Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    G21 DIODE Search Results

    G21 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    G21 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MA6 diode

    Abstract: diode G21 LMBD2838LT1 DIODE a5 g21 Transistor lt1 switch LMBD2837LT1 LMBD2837LT1G LMBD2838LT1G a5 marking
    Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diodes FETURE LMBD2837LT1 LMBD2838LT1 • Pb-Free Package is available. ORDERING INFORMATION Device Marking Shipping A5 3000/Tape&Reel A5 Pb-Free 3000/Tape&Reel LMBD2837LT1 LMBD2837LT1G LMBD2838LT1 LMBD2838LT1G


    Original     		PDF LMBD2837LT1 LMBD2838LT1 3000/Tape LMBD2837LT1G LMBD2838LT1G MA6 diode diode G21 LMBD2838LT1 DIODE a5 g21 Transistor lt1 switch LMBD2837LT1 LMBD2837LT1G LMBD2838LT1G a5 marking

    Untitled

    Abstract: No abstract text available
    Text: Monolithic Dual Switching Diodes ANODE 1 3 CATHODE MMBD2837LT1 MMBD2838LT1 2 ANODE 3 MAXIMUM RATINGS EACH DIODE Rating Peak Reverse Voltage D.C Reverse Voltage Symbol V RM VR Value 75 30 50 Unit Vdc Vdc Peak Forward Current I FM mAdc Average Rectified Current


    Original     		PDF MMBD2837LT1 MMBD2838LT1 236AB)

    g211

    Abstract: MA6 diode marking G21 g21 Transistor MMBD2837LT1 MMBD2838LT1
    Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diodes ANODE 1 3 CATHODE MMBD2837LT1 MMBD2838LT1 2 ANODE 3 MAXIMUM RATINGS EACH DIODE Rating Peak Reverse Voltage D.C Reverse Voltage Symbol V RM VR Value 75 30 50 Unit Vdc Vdc Peak Forward Current I FM


    Original     		PDF MMBD2837LT1 MMBD2838LT1 236AB) g211 MA6 diode marking G21 g21 Transistor MMBD2837LT1 MMBD2838LT1

    g23 sot23

    Abstract: sot23 G17 MMBZ4625
    Text: 350mW ZENER DIODES MMBZ46 SERIES • New Product SOT23 Pkg. TA = 25˚C • • • • • • • • • • • Nom. Test Voltage Current VZ@IZT IZT Type Marking V µA MMBZ4617 G17 2.4 250 MMBZ4618 G18 2.7 250 MMBZ4619 G19 3.0 250 MMBZ4620 G20 3.3 250 MMBZ4621


    Original     		PDF 350mW MMBZ46 MMBZ4617 MMBZ4618 MMBZ4619 MMBZ4620 MMBZ4621 MMBZ4622 MMBZ4623 MMBZ4624 g23 sot23 sot23 G17 MMBZ4625

    SOT-23 marking g23

    Abstract: g23 sot23 sot23 G17 marking G18 MMBZ4627 ZENER DIODES SOT-23 MMBZ4623 g23 sot-23 MMBZ4618 sot-23 MARKING CODE G18
    Text: NEW PRODUCT NEW PRODUCT NEW PRODUCT MMBZ4617 THRU MMBZ4627 ZENER DIODES SOT-23 FEATURES .122 3.1 .118 (3.0) .016 (0.4) ¨ Silicon Planar Low Noise Zener Diodes Top View ¨ 350mW high quality voltage regulator designed for low leakage, low current and low noise applications


    Original     		PDF MMBZ4617 MMBZ4627 OT-23 350mW OT-23 MIL-STD-750, 250mA SOT-23 marking g23 g23 sot23 sot23 G17 marking G18 MMBZ4627 ZENER DIODES SOT-23 MMBZ4623 g23 sot-23 MMBZ4618 sot-23 MARKING CODE G18

    SOT-23 marking g23

    Abstract: marking code ZENER g23 sot23 sot-23 MARKING CODE G18
    Text: NEW PRODUCT NEW PRODUCT NEW PRODUCT MMBZ4617 THRU MMBZ4627 ZENER DIODES SOT-23 FEATURES .122 3.1 .110 (2.8) .016 (0.4) ♦ Silicon Planar Low Noise Zener Diodes Top View ♦ 350mW high quality voltage regulator designed for low leakage, low current and low noise applications


    Original     		PDF MMBZ4617 MMBZ4627 OT-23 350mW OT-23 MIL-STD-750, MMBZ4618 MMBZ4619 MMBZ4620 SOT-23 marking g23 marking code ZENER g23 sot23 sot-23 MARKING CODE G18

