hittite j
Abstract: Hydrogen GaAs 0.15 pHEMT mmic j PHILADELPHIA
Text: v00.0105 APPLICATION NOTES HYDROGEN EFFECTS ON GaAs pHEMT DEVICES Introduction: The effects of residual Hydrogen H2 on GaAs pHEMT devices in hermetically sealed packages are well documented by the GaAs MMIC community. This application note is intended to serve as an overview of this
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ka band gaas fet Package
Abstract: TGA4516 ka-band amplifier AMC8515
Text: Ka-Band 2W Power Amplifier TGA4516-TS Key Features • • • • • • 30 - 40 GHz Bandwidth > 33 dBm Nominal Psat @ Pin = 20dBm 18 dB Nominal Gain Bias: 6 V, 1050 mA Idq 1.9A under RF Drive 0.15 um 3MI MMW pHEMT Technology Thermal Spreader Dimensions:
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TGA4516-TS
20dBm
TGA4516
1050mA
ka band gaas fet Package
ka-band amplifier
AMC8515
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pseudomorphic HEMT
Abstract: fpd7612general FPD7612 MIL-HDBK-263 AlGaAs resistivity
Text: FPD7612 FPD7612General Purpose pHEMT GENERAL PURPOSE pHEMT Package Style: Bare Die Product Description Features The FPD7612 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx200μm Schottky barrier gate, defined by high-resolution stepper-based photolithography. The recessed
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FPD7612
FPD7612General
FPD7612
25mx200m
12GHz
18GHz
22-A114.
MIL-STD-1686
MIL-HDBK-263.
pseudomorphic HEMT
MIL-HDBK-263
AlGaAs resistivity
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SPF-2086TKZ
Abstract: spf2086tkz SPF-2086TKZ applications 54-101 SPF-2086tk SPF2086TK hbt sot-86
Text: SPF-2086TKZ SPF-2086TKZ Low Noise pHEMT GaAs FET 0.1 GHz to 12 GHz Operation LOW NOISE pHEMT GaAs FET 0.1 GHz to 12 GHz OPERATION NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free Package: SOT-86 Product Description Features Si BiCMOS SiGe HBT 20 10
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SPF-2086TKZ
OT-86
EDS-101225
SPF-2086TKZ
spf2086tkz
SPF-2086TKZ applications
54-101
SPF-2086tk
SPF2086TK
hbt sot-86
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Untitled
Abstract: No abstract text available
Text: Ka-Band 2W Power Amplifier TGA4516-TS Key Features • • • • • • 30 - 40 GHz Bandwidth > 33 dBm Nominal Psat @ Pin = 20dBm 18 dB Nominal Gain Bias: 6 V, 1050 mA Idq 1.9A under RF Drive 0.15 um 3MI MMW pHEMT Technology Thermal Spreader Dimensions:
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TGA4516-TS
20dBm
1050mA
TGA4516
0007-inch
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Quality System
Abstract: GaN Amplifiers Wireless Amplifiers Hybrid Modules mwtinc GM-141526-H4
Text: MMIC Amplifiers High Performance/Quality MMIC Based on InGaP HBT, pHEMT, and Linear MESFET Technologies High Linearity, Fully Matched WiMax Power Amplifiers Military Screening Available on Hermetically Sealed Package Products Low Cost Commercial Products
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Untitled
Abstract: No abstract text available
Text: Ka-Band 2W Power Amplifier TGA4516-TS Key Features • • • • • • 30 - 40 GHz Bandwidth > 33 dBm Nominal Psat @ Pin = 20dBm 18 dB Nominal Gain Bias: 6 V, 1050 mA Idq 1.9A under RF Drive 0.15 um 3MI MMW pHEMT Technology Thermal Spreader Dimensions:
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TGA4516-TS
20dBm
TGA4516
TGA45cal
0007-inch
TGA4516-TS
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TGA4507
Abstract: No abstract text available
Text: Product Data Sheet August 5, 2008 Ka Band Low Noise Amplifier TGA4507 Key Features • • • • • • • Typical Frequency Range: 28 - 36 GHz 2.3 dB Nominal Noise Figure 22 dB Nominal Gain 12 dBm Nominal P1dB Bias 3.0 V, 60 mA 0.15 um 3MI pHEMT Technology
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TGA4507
TGA4507
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Untitled
Abstract: No abstract text available
Text: Product Data Sheet August 5, 2008 Ka Band Low Noise Amplifier TGA4507 Key Features • • • • • • • Typical Frequency Range: 28 - 36 GHz 2.3 dB Nominal Noise Figure 22 dB Nominal Gain 12 dBm Nominal P1dB Bias 3.0 V, 60 mA 0.15 um 3MI pHEMT Technology
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Abstract: No abstract text available
Text: TGA2513 Wideband LNA Key Features • • • • • • • Product Description The TriQuint TGA2513 is a compact LNA/Gain Block MMIC. The LNA operates from 2-23 GHz and is designed using TriQuint’s proven standard 0.15 um gate pHEMT production process.
