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    Bel Fuse G27-111T-118

    CONN JACK 1PORT 10G UPOE
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    DigiKey G27-111T-118 Tray 232 1
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    Avnet Americas G27-111T-118 Bulk 54 Weeks, 1 Days 1
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    Interstate Connecting Components G27-111T-118 23
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    Sensata Circuit Breakers IEG2-71191-8-V

    CIR BRKR MAG-HYDR LEVER
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    DigiKey IEG2-71191-8-V Bulk 3
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    Vishay Siliconix DG2711DL-T1-E3

    IC SWITCH SPDTX1 600MOHM SC70-6
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    Sensata Circuit Breakers IEG2-71191-9-V

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    DigiKey IEG2-71191-9-V Bulk 3
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    Vishay Siliconix DG2711DL-T1-GE3

    IC SWITCH SPDTX1 600MOHM SC70-6
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    DigiKey DG2711DL-T1-GE3 Reel 3,000
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    G2711 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    G2711-01 Hamamatsu GaAsP photodiode Original PDF
    G27-111T-118 Bel Fuse Cconnector JACK 1PORT 10G UPOE Original PDF

    G2711 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    G1120

    Abstract: G1115 G1116 Hamamatsu G1118 G1117 G1118 G2711-01 G3067
    Text: PHOTODIODE GaAsPフォトダイオード 拡散型 可視域用フォトダイオード 特長 用途 l 低暗電流 l 高安定性 l 分析機器 l 色識別 • 一般定格／絶対最大定格 型名 G1115 G1116 G1117 G1118 G1120 G3067 G2711-01 外形


    Original     		PDF G1115 G1116 G1117 G1118 G1120 G3067 G2711-01 G1120 G1115 G1116 Hamamatsu G1118 G1117 G1118 G2711-01 G3067

    Untitled

    Abstract: No abstract text available
    Text: GaAsP photodiode Diffusion type Photodiode for visible light detection Features Applications Low dark current Analytical instrument High stability Color identification Structure / Absolute maximum ratings Type no. G1115 G1116 G1117 G1118 G1120 G3067 G2711-01


    Original     		PDF G1115 G1116 G1117 G1118 G1120 G3067 G2711-01 KGPD1002E02

    G1120

    Abstract: No abstract text available
    Text: GaAsP photodiode Diffusion type Photodiode for visible light detection Features Applications Low dark current Analytical instrument High stability Color identification Structure / Absolute maximum ratings Type no. G1115 G1116 G1117 G1118 G1120 G3067 G2711-01


    Original     		PDF G1115 G1116 G1117 G1118 G1120 G3067 G2711-01 KGPD1002E02 G1120

    Untitled

    Abstract: No abstract text available
    Text: GaAsPフォトダイオード 拡散型 可視域用フォトダイオード 特長 用途 低暗電流 分析機器 高安定性 色識別 構成／絶対最大定格 型名 外形 寸法図/ 窓材* パッケージ 受光面 サイズ 有効 受光面積


    Original     		PDF G1115 G1116 G1117 G1118 G1120 G3067 G2711-01 KGPDA0014JA KGPDA0002JA

    AM 5888

    Abstract: g1116 5888 C 5888 G1118 G1120 Photodiode g1117 G1115 G1117 G2711-01
    Text: PHOTODIODE GaAsP photodiode Diffusion type Photodiode for visible light detection Features Applications l Low dark current l High stability l Analytical instrument l Color identification • General ratings / Absolute maximum ratings Type No. G1115 G1116 G1117


    Original     		PDF G1115 G1116 G1117 G1118 G1120 G3067 G2711-01 SE-171 KGPD1002E01 AM 5888 g1116 5888 C 5888 G1118 G1120 Photodiode g1117 G1115 G1117 G2711-01

    AM 5888

    Abstract: G1118 G1116 G1120 G1115 G1117 G2711-01 G3067 Hamamatsu G1118
    Text: PHOTODIODE GaAsP photodiode Diffusion type Photodiode for visible light detection Features Applications l Low dark current l High stability l Analytical instrument l Color identification • General ratings / Absolute maximum ratings Type No. G1115 G1116 G1117


    Original     		PDF G1115 G1116 G1117 G1118 G1120 G3067 G2711-01 SE-171 KGPD1002E01 AM 5888 G1118 G1116 G1120 G1115 G1117 G2711-01 G3067 Hamamatsu G1118

    Untitled

    Abstract: No abstract text available
    Text: 0003b2fi HSt HPKJ PIN Silicon Photodiodes 3 Range Peak Sensitivity Wavelength À A p (nm) (nm) Spectral Dimensional Type No. Outline Package (P.42,43) Active Area Effective Size Active Area (mm) ( m m 2) 2.77X2.77 7.7 S2506-02 • S2506-04 S4707-01 S5077


    OCR Scan     		PDF 0003b2fi 633nm 930nm S2506-04 S2973 S3321 S4707-01 S5573 KSPDA0061EA KSPDA0062EA

