uv phototransistor
Abstract: 8602 rectifier photodiode ge uv photodiode, GaP TSAL6200 ga09 80086 "photoconductive" 1015
Text: VISHAY Vishay Semiconductors Physics and Technology Emitters www.vishay.com 1 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. Structure of the chip is displayed in figure 1. Al p - GaAs : Si n - GaAs : Si 94 8200
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uv phototransistor
8602 rectifier
photodiode ge
uv photodiode, GaP
TSAL6200
ga09
80086
"photoconductive" 1015
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hittite j
Abstract: Hydrogen GaAs 0.15 pHEMT mmic j PHILADELPHIA
Text: v00.0105 APPLICATION NOTES HYDROGEN EFFECTS ON GaAs pHEMT DEVICES Introduction: The effects of residual Hydrogen H2 on GaAs pHEMT devices in hermetically sealed packages are well documented by the GaAs MMIC community. This application note is intended to serve as an overview of this
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BPW-20R
Abstract: BPW20 large area quadrant photodiode BPV10NF BPV22NF BPW20R BPW34 BPW46 BPW97 S153P
Text: Vishay Telefunken Physics and Technology Emitters Materials vt vt 12.99 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 5. p - GaAs : Si Al n - GaAs : Si 94 8200
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uv phototransistor
Abstract: solar cell transistor infrared monocrystalline solar cell telefunken Dielectric Constant Silicon Nitride power density for monocrystalline solar cell External Quantum Efficiency solar 10MW BPW21R short distance measurement ir infrared diode Telefunken Phototransistor
Text: Vishay Telefunken Physics and Technology Emitters Materials vt vt 05.00 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 1. p - GaAs : Si Al n - GaAs : Si 94 8200
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TSAL6200
Abstract: pn junction diode structure phototransistor K-T TSAL6200 application circuit
Text: Vishay Semiconductors Physics and Technology Emitters Materials Document Number 80086 02-02 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 5. p - GaAs : Si Al n - GaAs : Si
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ttl cmos advantages disadvantages
Abstract: Motorola MC74HC4053 signal path designer Microwave Video Systems
Text: MGS Series Monolithic GaAs Switches Application Note G007 Introduction Monolithic GaAs switches provide a popular alternative to PIN diode or mechanical switches. They offer comparable performance, with the added advantages of smaller size and lower cost. Four
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MGS-70018
MGS-70008
MGS-71018
MGS-71008
MGS-70018,
MGS-71018,
MGS-70008,
MGS71008
MGS-70008/MGS-71008
ttl cmos advantages disadvantages
Motorola MC74HC4053
signal path designer
Microwave Video Systems
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NE70083
Abstract: NE372 planar transformer theory small signal GaAs FET x-band microwave fet NE71083 DLI-1988-1
Text: California Eastern Laboratories AN-PF-1007 APPLICATION NOTE Designing High Power GaAs FET Amplifiers Using Single Cell FET Parameters INTRODUCTION Many different power GaAs FET die types are available from NEC. With the recent development of the NE430, NE345L,
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AN-PF-1007
NE430,
NE345L,
NE372
NE70083
planar transformer theory
small signal GaAs FET
x-band microwave fet
NE71083
DLI-1988-1
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NE70083
Abstract: NE372800 AN83901 NE372 NE71083 Matching Transformer - line matching transformed AN-PF-1007
Text: California Eastern Laboratories AN-PF-1007 APPLICATION NOTE Designing High Power GaAs FET Amplifiers Using Single Cell FET Parameters INTRODUCTION Many different power GaAs FET die types are available from NEC. With the recent development of the NE430, NE345L,
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NE430,
NE345L,
NE372
24-Hour
NE70083
NE372800
AN83901
NE71083
Matching Transformer - line matching transformed
AN-PF-1007
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Untitled
Abstract: No abstract text available
Text: TSML3710 VISHAY Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSML3710 is an infrared emitting diode in GaAlAs on GaAs technology in miniature PLCC-2 SMD package. Features • SMT IRED with extra high radiant power
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TSML3710
TEMT3700
2002/95/EC
2002/96/Eded
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: V3711P Vishay Semiconductors GaAs Infrared Emitting Diode in SMT Package Description V3711P is a standard GaAs infrared emitting diode in a miniature PLCC-2 package. Wide aperture and flat window enables easy design of external optics. Features • High radiant power
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V3711P
08-Apr-05
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TEMT3700
Abstract: TSML3710
Text: TSML3710 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSML3710 is an infrared emitting diode in GaAlAs on GaAs technology in miniature PLCC-2 SMD package. Features • • • • • SMT IRED with extra high radiant power
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TSML3710
TEMT3700
2002/95/EC
2002/96/EC
D-74025
08-Mar-05
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Untitled
Abstract: No abstract text available
