf
g2nf
g3jb
fs r6a CIRCUIT DIAGRAM
r6k diode
diode g4l
ior p118
O1G R3G G5D G1Db R3D R2G
g2e 187
|
EQUIVALENT BYD33D
Abstract: 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 1N6644 FR207 equivalent
Text: DISCRETE SEMICONDUCTORS Cross reference guide Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Cross reference guide “Philips Type” refers to closest Philips alternative or direct equivalent if available. Always consider the application and
|
Original
|
PDF
|
PBYR3045WT
BYD73D
CTB34M
BYD73G
SB1035
PBYR1040
1N5059
SB1040
EQUIVALENT BYD33D
1n5062 equivalent
SUF5402
diode cross reference BYS21-45
BYS21-45
1N4007 general instruments
BY255 itt
da3/1000
1N6644
FR207 equivalent
|
ADS900
Abstract: OPA2631 OPA2634 OPA2634U OPA631 OPA632 OPA634 OPA635 inverse chebyshev
Text: OPA2634 OPA 263 4 For most current data sheet and other product information, visit www.burr-brown.com Dual, Wideband, Single-Supply OPERATIONAL AMPLIFIER TM FEATURES DESCRIPTION ● ● ● ● ● ● ● The OPA2634 is a dual, low power, voltage-feedback,
|
Original
|
PDF
|
OPA2634
OPA2634
140mV
140MHz)
OPA2634)
ADS900
OPA2631
OPA2634U
OPA631
OPA632
OPA634
OPA635
inverse chebyshev
|
ADS901
Abstract: OPA2631 OPA2634 OPA631 OPA631U OPA632 OPA634 OPA635
Text: OPA 631 OPA631 OPA632 For most current data sheet and other product information, visit www.burr-brown.com Low Power, Single-Supply OPERATIONAL AMPLIFIERS TM FEATURES DESCRIPTION ● HIGH BANDWIDTH: 75MHz G = +2 ● LOW SUPPLY CURRENT: 6mA The OPA631 and OPA632 are low power, high-speed,
|
Original
|
PDF
|
OPA631
OPA632
75MHz
OPA631
OPA632
130mV
OPA632)
ADS901
OPA2631
OPA2634
OPA631U
OPA634
OPA635
|
4th-order elliptic bandpass filter
Abstract: ADS901 OPA2631 OPA2631U OPA2634 OPA631 OPA632 OPA634 OPA635
Text: OPA2631 OPA 263 1 www.ti.com Dual, Low-Power, Single-Supply OPERATIONAL AMPLIFIER TM FEATURES DESCRIPTION ● ● ● ● ● ● The OPA2631 is a dual, low-power, voltage-feedback amplifier designed to operate on a single +3V or +5V supply. Operation on ±5V or +10V supplies is also
|
Original
|
PDF
|
OPA2631
OPA2631
130mV
68MHz)
4th-order elliptic bandpass filter
ADS901
OPA2631U
OPA2634
OPA631
OPA632
OPA634
OPA635
|
|
|
inverse chebyshev
Abstract: ADS900 OPA2631 OPA2634 OPA2634U OPA631 OPA632 OPA634 OPA635
Text: OPA2634 OPA 263 4 www.ti.com Dual, Wideband, Single-Supply OPERATIONAL AMPLIFIER TM FEATURES DESCRIPTION ● ● ● ● ● ● ● The OPA2634 is a dual, low-power, voltage-feedback, high-speed operational amplifier designed to operate on +3V or +5V single-supply voltage. Operation on
|
Original
|
PDF
|
OPA2634
OPA2634
140mV
140MHz)
inverse chebyshev
ADS900
OPA2631
OPA2634U
OPA631
OPA632
OPA634
OPA635
|
4th-order elliptic bandpass filter
Abstract: ADS901 OPA2631 OPA2631U OPA2634 OPA631 OPA632 OPA634 OPA635 MARKING G1.G
Text: OPA2631 OPA 263 1 www.ti.com Dual, Low-Power, Single-Supply OPERATIONAL AMPLIFIER TM FEATURES DESCRIPTION ● ● ● ● ● ● The OPA2631 is a dual, low-power, voltage-feedback amplifier designed to operate on a single +3V or +5V supply. Operation on ±5V or +10V supplies is also
|
Original
|
PDF
|
OPA2631
OPA2631
130mV
68MHz)
4th-order elliptic bandpass filter
ADS901
OPA2631U
OPA2634
OPA631
OPA632
OPA634
OPA635
MARKING G1.G
|
u250a
Abstract: CASED56 M313B XLS-10
Text: s e M IK R D n Absolute Maximum Ratings Values Symbol Conditions 1 Units V ds RGE = 20 k Q Tcase = 25 °C / 80 °C V dgr |d Tcase = 100 °C 1 ms | dm V gs Pd Tj, Tstg) A C , 1 min., 200 jiA DIN 40 040 DIN IEC 68 T.1 V isol hum idity clim ate 100 100 400 / 300
|
OCR Scan
|
PDF
|
m313b
xls-10
M313B010
XLS-52
1E-05
CASED56
u250a
CASED56
XLS-10
|
diode BY127
Abstract: BY127 diode diode cross reference 1N4007 diode zener 1n4002 diode M100J zener diode cross reference P diode by127 g1g diode GP15M "cross reference" 1N4007 ZENER DIODE