    Untitled

    Abstract: No abstract text available
    Text: GaAsP Photodiodes Diffusion Types Type No. Dim ensional Outline (P.44-50)/ W indow Material Package Active Area Size Effective Active Area - (mm). (mm2) Spectral Response Range A (nm) Photo Sensitivity S Typ. (A/W ) , Peak Sensitivity Wavelength Ap : (nm)


    OCR Scan     		PDF G1116 G1117 G1120 G1737 KGPDB0004EA G1118, G3067, G1735, G1738j KSPDB0007EA

    C2719

    Abstract: S1190-01 s1223 pin photodiode S4160 equivalent s12271010b S4753 S3407-01 hamamatsu S1336 S4160 G1118
    Text: MHE'ìbCH 0 G03 b S l fi 3 T • HPKJ PHOTO ICs A photodiode and signal processing circuit are integrated. Photo ICs are intelligent light sensors consisting of a photodiode, signal processing circuit and signal output circuit. Molded in subminiature packages, these photo ICs are especially suited for


    OCR Scan     		PDF S4282-11 S4285-40 S4810 KSPDA00060EA S2833 S2833-01 KSPDA0061EA KSPDA0062EA D003t G2711-01 C2719 S1190-01 s1223 pin photodiode S4160 equivalent s12271010b S4753 S3407-01 hamamatsu S1336 S4160 G1118

    Untitled

    Abstract: No abstract text available
    Text: GaAsP Photodiodes Diffusion Types - Type No. I Dimensional Outline (P.46 to 53)/ Window Material '1 Area X Peak Sensitivity Wavelength ^p (mm2) (nm) (nm) Effective Active Active Package Area Size (mm) Spectral Response Range Photo Sensitivity S (A/W)


    OCR Scan     		PDF Isc100 G1115 G1116 G1117 G1118 G1120 G3067 G2711-01 G5645 G5842

    P873-G35-552

    Abstract: p1760-04 P873-13
    Text: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel­ oped a variety of opto-electronic semiconductor de­ vices. These competitively priced high quality products are designed to meet the requirements of general and


    OCR Scan     		PDF S-114 DK-2000 JAN/87 P873-G35-552 p1760-04 P873-13

    Untitled

    Abstract: No abstract text available
    Text: GaAsP Photodiodes Diffusion Types Dim ensional Outline (P.46 to 50V Package W indow Material *1 | T ype No. Active Area Size (mm) Area X Peak Sensitivity Wavelength Xp (mm2) (nm) (nm) Effective Spectral Response Range Photo Sensitivity S (A/W) Xp GaP LED


    OCR Scan     		PDF G1117 G1118 G1120 G2711-01 KGPDB0004 KGPDB0005EA KGPDB0007EA KGPDB0008EA

    S3407

    Abstract: S4036 S5533
    Text: Dimensional Outlines Unit : m m O S1226-18BQ, etc. 0 S1190-01, etc. 0 S2386-18L # 5 4 -0 2 WI NDOW iy o *o¿ ^ 4 PS > 0 j o 0 S5531, S5532, S5533 0 S2216-01, etc. O S1190-13 2 ^ r> 4 t ü i- 4 fih ‘ :i i V* 4 6>cj • 0 1 : o -cP -l: • > *'<i Y", 5 K 1 y jtj ¡Inirosiln . it«- ijl.iss!


    OCR Scan     		PDF S1226-18BQ, S2386-18L S1190-01, S1190-13 S2216-01, S5531, S5532, S5533 S2381, S2382, S3407 S4036 S5533

    S5532

    Abstract: No abstract text available
    Text: GGG3bEb bfl3 • HPKJ PIN Silicon Photodiodes 2 Dimensional Outline Type No. Package Window Material* S4280 O /K S5531 O /L 3-pin T O -1 8 with lens S4752 O /K 3-pin T O -1 8 S4753 ^ S5533 * Effective Size Active Area (mm) (mm!) ¿ 0 .8 0.5 Peak Spectral


    OCR Scan     		PDF S4280 S5531 S4752 S5533 S4753 S4751 S5532 KSPDA0061EA KSPDA0062EA D003t S5532

    S3407

    Abstract: No abstract text available
    Text: • 4 2 2 ^ 0 ^ 0DD31.22 T3A ■ HPKJ Silicon Photodiodes Visible/Visible to IR Range Dimensional CM ie Type No. (P.41-43V Window Material"1 S1087 Package Effective Area Size Active Area Spectral Response Photo Sensitivity S Typ. (A/W) Peak . Sensitivity


    OCR Scan     		PDF 0DD31 1-43V S1087 930nm 560nm 630nm S4011 S4160 S4160-01 S1133 S3407

    S3884

    Abstract: G1116
    Text: GaAsP Photodiodes Soecfrai Response Hange Ü Typ« No U nle ss o tn e rw ise noted, Typ T a - 2. Package Peak SensÜMy W »wíe«#ti Ä# Phcflp Sanwfcvtfy 5 k&Q (am (AAV) ’ »imi {mm} ShW! CînXHt Current tec 100 h V»*10 mV 2456 * Mg? Xsâp • fiarfc


