smd diode GW
Abstract: TSML1020 DATA SHEET high power infrared led TEMT1000 TSML1000 TSML1020 TSML1030 TSML1040 GaAs 1000 nm Infrared Diode,
Text: TSML1000, TSML1020, TSML1030, TSML1040 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES TSML1000 TSML1020 • Package type: surface mount • Package form: GW, RGW, yoke, axial • Dimensions L x W x H in mm : 2.5 x 2 x 2.7
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TSML1000,
TSML1020,
TSML1030,
TSML1040
TSML1000
TSML1020
TSML1030
TEMT1000
J-STD-020
smd diode GW
TSML1020 DATA SHEET
high power infrared led
TEMT1000
TSML1000
TSML1020
TSML1030
TSML1040
GaAs 1000 nm Infrared Diode,
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smd diode GW
Abstract: No abstract text available
Text: TSML1000, TSML1020, TSML1030, TSML1040 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES TSML1000 TSML1020 • Package type: surface mount • Package form: GW, RGW, yoke, axial • Dimensions L x W x H in mm : 2.5 x 2 x 2.7
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TSML1000,
TSML1020,
TSML1030,
TSML1040
TSML1000
TSML1020
TSML1030
TEMT1000
J-STD-020
smd diode GW
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PDF
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TSAL5300
Abstract: No abstract text available
Text: TSAL5300 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Leads with stand-off • Peak wavelength: λp = 940 nm • High reliability
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TSAL5300
TSAL5300
2002/95/EC
2002/96/EC
18-Jul-08
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TSAL5300
Abstract: No abstract text available
Text: TSAL5300 High Power Infrared Emitting Diode, Vishay Semiconductors 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : ∅ 5 Leads with stand-off Peak wavelength: λp = 940 nm
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TSAL5300
2002/95/EC
2002/96/EC
TSAL5300
18-Jul-08
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PDF
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VTE1063
Abstract: VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2 VTE1285
Text: infrared emitting diodes Features 880 nm • Nine standard packages in hermetic and low-cost epoxy • End- and side-radiating packages • Graded Output • High efficiency GaAIAs, 880 nm LPE process Delivers twice the power of conventional GaAs 940 nm emitters
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VTE7172
VTE7173
VTE1013
VTE1113
VTE3322LA
VTE3324LA
VTE3372LA
VTE3374LA
VTE1063
VTE1163
VTE1261
VTE1262
VTE1281-1
VTE1281-2
VTE1281F
VTE1281W-1
VTE1281W-2
VTE1285
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TSAL5300-MSZ
Abstract: No abstract text available
Text: TSAL5300 High Power Infrared Emitting Diode, Vishay Semiconductors 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : ∅ 5 Leads with stand-off Peak wavelength: λp = 940 nm
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TSAL5300
2002/95/EC
2002/96/EC
TSAL5300
11-Mar-11
TSAL5300-MSZ
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TSTS7300
Abstract: No abstract text available
Text: TSTS7300 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : ∅ 4.7 • Peak wavelength: λp = 950 nm • High reliability • High radiant power • High radiant intensity
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TSTS7300
2002/95/EC
2002/96/EC
TSTS7300
18-Jul-08
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PDF
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TSTS7100
Abstract: No abstract text available
Text: TSTS7100 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : ∅ 4.7 • Peak wavelength: λp = 950 nm • High reliability • High radiant power • High radiant intensity
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TSTS7100
2002/95/EC
2002/96/EC
TSTS7100
18-Jul-08
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TSAL5100
Abstract: Infrared Emitting Diode
Text: TSAL5100 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES DESCRIPTION • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : ∅ 5 Leads with stand-off Peak wavelength: λp = 940 nm
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TSAL5100
2002/95/EC
2002/96/EC
TSAL5100
18-Jul-08
Infrared Emitting Diode
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TSAL5100
Abstract: high power infrared led Infrared Emitting Diode GaAs 1000 nm Infrared Diode,
Text: TSAL5100 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • 96 11505 DESCRIPTION TSAL5100 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power, molded in
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TSAL5100
TSAL5100
2002/95/EC
2002/96/EC
18-Jul-08
high power infrared led
Infrared Emitting Diode
GaAs 1000 nm Infrared Diode,
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TSAL6100 application
Abstract: TSAL6100 GaAs 1000 nm Infrared Diode,
Text: TSAL6100 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity
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TSAL6100
2002/95/EC
2002/96/EC
TSAL6100
18-Jul-08