    AN6818

    Abstract: 3N153 datasheet 40841 40841 dual gate mosfet 3N153 Harris CA3086 AN6668 CA3060 g21 Transistor gyrator
    Text: CA3060 Semiconductor T UCT ROD ACEMEN 47 P E 7 T L OLE REP 00-442-7 OBS ENDED 8 110kHz, Operational M ns 1 .com COM pplicatio @harris E R NO ntral A entapp Transconductance Amplifier Array Ce : c Call or email January 1999 Description • Low Power Consumption as Low as 100mW Per


    Original     		PDF CA3060 110kHz, 100mW CA3060 AN6818 3N153 datasheet 40841 40841 dual gate mosfet 3N153 Harris CA3086 AN6668 g21 Transistor gyrator

    AN6818

    Abstract: 40841 3N153 3N153 datasheet AN6668 CA3060 CA3060E CA3080 CA3280 AN-6818
    Text: S E M I C O N D U C T O R NS NDED NOT November 1996 MME RECO FOR ESIG NEW D CA3060 110kHz, Operational Transconductance Amplifier Array Features Description • Low Power Consumption as Low as 100mW Per Amplifier The CA3060 monolithic integrated circuit consists of an array of


    Original     		PDF CA3060 110kHz, 100mW CA3060 AN6818 40841 3N153 3N153 datasheet AN6668 CA3060E CA3080 CA3280 AN-6818

    SOT-23 marking g23

    Abstract: g23 sot-23 transistor g23 marking code V MMBZ4625 Low Noise Zener Diode MMBZ4617 MMBZ4618 MMBZ4619 G18 SOT-23
    Text: MMBZ4617 thru MMBZ4627 Vishay Semiconductors New Product formerly General Semiconductor Zener Diodes VZ Range 2.4 to 6.2V Power Dissipation 350mW SOT-23 Top View .122 3.1 .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 1 .007 (0.175) .005 (0.125)


    Original     		PDF MMBZ4617 MMBZ4627 350mW OT-23 OT-23 MIL-STD-750, E8/10K MMBZ4621 MMBZ4622 MMBZ4623 SOT-23 marking g23 g23 sot-23 transistor g23 marking code V MMBZ4625 Low Noise Zener Diode MMBZ4618 MMBZ4619 G18 SOT-23

    ZENER 1

    Abstract: MMBZ4617 MMBZ4618 MMBZ4619 MMBZ4620 MMBZ4621 MMBZ4622 MMBZ4627 g23 sot23 SOT-23 marking g23
    Text: MMBZ4617 thru MMBZ4627 Zener Diodes t c u rod P New VZ Range 2.4 to 6.2V Power Dissipation 350mW SOT-23 Top View .122 3.1 .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 1 Mounting Pad Layout .016 (0.4) .016 (0.4) 0.037 (0.9 0.037 (0.95) .045 (1.15)


    Original     		PDF MMBZ4617 MMBZ4627 350mW OT-23 OT-23 MIL-STD-750, E8/10K MMBZ4621 MMBZ4622 MMBZ4623 ZENER 1 MMBZ4618 MMBZ4619 MMBZ4620 MMBZ4621 MMBZ4622 MMBZ4627 g23 sot23 SOT-23 marking g23

    Diode Mark ON B14

    Abstract: Diode Mark B14 schottky barrier diode b22 BU7985KVT schottky B22 diode b27 BU7988 BU7988KVT TQFP100V TQFP100V Package
    Text: LVDS Interface ICs 56bit LVDS Receiver 8:56 DeSerializer BU7985KVT ●Description LVDS Interface IC of ROHM "Serializer" "Deserializer" operate from 8MHz to 150MHz wide clock range, and number of bits range is from 35 to 70. Data is transmitted seven times 7X stream and reduce cable number


    Original     		PDF 56bit BU7985KVT 150MHz 112MHz 180MHz) 20MHz 112MHz. TQFP100V 500pcs Diode Mark ON B14 Diode Mark B14 schottky barrier diode b22 BU7985KVT schottky B22 diode b27 BU7988 BU7988KVT TQFP100V TQFP100V Package

    BU7988KVT

    Abstract: DIODE B12 51 TQFP100V Package TA10 TA12 TA16 TQFP100V B12 2N DIODE diode b22 diode td15
    Text: LVDS Interface ICs 56bit LVDS Transmitter 56:8 Serializer BU7988KVT ●Description LVDS Interface IC of ROHM "Serializer" "Deserializer" operate from 8MHz to 150MHz wide clock range, and number of bits range is from 35 to 70. Data is transmitted seven times 7X stream and reduce cable number


