marking G3
Abstract: KDS196 G3 Package g3-1 sot 23 MARKING G3 SOT-23
Text: SEMICONDUCTOR KDS196 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 G3 1 2 Item Marking Description Device Mark G3 KDS196 hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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KDS196
OT-23
marking G3
KDS196
G3 Package
g3-1 sot 23
MARKING G3 SOT-23
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS196 SOT-23 Switching Diode FEATURES Low forward voltage Fast reverse recovery time MARKING: G3 1 3 2 Maximum Ratings @Ta=25℃ Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltage
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OT-23
1SS196
OT-23
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ISS19
Abstract: ISS196 marking G3 1SS196
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS196 SOT-23 Switching DIODES FEATURES y Low forward voltage : VF 3 =0.9V(typ.) y Fast reverse recovery time : trr=1.6ns(typ.) 1. N.C. MARKING: G3 2. ANODE 3. CATHODE Maximum Ratings @TA=25℃
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OT-23
1SS196
OT-23
100mA
ISS19
ISS196
marking G3
1SS196
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marking G3
Abstract: No abstract text available
Text: 1SS196 Switching Diodes SOT-23 1. N.C. 2. ANODE 3. CATHODE Features Low forward voltage : VF 3 =0.9V(typ.) Fast reverse recovery time : trr=1.6ns(typ.) MARKING: G3 Dimensions in inches and (millimeters) Maximum Ratings @TA=25℃ Parameter Symbol Limits
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1SS196
OT-23
100mA
marking G3
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AU7G
Abstract: DB3 5T B776 75AG A6J 8A x37c 73a3
Text: @>D+.<-'364 3UUR;=@A; " 9@ /;% ;+8<3<=9; " ;9.>-=$ >7 7 +;B 6KGYZWKX . - R 7H C7GA> FE; A@ 3 CJ : ;9: GA> E3 97 E75: @ A> A9J , ;I"]\#%[Oe R $@ EC; @ D;5 83 DE C75AG7C J 4 A6J 6; A67 ; L " -/ 7 R IEC 7? 7> J> AH C7G7CD7 C75AG7CJ 5: 3 C97 R/ > EC3 >
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009-134-A
O-247
PG-TO247-3
O-247,
AU7G
DB3 5T
B776
75AG
A6J 8A
x37c
73a3
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Untitled
Abstract: No abstract text available
Text: @>D+.<-'364 3UUR;=@A;"9@/;%;+8<3<=9; ";9.>-=$>77+;B 6KGYZWKX . - R 7HC7GA>FE;A@3CJ:;9:GA>E397E75:@A>A9J , ;I"]\#%[Oe R$@EC;@D;583DE C75AG7CJ4A6J6;A67 L ; -/ 7 R IEC7?7>J>AHC7G7CD7C75AG7CJ5:3C97
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C75AG7CJà
C3E76
53B34;
355AC6;
26892F
009-134-A
O-247
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Untitled
Abstract: No abstract text available
Text: MMBT589LT1 High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications http://onsemi.com 30 VOLTS, 2.0 AMPS PNP TRANSISTORS Features • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS TA = 25°C
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MMBT589LT1
MMBT589LT1/D
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MMBT589LT1
Abstract: MMBT589LT1G MMBT589LT3 MMBT589LT3G g3 ON sot-23
Text: MMBT589LT1 High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications http://onsemi.com 30 VOLTS, 2.0 AMPS PNP TRANSISTORS Features • Pb−Free Packages are Available 3 MAXIMUM RATINGS TA = 25°C Rating Symbol
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MMBT589LT1
OT-23
O-236)
MMBT589LT1/D
MMBT589LT1
MMBT589LT1G
MMBT589LT3
MMBT589LT3G
g3 ON sot-23
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trw rf
Abstract: ACRIAN trw rf transistors acrian inc trw transistors TRW MICROWAVE acrian rf power FUJITSU MICROWAVE MRF648 TPM4130
Text: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Max V BR CBO foac Max Gp Po N.F. at fT••t Ie Max (W) (Vl (Hz) (dB) (W) jdB) (Hz) JA) PD Mati. Toper Max jOe) Package Style UHFIMicrowave Transistors, Bipolar NPN (Cont'd) 5 10 UMOB55 RZ2731B60W
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UMOB55
RZ2731B60W
RZ2833B60W
RZ3135B50W
OME25
OME30L
MKB12100W5
BAL0204
UMIL60
UMIL70
trw rf
ACRIAN
trw rf transistors
acrian inc
trw transistors
TRW MICROWAVE
acrian rf power
FUJITSU MICROWAVE
MRF648
TPM4130
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marking E1 sot23-5
Abstract: G3 sot23-5 mark PD sot-23 TA SOT23-5 MARKING E.1 SOT23-5 E1 SOT23-5 sot23-5 footprint MC78PC18 sot23-5 e.1 marking MC78PC33
Text: MC78PC00 Series Low Noise 150 mA Low Drop Out LDO Linear Voltage Regulator The MC78PC00 are a series of CMOS linear voltage regulators with high output voltage accuracy, low supply current, low dropout voltage, and high Ripple Rejection. Each of these voltage regulators consists of
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MC78PC00
OT-23
OT-23-5
marking E1 sot23-5
G3 sot23-5
mark PD sot-23
TA SOT23-5 MARKING
E.1 SOT23-5
E1 SOT23-5
sot23-5 footprint
MC78PC18
sot23-5 e.1 marking
MC78PC33
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Untitled
Abstract: No abstract text available
Text: MMBT589LT1G, NSVMMBT589LT1G High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications http://onsemi.com 30 VOLTS, 2.0 AMPS PNP TRANSISTORS Features • AEC−Q101 Qualified and PPAP Capable NSV Prefix for Automotive and Other Applications Requiring
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MMBT589LT1G,
NSVMMBT589LT1G
MMBT589LT1/D
