S 1040 smd
Abstract: 1030 mhz TSML1020 TEMT1000 TSML1000 TSML1030 TSML1040
Text: TSML1000 / 1020 / 1030 / 1040 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs TSML1000 Description TSML1000 series are high efficiency infrared emitting diodes in GaAlAs on GaAs technology molded in clear SMD package. This technology represents best performance for radiant power under pulse conditions, forward voltage
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TSML1000
TSML1000
TSML1020
TSML1030
TSML1040
TEMT1000
08-Apr-05
S 1040 smd
1030 mhz
TSML1020
TEMT1000
TSML1030
TSML1040
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Photointerrupter
Abstract: No abstract text available
Text: TSML1000/1020/1030/1040 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs TSML1000 Description TSML1000 series are high efficiency infrared emitting diodes in GaAlAs on GaAs technology molded in clear SMD package. This technology represents best performance for radiant power under pulse conditions, forward voltage
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TSML1000/1020/1030/1040
TSML1000
TSML1000
TSML1020
TSML1030
TSML1040
TEMT1000
18-Jul-08
Photointerrupter
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S 1040 smd
Abstract: TSML1020 TEMT1000 TSML1000 TSML1030 TSML1040
Text: TSML1000 / 1020 / 1030 / 1040 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs TSML1000 Description TSML1000 series are high efficiency infrared emitting diodes in GaAlAs on GaAs technology molded in clear SMD package. This technology represents best performance for radiant power under pulse conditions, forward voltage
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TSML1000
TSML1000
TSML1020
TSML1030
TSML1040
TEMT1000
D-74025
08-Mar-05
S 1040 smd
TSML1020
TEMT1000
TSML1030
TSML1040
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TSML1020
Abstract: TEMT1000 TSML1000 TSML1030 TSML1040
Text: TSML1000/1020/1030/1040 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs TSML1000 Description TSML1000 series are high efficiency infrared emitting diodes in GaAlAs on GaAs technology molded in clear SMD package. This technology represents best performance for radiant power under pulse conditions, forward voltage
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TSML1000/1020/1030/1040
TSML1000
TSML1000
TSML1020
TSML1030
TSML1040
TEMT1000
08-Apr-05
TSML1020
TEMT1000
TSML1030
TSML1040
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TEMD1000
Abstract: TSMF1000 TSMF1020 TSMF1030 TSMF1040
Text: TSMF1000/1020/1030/1040 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSMF1000 TSMF1000 series are high speed infrared emitting diodes in GaAlAs/GaAs/GaAlAs double hetero technology DH molded in clear SMD package with dome
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TSMF1000/1020/1030/1040
TSMF1000
TSMF1000
TSMF1020
TSMF1030
TSMF1040
08-Apr-05
TEMD1000
TSMF1020
TSMF1030
TSMF1040
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Untitled
Abstract: No abstract text available
Text: TSMF1000 / 1020 / 1030 / 1040 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero TSMF1000 Description TSMF1000 series are high speed infrared emitting diodes in GaAlAs/GaAs/GaAlAs double hetero technology DH molded in clear SMD package with dome
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TSMF1000
TSMF1020
TSMF1030
TSMF1040
TEMD1000
08-Apr-05
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PDF
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Untitled
Abstract: No abstract text available
Text: TSMF1000 / 1020 / 1030 / 1040 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero TSMF1000 Description TSMF1000 series are high speed infrared emitting diodes in GaAlAs/GaAs/GaAlAs double hetero technology DH molded in clear SMD package with dome
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TSMF1000
TSMF1020
TSMF1030
TSMF1040
TEMD1000
D-74025
08-Mar-05
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RLT9250G
Abstract: No abstract text available
Text: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at http://www.roithner.mcb.at RLT9250G TECHNICAL DATA High Power Infrared Laserdiode Structure: AlGaAs/GaAs quantum well Lasing wavelength: 915 nm typ., singlemode
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RLT9250G
RLT9250G
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Untitled
Abstract: No abstract text available
Text: ROITHNER LASERTECHNIK A-1040 VIENNA, SCHOENBRUNNER STRASSE 7, AUSTRIA TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44 office@roithner-laser.com www.roithner-laser.com RLT80810GS TECHNICAL DATA Infrared Laserdiode Structure: AlGaAs/GaAs Lasing wavelength: 808 nm typ., singlemode
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RLT80810GS
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RLT92100G
Abstract: 925nm V920
Text: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at http://www.roithner.mcb.at RLT92100G TECHNICAL DATA High Power Infrared Laserdiode Structure: AlGaAs/GaAs quantum well Lasing wavelength: 920 nm typ., singlemode
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RLT92100G
RLT92100G
925nm
V920
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840 nm GaAs
Abstract: RLT8410G ma4060
Text: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT8410G TECHNICAL DATA High Power Infrared Laserdiode NOTE! Structure: AlGaAs/GaAs Lasing wavelength: 840 nm typ.
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RLT8410G
840 nm GaAs
RLT8410G
ma4060
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laserdiode 820 nm
Abstract: RLT8230G
Text: ROITHNER LASERTECHNIK A-1040 VIENNA, SCHOENBRUNNER STRASSE 7, AUSTRIA TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44 office@roithner-laser.com www.roithner-laser.com RLT8230G TECHNICAL DATA High Power Infrared Laserdiode NOTE! Structure: AlGaAs/GaAs Lasing wavelength: 820 nm typ.