    Original     		PDF 56bit BU7988KVT 150MHz 112MHz 224MHz) TQFP100V 500pcs 08T241A BU7988KVT DIODE B12 51 TQFP100V Package TA10 TA12 TA16 TQFP100V B12 2N DIODE diode b22 diode td15

    DIODE B23

    Abstract: DIODE B12 51 b1375 IC-1920 TOP MARK B2X
    Text: LVDS Interface ICs 56bit LVDS Receiver 8:56 DeSerializer BU7985KVT ●Description LVDS Interface IC of ROHM "Serializer" "Deserializer" operate from 8MHz to 150MHz wide clock range, and number of bits range is from 35 to 70. Data is transmitted seven times 7X stream and reduce cable number


    Original     		PDF 56bit BU7985KVT 150MHz 112MHz 180MHz) 20MHz 112MHz. DIODE B23 DIODE B12 51 b1375 IC-1920 TOP MARK B2X

    CA3049T

    Abstract: ca3049 CA3102 J307 CA3102 equivalent CA3102E CA3102M I9 transistor CA3102M96 m1k8
    Text: S E M I C O N D U C T O R CA3049, CA3102 Dual High Frequency Differential Amplifiers For Low Power Applications Up to 500MHz November 1996 Features Description • Power Gain 23dB Typ . . . . . . . . . . . . . . . . . . . 200MHz The CA3049T and CA3102 consist of two independent


    Original     		PDF CA3049, CA3102 500MHz 200MHz CA3049T CA3102 500MHz. ca3049 J307 CA3102 equivalent CA3102E CA3102M I9 transistor CA3102M96 m1k8

    diode b22

    Abstract: rohm b14 DIODE B23 ROHM R25
    Text: LVDS Interface ICs 56bit LVDS Receiver 8:56 DeSerializer BU7985KVT ●Description LVDS Interface IC of ROHM "Serializer" "Deserializer" operate from 8MHz to 150MHz wide clock range, and number of bits range is from 35 to 70. Data is transmitted seven times 7X stream and reduce cable number


    Original     		PDF 56bit BU7985KVT 150MHz 112MHz 180MHz) 20MHz 112MHz. R1010A diode b22 rohm b14 DIODE B23 ROHM R25

    schottky barrier diode b22

    Abstract: diode b27 Diode B2x Diode Mark ON B14 schottky B22 DIODE B23 BU7988KVT DIODE B12 51 Diode Mark B14 TQFP100V
    Text: LVDS Interface ICs 56bit LVDS Receiver 8:56 DeSerializer BU7985KVT ●Description LVDS Interface IC of ROHM "Serializer" "Deserializer" operate from 8MHz to 150MHz wide clock range, and number of bits range is from 35 to 70. Data is transmitted seven times 7X stream and reduce cable number


    Original     		PDF 56bit BU7985KVT 150MHz 112MHz 180MHz) 20MHz 112MHz. schottky barrier diode b22 diode b27 Diode B2x Diode Mark ON B14 schottky B22 DIODE B23 BU7988KVT DIODE B12 51 Diode Mark B14 TQFP100V

    DIODE B12 51

    Abstract: diode td15 BU7988KVT LVDS Serializer B12 2N DIODE B10B20 Diode Mark ON B14 b12 diode DIODE B12 DIODE B12 60
    Text: LVDS Interface ICs 56bit LVDS Transmitter 56:8 Serializer BU7988KVT ●Description LVDS Interface IC of ROHM "Serializer" "Deserializer" operate from 8MHz to 150MHz wide clock range, and number of bits range is from 35 to 70. Data is transmitted seven times 7X stream and reduce cable number


    Original     		PDF 56bit BU7988KVT 150MHz 112MHz 224MHz) TQFP100V DIODE B12 51 diode td15 BU7988KVT LVDS Serializer B12 2N DIODE B10B20 Diode Mark ON B14 b12 diode DIODE B12 DIODE B12 60

    schottky barrier diode b22

    Abstract: g17g diode td15
    Text: LVDS Interface ICs 56bit LVDS Transmitter 56:8 Serializer BU7988KVT ●Description LVDS Interface IC of ROHM "Serializer" "Deserializer" operate from 8MHz to 150MHz wide clock range, and number of bits range is from 35 to 70. Data is transmitted seven times 7X stream and reduce cable number