    OCR Scan     		PDF 31-V0I5' G1115 G1116 G1120 G3067 G2711-01 G1735 G1736 Gf737 G1738 S3884

    photodiode

    Abstract: schottky photodiode uv photodiode, GaP GaP photodiode APD Si PIN PHOTODIODE uv photodiode Si apd photodiode 800 nm GaP photodiode PIN 38 PHOTODIODE
    Text: Index by Type No. Type No. Name Page S 1087. .Si Photodiode Visible/Visible to IR Range, for General Photometry . . 22, 23 S 1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23


    OCR Scan     		PDF G1115 G1116 G1117 G1118 G1120 G1126-02. S5107. S5139. S5343. S5344 photodiode schottky photodiode uv photodiode, GaP GaP photodiode APD Si PIN PHOTODIODE uv photodiode Si apd photodiode 800 nm GaP photodiode PIN 38 PHOTODIODE

    S1190-01

    Abstract: No abstract text available
    Text: MSaibtn G003b24 flOO • HPKJ PIN Silicon Photodiodes 1 Type No. Dimensional Outline (P.38)/ Window Material*1 S2216-01 S2839 /K Package O/K S1190-01 ® /L S1190-03 ® /K S1190-13 • /L ¿0.8 0.5 320 to 1060 900 0.57 0.55 ¿0.4 0.12 0.5 320 to 1000 800


    OCR Scan     		PDF G003b24 S2839 S1190-01 S1190-13 S1190-03 S2840 S1190 S2216-01 633nm 930nm S1190-01

    S1337-33BR

    Abstract: s4160 S3407 S1227-66BQ S5107 8S02
    Text: Dimensional Outlines Unit : mm O S1226-18BQ etc. S2386-18L S1190-01 etc. COMMON TO CASE COMMON T O C AS E KSPDA0047EA O S1190-13 f ¿ 2 .5 + 0 .2 f 2.5 4 ± 0 .2 The w in dow protrudes 0.2m m Max. above the rim. K type borosilicale glass win dow protrudes 0.2mm Max.


    OCR Scan     		PDF S1226-18BQ S2386-18L S1190-01 KSPDA0047EA S1190-13 S1226 G1116, G1736 S2386 S1336 S1337-33BR s4160 S3407 S1227-66BQ S5107 8S02

    g1962-01

    Abstract: u1116 G1126-02 G1120 hamamatsu PIN TO5 3x1015
    Text: !• * 5 9 HAMAMATSU HE CORP D HSHItiGT DGGHHTB S tàmsââiÊÈàùÊim *m *h GaAsP Photodiodes Effective Sensitive Area mm Package Type No. (mm> (Ta = 25°C) Peak Radiant Spectral Wavelength Sensitivity Response atXp Xp (nm) (nm) (A/W) Short Circuit Shunt


    OCR Scan     		PDF 100lux 2856K 1Q-90% G1117 G1120 G2711 G1735 G1736 G1737 G1738 g1962-01 u1116 G1126-02 hamamatsu PIN TO5 3x1015

    S2840

    Abstract: No abstract text available
    Text: • 4 2 2 ^ 0 "I 0003b5G TT2 ■ HPKJ Related Products PHOTOTRANSISTORS The phototransistor gives a large output current as compared to photodiodes. Hamamatsu supplies high-sensitivity phototransistors based on its long experience with opto-semiconductor technology.


    OCR Scan     		PDF 0003b5G S2829 S4404-01 S2041 S2042 KSPDA0061EA KSPDA0062EA D003t G2711-01 S2833-04, S2840

    Untitled

    Abstract: No abstract text available
    Text: 452'ïbGT 0G03b 30 004 HPK J PIN Silicon Photodiodes 4 Type No. S1223 Dimensional Outline (P.38-41)/ Window Material*1 Package /K TO-5 Active Area Size (mm) S1223-01 Short Photo Sensitivity S (A/W) Typ. Peak Spectral Circuit Response Sensitivity Current Isc


    OCR Scan     		PDF 0G03b S1223 660nm 780nm 830nm S1223-01 S3071 S1863-01 14mmTO-8 S3883

    Untitled

    Abstract: No abstract text available
    Text: 4 5 2 e!t i GÌ 00031a *47 30Ö • HPKJ Photodiode/Op Amp Devices Type No. Peak Spectral Active Area Response Sensitivity Size Range Wavelength mm (nm) (mm) Features S1406-03 2.4X2.4 190 to 1100 960 S1406-04 2.4X2.4 320 to 1100 960 S1406-05 2.4X2.4 190 to 1000


    OCR Scan     		PDF 00031a S1406-03 S1406-04 S1406-05 S1406-06 S5590 S5591 S3887 G1957 S1446,

    1117G

    Abstract: G1115
    Text: GaAsP Photodiodes Diffusion Types Type No. Dimensional Outline (P .4 0 -4 5 )/ W indow Package M aterial* Active A rea Size (mm) Effective Active A rea (m m 2) Spectral R esponse R ange A P eak Sensitivity Wavelength Ap (nm) (nm) Photo Se isitivity S (MN) Typ.


    OCR Scan     		PDF 560nm 633nm G3067 G2711 G1115 G2711 G1735 G3297 1117G