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RLT8230G
laserdiode 820 nm
RLT8230G
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TEMD1000
Abstract: TSMF1000 TSMF1020 TSMF1030 TSMF1040
Text: TSMF1000/1020/1030/1040 Vishay Semiconductors High Speed IR Emitting Diode in SMD Package Description TSMF1000 TSMF1000 series are high speed infrared emitting diodes in GaAlAs/GaAs/GaAlAs double hetero technology molded in clear SMD package with dome lens.
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TSMF1000/1020/1030/1040
TSMF1000
TSMF1000
TSMF1020
TSMF1030
TSMF1040
TEMD1000
D-74025
08-Mar-01
TEMD1000
TSMF1020
TSMF1030
TSMF1040
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Laser-Diode 808
Abstract: RLT80810G 808 nm 300 mW LD
Text: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT80810G TECHNICAL DATA High Power Infrared Laserdiode Structure: AlGaAs/GaAs Lasing wavelength: 808 +/- 3 nm typ., singlemode
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RLT80810G
Laser-Diode 808
RLT80810G
808 nm 300 mW LD
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TSML1000
Abstract: TSML1020 TSML1030 TSML1040
Text: TSML1000/1020/1030/1040 Vishay Semiconductors Extented Power IR Emitting Diode in SMD Package Description TSML10.0 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology molded in clear SMD package. This technology represents best performance for
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TSML1000/1020/1030/1040
TSML10
TSML1000
TSML1020
TSML1030
TSML1040
D-74025
TSML1000
TSML1020
TSML1030
TSML1040
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encoder 9985
Abstract: 9985 angular encoder 9985 encoder S 1040 smd TSML1000 TSML1020 TSML1030 TSML1040 9985, encoder
Text: TSML1000/1020/1030/1040 Vishay Telefunken Extented Power IR Emitting Diode in SMD Package Description TSML1000 TSML10.0 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology molded in clear SMD package This technology represents best performance for
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TSML1000/1020/1030/1040
TSML1000
TSML10
TSML1020
TSML1030
TSML1040
D-74025
28-Nov-00
encoder 9985
9985 angular encoder
9985 encoder
S 1040 smd
TSML1000
TSML1020
TSML1030
TSML1040
9985, encoder
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TEMD1000
Abstract: TSMF1000 TSMF1020 TSMF1030 TSMF1040
Text: TSMF1000/1020/1030/1040 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in SMD Package Description TSMF1000 TSMF1000 series are high speed infrared emitting diodes in GaAlAs/GaAs/GaAlAs double hetero technology DH molded in clear SMD package with dome
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TSMF1000/1020/1030/1040
TSMF1000
TSMF1000
TSMF1020
TSMF1030
TSMF1040
TEMD1000
D-74025
21-May-03
TEMD1000
TSMF1020
TSMF1030
TSMF1040
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100mw
Abstract: RLT67100G DSA0010917
Text: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at http://www.roithner.mcb.at RLT67100G TECHNICAL DATA High Power Visible Wavelength Laserdiode Structure: InGaAlP/GaAs, Aperture: 1 x 30 µm
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RLT67100G
100mW
100mw
RLT67100G
DSA0010917
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tsmf
Abstract: No abstract text available
Text: TSMF1000/1020/1030/1040 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in SMD Package TSMF1000 Description TSMF1000 series are high speed infrared emitting diodes in GaAlAs/GaAs/GaAlAs double hetero technology DH molded in clear SMD package with dome
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TSMF1000/1020/1030/1040
TSMF1000
TSMF1020
TSMF1030
TSMF1040
TEMD1000
D-74025
21-May-03
tsmf
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PDF
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Untitled
Abstract: No abstract text available
Text: TSML1000/1020/1030/1040 Vishay Telefunken Extented Power IR Emitting Diode in SMD Package Description TSML1000 TSML10.0 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology molded in clear SMD package This technology represents best performance for
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TSML1000/1020/1030/1040
TSML1000
TSML10
TSML1020
TSML1030
TSML1040
D-74025
08-Mar-01
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PDF
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Untitled
Abstract: No abstract text available
Text: TSMF1000/1020/1030/1040 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in SMD Package Description TSMF1000 TSMF1000 series are high speed infrared emitting diodes in GaAlAs/GaAs/GaAlAs double hetero technology DH molded in clear SMD package with dome
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TSMF1000/1020/1030/1040
TSMF1000
TSMF1000
TSMF1020
TSMF1030
TSMF1040
TEMD1000
D-74025
21-May-03
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840 nm GaAs
Abstract: RLT8350G NM12
Text: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at http://www.roithner.mcb.at RLT8350G TECHNICAL DATA High Power Infrared Laserdiode Structure: AlGaAs/GaAs quantum well, Aperture 3 x 1.5 µm²
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RLT8350G
840 nm GaAs
RLT8350G
NM12
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RLT68250G
Abstract: No abstract text available
Text: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at http://www.roithner.mcb.at RLT68250G TECHNICAL DATA High Power Visible Wavelength Laserdiode NOTE! Structure: AlGaInP/GaAs, Aperture: 1 x 50 µm
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RLT68250G
RLT68250G
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RLT7810G
Abstract: 780 laser diode laser diode 780 nm
Text: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at http://www.roithner.mcb.at RLT7810G TECHNICAL DATA High Power Infrared Laserdiode Structure: AlGaAs/GaAs quantum well, Aperture 3 x 1.5 µm
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RLT7810G
RLT7810G
780 laser diode
laser diode 780 nm
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