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MMBT589LT1
Abstract: MMBT589LT1G G3 SOT23-3
Text: MMBT589LT1 High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications http://onsemi.com 30 VOLTS, 2.0 AMPS PNP TRANSISTORS Features • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS TA = 25°C
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MMBT589LT1
MMBT589LT1/D
MMBT589LT1
MMBT589LT1G
G3 SOT23-3
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NSVMMBT589
Abstract: MARKING G3 Transistor
Text: MMBT589LT1G, NSVMMBT589LT1G High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications Features http://onsemi.com 30 VOLTS, 2.0 AMPS PNP TRANSISTORS • AEC−Q101 Qualified and PPAP Capable NSV Prefix for Automotive and Other Applications Requiring
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MMBT589LT1G,
NSVMMBT589LT1G
AEC-Q101
OT-23
O-236)
MMBT589LT1/D
NSVMMBT589
MARKING G3 Transistor
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B0679
Abstract: 2N6852 SOM3305 solitron transistors U2T101 2N685 DIODE 6AA BSS52 B0879
Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ic Max (A) PD Max (W) fT hFE Min Max (Hz) ICBO Max (A) t, Max (8) tf Max (8) TOper Max (OC) Package Style NPN Darlington Transistors, (Co nt' d) 5 10 MMST•A28 MPS·A28 MPS·A28 BST52
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BST52
BSP52
MPSA28
2S01698
2S01697
2S01699
BC879
B0679
2N6852
SOM3305
solitron transistors
U2T101
2N685
DIODE 6AA
BSS52
B0879
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Untitled
Abstract: No abstract text available
Text: High Voltage Switching Diode BAS21LT1 1 ANODE 3 CATHODE 3 MAXIMUM RATINGS Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol Value Unit VR IF 250 200 625 Vdc mAdc mAdc I FM surge 1 2 CASE 318–08, STYLE 8 SOT–23 (TO–236AB)
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BAS21LT1
236AB)
30mAdc,
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MMBT589LT1G
Abstract: No abstract text available
Text: MMBT589LT1G High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications http://onsemi.com 30 VOLTS, 2.0 AMPS PNP TRANSISTORS Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
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MMBT589LT1G
MMBT589LT1/D
MMBT589LT1G
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marking G3
Abstract: BAS21LT1 G32 diode G32 SOT23-6
Text: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode BAS21LT1 1 ANODE 3 CATHODE 3 MAXIMUM RATINGS Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol Value Unit VR IF 250 200 625 Vdc mAdc mAdc I FM surge 1 2 CASE 318–08, STYLE 8
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BAS21LT1
236AB)
30mAdc,
marking G3
BAS21LT1
G32 diode
G32 SOT23-6
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ST1536
Abstract: st433 st258 asl1000 st431 SL1010 ST1526 ST1302 tx st433 ST1556
Text: Fujitsu Microelectronics Europe User Guide FMEMCU-UG-910010-24 FR FAMILY EVALUATION BOARD SK-91460-MAIN V1.2 USER GUIDE This manual refers to PCB version V1.2 SK-91460-MAIN v1.2 Revision History Revision History Date 15.06.2005 22.06.2005 06.07.2005 18.07.2005
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FMEMCU-UG-910010-24
SK-91460-MAIN
ST371
UG-910010-24
32bit)
ST1536
st433
st258
asl1000
st431
SL1010
ST1526
ST1302
tx st433
ST1556
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MMBT589LT1
Abstract: 1E-05
Text: ON Semiconductort High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications MMBT589LT1 30 VOLTS 2.0 AMPS PNP TRANSISTOR MAXIMUM RATINGS TA = 25°C Rating Symbol Max Unit Collector–Emitter Voltage VCEO –30
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MMBT589LT1
236AB)
r14525
MMBT589LT1/D
MMBT589LT1
1E-05
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Untitled
Abstract: No abstract text available
Text: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion
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Untitled
Abstract: No abstract text available
Text: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion
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Untitled
Abstract: No abstract text available
Text: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion
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Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS709-00002-0v01-E 32-bit ARMTM CortexTM-M4F based Microcontroller MB9B460R Series MB9BF466M/N/R, MB9BF467M/N/R, MB9BF468M/N/R DESCRIPTION The MB9B460R Series are a highly integrated 32-bit microcontrollers dedicated for embedded controllers
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DS709-00002-0v01-E
32-bit
MB9B460R
MB9BF466M/N/R,
MB9BF467M/N/R,
MB9BF468M/N/R
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bfq34 application note
Abstract: ON4497 BFQ34 sf 122 transistor
Text: Philips Semiconductors h ^ 5 3 1 3 1 DD3 1 S5 Û G3 Ö • A P X ^ P r o d u c ts p e c ific a t i^ NPN 4 GHz wideband transistor BFQ34 N AriER P H I L I P S / D I S C R E T E fc.'JE » PINNING DESCRIPTION NPN transistor encapsulated in a 4 lead SOT 122A envelope with a
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DD31S5Ã
BFQ34
OT122A
ON4497)
bfq34 application note
ON4497
BFQ34
sf 122 transistor
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