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    td 4950

    Abstract: MG50J6ES50
    Text: TOSHIBA M G50J6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT G50J6ES50 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • 4-0 5.5 ± 0.3 7-M4 The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package.


    OCR Scan     		MG50J6ES50 G50J6ES50 2-94A2A 961001EAA2 td 4950 MG50J6ES50 PDF

    on semiconductor 50-5G

    Abstract: No abstract text available
    Text: TOSHIBA M G50J6ES50 TOSHIBA GTR MODULE m n SILICON N CHANNEL IGBT i f i F <; ç n HIGH PO W ER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. The Electrodes are Isolated from Case. High Input Impedance, 6 IGBTs Built Into 1 Package. Enhancement-Mode.


    OCR Scan     		G50J6ES50 on semiconductor 50-5G PDF