Text: 6ENL INSTR/ POWER 2SE D • 30=10137 00G3315 1 ■ 7^ W - & Ô STANDARD SILICON RECTIFIERS continued • 1.0 »(A) DO11 PKG TYPE D041/D015 D015 II I D0204/VP Il li D041 I Sr VRRM (volts) - 50 GP10A BYW27-50 G1A 1N4001*/ M100A 100 GP10B BYW27-100 G1B 1N4002*/
|
OCR Scan
|
PDF
|
00D3315
D041/D015
D0204/
GP10A
BYW27-50
1N4Q017
M100A
GP10B
8YW27-1O0
1N4002
diode BY127
BY127 diode
diode cross reference 1N4007
diode zener 1n4002
diode M100J
zener diode cross reference
P diode by127
g1g diode
GP15M "cross reference"
1N4007 ZENER DIODE
|
PG06J
Abstract: diode rgp10g rgp10j diode RGP30J DIODE DIODE 10a 800v bridge diode 60a general instrument uf4006 RGP15J diode diode 1000V 10a FEP30JT
Text: C£X>G e n e r a l v S e m ic o n d u c t o r END-USEAPPLICATIONS '¿•it V BH I END-USE INPUT BRIDGE (A) O U TPUT/ SNUBBER Output DF08M W08G KBP08M GBU4K GBU6K GBU8K RGP10J RGP15J RGP30J FEP6JT FEP16JT FEP30JT 40V RGP10K RGP15K RGP30K 1.0A 1.5A 3.0A 5.0A
|
OCR Scan
|
PDF
|
DF04M
KBP04M
DF06M
KBP06M
RGP10J
RGP15J
RGP30J
FEP16JT
FEP30JT
SB040
PG06J
diode rgp10g
rgp10j diode
RGP30J DIODE
DIODE 10a 800v
bridge diode 60a
general instrument uf4006
RGP15J diode
diode 1000V 10a
|
Untitled
Abstract: No abstract text available
Text: Bulletin 127140 rev. B 09/97 Inte rn ation al IS R Rectifier IRK.56, .71 SERIES NEW ADD-A-pak Power Modules STANDARD DIODES Features 60 A 80 A • Electrically isolated: DBC base plate ■ 3500 VnMS isolating voltage ■ Standard JED EC package ■ Simplified mechanical designs, rapid assembly
|
OCR Scan
|
PDF
|
ULE78996
|
diode BY127 specifications
Abstract: GE diode 1N5061 diode by127 GP 524 DIODE diode cross reference 1N4245 diode 1n5392 GP+524+DIODE BYW27-40Q D0201AD 1N4245
Text: 6ENL INSTR/ POWER 2SE D • 30=10137 00G3315 1 ■ 7^ W -& Ô STANDARD SILICON RECTIFIERS continued • 1.0 »(A) DO 11 PKG TYPE D041/D015 D015 II I D0204/VP D041 Sr I Il li VRRM (volts) - 50 GP10A BYW27-50 G 1A 1N4001*/ M100A 100 GP10B BYW27-100 G1B 1N4002*/
|
OCR Scan
|
PDF
|
00G3315
D041/D015
D0204/VP
GP10A
GP10B
GP10D
BYW27-50
BYW27-100
BYW27-200
BY135GP
diode BY127 specifications
GE diode 1N5061
diode by127
GP 524 DIODE
diode cross reference 1N4245
diode 1n5392
GP+524+DIODE
BYW27-40Q
D0201AD
1N4245
|
LT1084 12v
Abstract: LT1084-12 LT1084-5 TRANSISTOR G13 lt1083-5ck LT1085CK LT1083-5 LT1083-5CK equivalent LT1083 Fixed
Text: u r m TECH N O LO G Y LT1083/84/85 Fixed 3 A , 5 A , 7 .5 A L o w D ro p o u t P o sitiv e Fixed R e g u la to rs FCflTURCS D C S C R IP TIO n • Three-Terminal 3.3V, 3.6V, 5Vand 12V ■ Output Current of 3A, 5A or 7.5A ■ Operates Down to 1V Dropout ■ Guaranteed Dropout Voltage at Multiple Current Levels
|
OCR Scan
|
PDF
|
LT1083/84/85
LT1083
TQ-220
LT1084 12v
LT1084-12
LT1084-5
TRANSISTOR G13
lt1083-5ck
LT1085CK
LT1083-5
LT1083-5CK equivalent
LT1083 Fixed
|
AN489 Analysis and Basic Operation of the MC1595
Abstract: MC1595 AN-489 MC1495 theory Analysis and Basic Operation of the mc1595 motorola AN489
Text: g MOTOROLA MC1495 Wideband Linear Four-Quadrant Multiplier The MC1495 is designed for use where the output is a linear product of two input voltages. Maximum versatility is assured by allowing the user to select the level shift method. Typical applications include: multiply, divide*,
|
OCR Scan
|
PDF
|
MC1495
b3b72S3
AN489 Analysis and Basic Operation of the MC1595
MC1595
AN-489 MC1495 theory
Analysis and Basic Operation of the mc1595
motorola AN489
|
LM 352 voltage regulator Ic
Abstract: ipos 150
Text: rruum _ LT1575/LT1577 TECHNOLOGY Ultrafast Transient Response, Low Dropout Regulators Adjustable and Fixed FCRTURCS DCSCRIPTIOn • Ultra Fast Transient Response Eliminates Tantalum and Electrolytic Output Capacitors ■ FET Rds on Defines Dropout Voltage
|
OCR Scan
|
PDF
|
LT1575/LT1577
1575/LT1577
15757f
LM 352 voltage regulator Ic
ipos 150
|