TSAL6100 application
GaAs 1000 nm Infrared Diode,
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PDF
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TSAL6100
Abstract: high power infrared led
Text: TSAL6100 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power
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TSAL6100
2002/95/EC
2002/96/EC
TSAL6100
18-Jul-08
high power infrared led
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PDF
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Vishay Semiconductors tsts7500
Abstract: TSTS7500
Text: TSTS7500 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : ∅ 4.7 • Peak wavelength: λp = 950 nm • High reliability • High radiant power • High radiant intensity
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TSTS7500
2002/95/EC
2002/96/EC
TSTS7500
18-Jul-08
Vishay Semiconductors tsts7500
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VSMS3700
Abstract: VSMS3700-GS08 VSMS3700-GS18
Text: VSMS3700 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 60°
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VSMS3700
VEMT3700
J-STD-020
VSMS3700
AEC-Q101
20lectual
18-Jul-08
VSMS3700-GS08
VSMS3700-GS18
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J-STD-020D
Abstract: VSMS3700 VSMS3700-GS08 VSMS3700-GS18
Text: VSMS3700 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 950 nm • High reliability
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VSMS3700
VEMT3700
J-STD-020
2002/95/EC
2002/96/EC
VSMS3700
18-Jul-08
J-STD-020D
VSMS3700-GS08
VSMS3700-GS18
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TSAL4400
Abstract: APPLICATION CIRCUIT OF TSAL4400 Application NOTES TSAL4400 TEFT4300 high power infrared led
Text: TSAL4400 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : ∅ 3 • Peak wavelength: λp = 940 nm • High reliability • High radiant power
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TSAL4400
TEFT4300
TSAL4400
2002/95/EC
2002/96/EC
18-Jul-08
APPLICATION CIRCUIT OF TSAL4400
Application NOTES TSAL4400
TEFT4300
high power infrared led
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TSAL7200
Abstract: No abstract text available
Text: TSAL7200 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity
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TSAL7200
2002/95/EC
2002/96/EC
TSAL7200
18-Jul-08
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PDF
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TSAL7400
Abstract: high power infrared led
Text: TSAL7400 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power
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TSAL7400
2002/95/EC
2002/96/EC
TSAL7400
18-Jul-08
high power infrared led
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PDF
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high power infrared led
Abstract: TSAL7600
Text: TSAL7600 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power
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TSAL7600
2002/95/EC
2002/96/EC
TSAL7600
18-Jul-08
high power infrared led
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PDF
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high power infrared led
Abstract: TSAL7200
Text: TSAL7200 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power
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TSAL7200
2002/95/EC
2002/96/EC
TSAL7200
18-Jul-08
high power infrared led
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PDF
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Untitled
Abstract: No abstract text available
Text: TSTS7100 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : ∅ 4.7 • Peak wavelength: λp = 950 nm • High reliability • High radiant power • High radiant intensity
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TSTS7100
2002/95/EC
2002/96/EC
TSTS7100
11-Mar-11
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PDF
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TSAL7400
Abstract: No abstract text available
Text: TSAL7400 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity
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TSAL7400
2002/95/EC
2002/96/EC
TSAL7400
18-Jul-08
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PDF
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TSAL7600
Abstract: Infrared Emitting Diode
Text: TSAL7600 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity
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TSAL7600
2002/95/EC
2002/96/EC
TSAL7600
18-Jul-08
Infrared Emitting Diode
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PDF
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GaAs 1000 nm Infrared Diode,
Abstract: No abstract text available
Text: Infrared Products Explanation o f Part Number: H I CD R B _5 © A A - @ ® • _c @ 1.Infrared products kinds: HIR: infrared emitter. HPD: photo diode. HPT: photo transistor. 2.Shape distinguish: B: bell round type. R: rectangular type. MIB: miniature bell type.
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