Text: TSML3710 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSML3710 is an infrared emitting diode in GaAlAs on GaAs technology in miniature PLCC-2 SMD package. Features • • • • • SMT IRED with extra high radiant power
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TSML3710
TEMT3700
2002/95/EC
2002/96/EC
08-Apr-05
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TSML3710-GS08
Abstract: TEMT3700 TSML3710 diode 178 tfk tfk Phototransistor
Text: TSML3710 Vishay Semiconductors GaAs/GaAlAs Infrared Emitting Diode in SMT Package Description TSML3710 is an infrared emitting diode in GaAlAs on GaAs technology in miniature PL–CC–2 SMD package. Features D SMT IRED with extra high radiant power D Low forward voltage
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TSML3710
TEMT3700
D-74025
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TEMT3700
diode 178 tfk
tfk Phototransistor
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TFK 450
Abstract: diode 178 tfk IR diodes TFK 4 tfk 540 TFK diodes tfk Phototransistor TEMT3700 TSML3710 TSML3710-GS08
Text: TSML3710 VISHAY Vishay Semiconductors GaAs/GaAlAs Infrared Emitting Diode in SMT Package Description TSML3710 is an infrared emitting diode in GaAlAs on GaAs technology in miniature PLCC2 SMD package. Features • • • • • SMT IRED with extra high radiant power
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TSML3710
TEMT3700
D-74025
06-Jun-03
TFK 450
diode 178 tfk
IR diodes TFK 4
tfk 540
TFK diodes
tfk Phototransistor
TSML3710-GS08
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Untitled
Abstract: No abstract text available
Text: TSML3710 VISHAY Vishay Semiconductors GaAs/GaAlAs Infrared Emitting Diode in SMT Package Description TSML3710 is an infrared emitting diode in GaAlAs on GaAs technology in miniature PLCC2 SMD package. Features • • • • • SMT IRED with extra high radiant power
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TEMT3700
D-74025
06-May-04
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BPW21R
Abstract: emitter "1060 nm" RECTIFIER 8212 near IR photodiodes with daylight filter photodiode application luxmeter osram Phototransistor 7.6 v AXIAL INCANDESCENT equivalent of transistor 80113 Tungsten power density for monocrystalline solar cell
Text: Vishay Semiconductors Physics and Technology Emitters Materials Document Number 80113 02-02 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 62. p - GaAs : Si Al
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Abstract: No abstract text available
Text: Effects of Deposition Method of PECVD Silicon Nitride as MIM Capacitor Dielectric for GaAs HBT Technology Jiro Yota GaAs Technology, Skyworks Solutions, Inc. 2427 W. Hillcrest Drive, Newbury Park, CA 91320, USA jiro.yota@skyworksinc.com Thin silicon nitride Si3N4 films deposited using plasma-enhanced
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TEMT3700
Abstract: TSML3710
Text: TSML3710 VISHAY Vishay Semiconductors GaAs/GaAlAs Infrared Emitting Diode in SMT Package Description TSML3710 is an infrared emitting diode in GaAlAs on GaAs technology in miniature PLCC-2 SMD package. Features • • • • • SMT IRED with extra high radiant power
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TSML3710
TEMT3700
D-74025
03-Jun-04
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SKY13321-360LF: 0.1-3.0 GHz GaAs SPDT Switch Applications Description • Higher power applications with excellent linearity performance • WiMAX systems The SKY13321-360LF is a pHEMT GaAs FET I/C switch. The switch may be used in transmit/receive applications by
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SKY13321-360LF
01072A
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201098D
Abstract: S1537 s1538 S1540 S1539
Text: DATA SHEET SKY13322-375LF: 20 MHz-6.0 GHz GaAs SP4T Switch Applications Description • Multiband telecommunications up to 6 GHz The SKY13322-375LF is a GaAs FET I/C single-pole, four-throw SP4T switch. This general purpose switch is an ideal choice for
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SKY13322-375LF:
SKY13322-375LF
10-pin,
J-STD-020)
10-pin
201098D
201098D
S1537
s1538
S1540
S1539
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SKY13322-375LF: 20 MHz-6.0 GHz GaAs SP4T Switch Applications Description • Multiband telecommunications up to 6 GHz The SKY13322-375LF is a GaAs FET I/C single-pole, four-throw SP4T switch. This general purpose switch is an ideal choice for
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SKY13322-375LF:
SKY13322-375LF
10-pin,
J-STD-020)
10-pin
201098D
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TSHA 5502
Abstract: TSHA5502 Transistor 5503 TSHA550 TSHA5500 TSHA5501 TSHA5503
Text: TSHA550. Vishay Telefunken GaAlAs Infrared Emitting Diodes in ø 5 mm T–1¾ Package Description 94 8390 The TSHA550. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs
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D-74025
20-May-99
TSHA 5502
TSHA5502
Transistor 5503
TSHA550
TSHA5500
TSHA5501
TSHA5503
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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Ir photodiodes
Abstract: No abstract text available
Text: TSHA520. Vishay Telefunken ¾ GaAlAs Infrared Emitting Diodes in ø 5 mm T–1 Package Description 94 8390 The TSHA520. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs
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D-74025
20-May-99
Ir photodiodes
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