    Original     		PDF 56bit BU7988KVT 150MHz 112MHz 224MHz) TQFP100V R1010A schottky barrier diode b22 g17g diode td15

    diode td15

    Abstract: diode td13 DIODE B12 51 B12 68 diode
    Text: LVDS Interface ICs 56bit LVDS Transmitter 56:8 Serializer BU7988KVT ●Description LVDS Interface IC of ROHM "Serializer" "Deserializer" operate from 8MHz to 150MHz wide clock range, and number of bits range is from 35 to 70. Data is transmitted seven times 7X stream and reduce cable number


    Original     		PDF 56bit BU7988KVT 150MHz 112MHz 224MHz) TQFP100V diode td15 diode td13 DIODE B12 51 B12 68 diode

    diode G21

    Abstract: FD4A G22 diode LD4RA LD4A SD15 switching diode g21 DIODE diode G23
    Text: ELECTRICAL CHARACTERISTICS SINGLE HIGH VOLTAGE SWITCHING DIODE Forward Voltage V Dice Type HD3A rw m Max. vF Reverse Current T Ir @ lF Max. @ rr * VR Max. V V mA hA V ns 75 1.2 110 1 75 6 Geometry G19 DUAL HIGH VOLTAGE SWITCHING DIODE V Dice Type HD2A Forward Voltage


    OCR Scan     		PDF

    diode G21

    Abstract: marking G21 Z5 LD4RA BZX84-C27 BZX84C18 g21 Transistor BZX84C3V0 BZX84 BAV74 BAV99
    Text: SOT 23 DIODES SILICON PLANAR HIGH SPEED SWITCHING DIODES Ratings and Characteristics at 25°C ambient temperature Max. Type FM MD914 HD3A BAV70 BAV74 HD2A BAV99 BAW 56 HD4A * lF = 100m A D escription Single diode Single diode Dual diode w ith Dual diode w ith


    OCR Scan     		PDF FMMD914 BAV70 BAV74 BAV99 BAW56 100mA diode G21 marking G21 Z5 LD4RA BZX84-C27 BZX84C18 g21 Transistor BZX84C3V0 BZX84

    SOT-23 marking g23

    Abstract: g23 sot23 G18 SOT-23 sot-23 MARKING CODE G18 sot23 G17 SOT-23 g23 MMBZ4625 G21 SOT23 marking code SS SOT23
    Text: NEW PRODUCT NEW PRODUCT NEW PRODUCT MMBZ4617 THRU MMBZ4627 ZENER DIODES SOT-23 FEATURES .1 18 3.0 ♦ Silicon Planar Low Noise Zener Diodes Top View 0 1 6 (0 .4) a ♦ 350mW high quality voltage regulator designed for low leakage, low current and low noise applications


    OCR Scan     		PDF MMBZ4617 MMBZ4627 OT-23 350mW OT-23 MIL-STD-750, MMBZ4618 MMBZ4619 MMBZ4620 SOT-23 marking g23 g23 sot23 G18 SOT-23 sot-23 MARKING CODE G18 sot23 G17 SOT-23 g23 MMBZ4625 G21 SOT23 marking code SS SOT23

    g23 sot23

    Abstract: No abstract text available
    Text: . A . G eneral ^ S e m ic o n d u c to r MMBZ4617 thru MMBZ4627 Zener Diodes % Vz Range 2.4 to 6.2V Power Dissipation 350mW f t W SOT-23 Top View a •122 3.1 . 1 1 0 ( 2 .8 ) .016(0.4) 2 Top View □ 0 " Mounting Pad Layout h—0.037 0.03 (0.95) 0.037 (0.95)


    OCR Scan     		PDF MMBZ4617 MMBZ4627 350mW OT-23 MIL-STD-750, E8/10K 30K/box 30K/box Z4620 MMBZ4621 g23 sot23

    MDA2501

    Abstract: pbl302 g1756 g1756 Diode MDA2502 MDA970A6 MDA3510 MDA2500 MDA3502 Bridge rectifier mda970a1
    Text: DIOTEC ELECTRONICS CORP SflE D • Sfl^lG? ÜDOOlfl^ bTT WÊDIX Appendix IV: Cross Reference Tables <x^o\ _oZ_ SCHOTTKY BARRIER DIODES: INDUSTRY PART NO. 1N5817 1N5818 1N5819 1N5820 1N5821 1N5822 1N5823 1N5824 1N5825 MBR1035 MBR1045 MBR1050 MBR1060 MBR1090


    OCR Scan     		PDF 1N5817 1N5618 1N5818 1N5819 1N5820 1N5821 MDA2501 pbl302 g1756 g1756 Diode MDA2502 MDA970A6 MDA3510 MDA2500 MDA3502 Bridge rectifier mda970a1