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    GA200SA60SP Search Results

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    GA200SA60SP Price and Stock

    Vishay Semiconductors VS-GA200SA60SP

    IGBT MODULE 600V 781W SOT227
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    DigiKey VS-GA200SA60SP Bulk 180
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    GA200SA60SP Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GA200SA60SP International Rectifier INSULATED GATE BIPOLAR TRANSISTOR Original PDF
    GA200SA60SPBF International Rectifier TRANS IGBT MODULE N-CH 600V 200A 4SOT-227 Original PDF

    GA200SA60SP Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    GA200SA60SP

    Abstract: No abstract text available
    Text: Bulletin I27235 07/06 GA200SA60SP Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz • Lowest conduction losses available • Fully isolated package 2,500 volt AC


    Original     		I27235 GA200SA60SP OT-227 OT-227 GA200SA60SP PDF

    Untitled

    Abstract: No abstract text available
    Text: Not recommended for new design, use VS-GA250SA60S VS-GA200SA60SP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available


    Original     		VS-GA250SA60S VS-GA200SA60SP OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    GA200SA60SP

    Abstract: No abstract text available
    Text: GA200SA60SP Vishay High Power Products Insulated Gate Bipolar Transistor Standard Speed IGBT , 100 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 1 kHz C • Lowest conduction losses available • Fully isolated package (2500 VAC)


    Original     		GA200SA60SP OT-227 2002/95/EC 18-Jul-08 GA200SA60SP PDF

    GA200SA60SP

    Abstract: No abstract text available
    Text: GA200SA60SP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)


    Original     		GA200SA60SP OT-227 2002/95/EC 18-Jul-08 GA200SA60SP PDF

    CGC SWITCH

    Abstract: transistor 342 pf GA200SA60SP
    Text: GA200SA60SP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)


    Original     		GA200SA60SP OT-227 E78996 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 CGC SWITCH transistor 342 pf GA200SA60SP PDF

    smps tig welding

    Abstract: transistor 342 G GA200SA60SP
    Text: GA200SA60SP Vishay High Power Products Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)


    Original     		GA200SA60SP OT-227 2002/95/EC 18-Jul-08 smps tig welding transistor 342 G GA200SA60SP PDF

    GA200SA60SP

    Abstract: No abstract text available
    Text: GA200SA60SP Vishay High Power Products Insulated Gate Bipolar Transistor Standard Speed IGBT , 100 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 1 kHz C G RoHS • Fully isolated package (2500 VAC) COMPLIANT • Very low internal inductance (5 nH typical)


    Original     		GA200SA60SP OT-227 18-Jul-08 GA200SA60SP PDF

    GA200SA60SP

    Abstract: No abstract text available
    Text: GA200SA60SP Vishay High Power Products Insulated Gate Bipolar Transistor Standard Speed IGBT , 100 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 1 kHz C G RoHS • Fully isolated package (2500 VAC) COMPLIANT • Very low internal inductance (5 nH typical)


    Original     		GA200SA60SP OT-227 12-Mar-07 GA200SA60SP PDF

    GA200SA60SP

    Abstract: GA200SA60S
    Text: GA200SA60SP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)


    Original     		GA200SA60SP OT-227 E78996 2002/95/EC 11-Mar-11 GA200SA60SP GA200SA60S PDF

    GA200SA60SP

    Abstract: smps tig welding transistor 342 G
    Text: GA200SA60SP Vishay High Power Products Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)


    Original     		GA200SA60SP OT-227 2002/95/EC 18-Jul-08 GA200SA60SP smps tig welding transistor 342 G PDF

    CGC SWITCH

    Abstract: 600v 400a IGBT driver ga200sa60 GA200SA60SP
    Text: Bulletin I27235 07/06 GA200SA60SP Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz • Lowest conduction losses available • Fully isolated package 2,500 volt AC


    Original     		I27235 GA200SA60SP OT-227 OT-227 12-Mar-07 CGC SWITCH 600v 400a IGBT driver ga200sa60 GA200SA60SP PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor PDF

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter PDF