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TGA2513
TGA2513
-60mV
0007-inch
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TGA2513
Abstract: Q1-Q10 GaAs 0.15 um pHEMT
Text: TGA2513 Wideband LNA Key Features • • • • • • • Product Description The TriQuint TGA2513 is a compact LNA/Gain Block MMIC. The LNA operates from 2-23 GHz and is designed using TriQuint’s proven standard 0.15 um gate pHEMT production process.
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TGA2513
TGA2513
-60mV
0007-inch
Q1-Q10
GaAs 0.15 um pHEMT
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TGA4516
Abstract: ids 2560
Text: TGA4516 Ka Band 2W Power Amplifier Key Features • • • • 30 - 40 GHz Bandwidth > 33 dBm Nominal Psat @ Pin = 20dBm 18 dB Nominal Gain Bias: 6 V, 1050 mA Idq 1.9A under RF Drive 0.15 um 3MI pHEMT Technology Chip Dimensions: 2.79 x 2.315 x 0.1 mm (0.110 x 0.091 x 0.004) in
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TGA4516
20dBm
TGA4516
1050mA
ids 2560
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ka-band amplifier
Abstract: all electrical symbol TGA4507-EPU
Text: Advance Product Information February 20, 2003 Ka Band Low Noise Amplifier TGA4507-EPU Key Features • • • • • • • Typical Frequency Range: 28 - 36 GHz 22 dB Nominal Gain 2.3 dB Nominal Noise Figure 12 dBm Nominal P1dB Bias 3.0 V, 60 mA 0.15 um 3MI pHEMT Technology
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TGA4507-EPU
ka-band amplifier
all electrical symbol
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fet amplifier schematic
Abstract: high end amplifier schematics TL74 of 3842 c cor hybrid amplifier modules MITSUBISHI Microwave TL71 high power fet amplifier schematic TL78 mitsubishi gaAs 1998
Text: Design and Performance of a 1.6-2.2 GHz Low-Noise, High Gain Dual Amplifier in GaAs E-pHEMT White Paper Abstract — The design and realization of a dual lownoise amplifier LNA module in the 2 GHz band suitable for balanced receiver front-end application
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XC1900E-03
AV01-0258EN
fet amplifier schematic
high end amplifier schematics
TL74
of 3842
c cor hybrid amplifier modules
MITSUBISHI Microwave
TL71
high power fet amplifier schematic
TL78
mitsubishi gaAs 1998
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all electrical symbol
Abstract: TGA4507-EPU
Text: Advance Product Information January 7, 2004 Ka Band Low Noise Amplifier TGA4507-EPU Key Features • • • • • • • Typical Frequency Range: 28 - 36 GHz 2.3 dB Nominal Noise Figure 22 dB Nominal Gain 12 dBm Nominal P1dB Bias 3.0 V, 60 mA 0.15 um 3MI pHEMT Technology
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TGA4507-EPU
26tching
all electrical symbol
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Untitled
Abstract: No abstract text available
Text: Advance Product Information February 14, 2008 Ka Band Low Noise Amplifier TGA4507-EPU Key Features • • • • • • • Typical Frequency Range: 28 - 36 GHz 2.3 dB Nominal Noise Figure 22 dB Nominal Gain 12 dBm Nominal P1dB Bias 3.0 V, 60 mA 0.15 um 3MI pHEMT Technology
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TGA4516
Abstract: No abstract text available
Text: Advance Product Information December 2, 2004 Ka-Band 2W Power Amplifier TGA4516 Key Features • • • • 30 - 40 GHz Bandwidth > 33 dBm Nominal Psat @ Pin = 20dBm 18 dB Nominal Gain Bias: 6 V, 1050 mA Idq 1.9A under RF Drive 0.15 um 3MI MMW pHEMT Technology
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TGA4516
20dBm
1050mA
TGA4516
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Untitled
Abstract: No abstract text available
Text: Advance Product Information February 10, 2006 Ka-Band 2W Power Amplifier TGA4516 Key Features • • • • • • 30 - 40 GHz Bandwidth > 33 dBm Nominal Psat @ Pin = 20dBm 18 dB Nominal Gain Bias: 6 V, 1050 mA Idq 1.9A under RF Drive 0.15 um 3MI MMW pHEMT Technology
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TGA4516
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TGA4516
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Untitled
Abstract: No abstract text available
Text: TGA4906 4 Watt Ka-Band HPA Key Features • • • • • • • Measured Performance Frequency Range: 28 - 31 GHz 36 dBm Nominal Psat Gain: 24 dB Return Loss: -8 dB Bias: Vd = 6 V, Idq = 1.6 A, Vg = -0.75 V Typical Technology: 3MI 0.15 um Power pHEMT Chip Dimensions: 2.98 x 2.90 x 0.05 mm
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TGA4906
TGA4906
0007-inch
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TGA4906
Abstract: No abstract text available
Text: TGA4906 4 Watt Ka-Band HPA Key Features • • • • • • • Measured Performance Frequency Range: 28 - 31 GHz 36 dBm Nominal Psat Gain: 24 dB Return Loss: -8 dB Bias: Vd = 6 V, Idq = 1.6 A, Vg = -0.75 V Typical Technology: 3MI 0.15 um Power pHEMT Chip Dimensions: 2.98 x 2.90 x 0.05 mm
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TGA4906
TGA4906
0007-inch
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TGA4906
Abstract: TGA4916
Text: TGA4906 4 Watt Ka-Band HPA Key Features • • • • • • • Measured Performance Frequency Range: 28 - 31 GHz 36 dBm Nominal Psat Gain: 24 dB Return Loss: -8 dB Bias: Vd = 6 V, Idq = 1.6 A, Vg = -0.75 V Typical Technology: 3MI 0.15 um Power pHEMT Chip Dimensions: 2.98 x 2.90 x 0.05 mm
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TGA4906
TGA4906
TGA4916
0007-inch
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TGA4906
Abstract: TGA4916
Text: TGA4906 4 Watt Ka-Band HPA Key Features • • • • • • • Measured Performance Frequency Range: 28 - 31 GHz 36 dBm Nominal Psat Gain: 24 dB Return Loss: -8 dB Bias: Vd = 6 V, Idq = 1.6 A, Vg = -0.75 V Typical Technology: 3MI 0.15 um Power pHEMT Chip Dimensions: 2.98 x 2.90 x 0.05 mm
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TGA4906
TGA4906
TGA4916
0007-inch
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Untitled
Abstract: No abstract text available
Text: Advance Product Information February 19, 2003 K Band Low Noise Amplifier TGA4506-EPU Key Features • • • • • • • Typical Frequency Range: 20 - 27 GHz 21 dB Nominal Gain 2.2 dB Nominal Noise Figure 12 dBm Nominal P1dB Bias 3.5 V, 60 mA 0.15 um 3MI pHEMT Technology
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GaAs 0.15 um pHEMT
Abstract: Ultra low noise amplifier GaAs 0.15 pHEMT
Text: Ultra Low Noise An Ci IX Y Scompari Ultra Low Noise pHEMTS • Low Noise Figure MwT-LNZOO MwT-LN600 • High A ssociated Gain 3 0 0 //. 6 6 0 0 / 1.5 • O peration u p to 30 GHz • 0.15 um GaAs p H e m t Process • Com m ercial Applications • M ilitary A pplications
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MwT-LN300
300/J.
MwT-LN600
MLA-0522A
MLA-01122B
MLA-061S3A
GaAs 0.15 um pHEMT
Ultra low noise amplifier
GaAs 0.15 pHEMT
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