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    GAAS FET MICRO-X PACKAGE MARKING Search Results

    GAAS FET MICRO-X PACKAGE MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH9R00CQ5 Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH1R306PL Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPHR8504PL Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HNFDBFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP100-1414-0.50-002 Visit Toshiba Electronic Devices & Storage Corporation

    GAAS FET MICRO-X PACKAGE MARKING Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    rogers* RO4003C

    Abstract: mgf1941 gaas fet micro-X Package marking 137 marking Micro-X MGF1941AL gaas fet micro-X GD-32 gaas fet micro-X Package gaas fet marking J r338
    Text: < Power GaAs FET > MGF1941AL Micro-X type plastic package DESCRIPTION The MGF1941AL power MES FET is designed for use in S to Ku band power amplifiers. Outline Drawing FEATURES High gain and High P1dB P1dB=15dBm, Glp=10 dB Typ. @ f=12GHz APPLICATION Fig.1


    Original     		MGF1941AL MGF1941AL 15dBm, 12GHz 000pcs/reel rogers* RO4003C mgf1941 gaas fet micro-X Package marking 137 marking Micro-X gaas fet micro-X GD-32 gaas fet micro-X Package gaas fet marking J r338 PDF

    gaas fet marking J

    Abstract: No abstract text available
    Text: < Power GaAs FET > MGF1941AL Micro-X type plastic package DESCRIPTION The MGF1941AL power MES FET is designed for use in S to Ku band power amplifiers. Outline Drawing FEATURES High gain and High P1dB P1dB=15dBm, Glp=10 dB Typ. @ f=12GHz APPLICATION Fig.1


    Original     		MGF1941AL MGF1941AL 15dBm, 12GHz 000pcs/reel gaas fet marking J PDF

    gaas fet micro-X Package marking

    Abstract: gaas fet micro-X Package gaas fet marking gaas fet micro-X micro-X ceramic Package marking 133 micro-x 133 marking Micro-X
    Text: < Power GaAs FET > MGF1451A Micro-X ceramic package DESCRIPTION The MGF1451A power GaAs MES FETis designed for use in S to Ku band amplifiers. Outline Drawing FEATURES High gain and High P1dB Glp=10.5dB , P1dB=13dBm Typ. @ f=12GHz APPLICATION Fig.1 S to Ku band low noise amplifiers


    Original     		MGF1451A MGF1451A 13dBm 12GHz gaas fet micro-X Package marking gaas fet micro-X Package gaas fet marking gaas fet micro-X micro-X ceramic Package marking 133 micro-x 133 marking Micro-X PDF

    UPG2117K

    Abstract: UPG2118K J FET RF Cascode Input upg2118
    Text: NEC's VERSATILE 3V GSM UPG2117K GaAs MMIC POWER AMPLIFIER FEATURES DESCRIPTION • E-MODE HJ-FET TECHNOLOGY/SINGLE POSITIVE SUPPLY VOLTAGE • LOW VOLTAGE OPERATION: VDD = +3.2 V • HIGH EFFICIENCY: PAE = 57% TYP • 20 PIN 4 X 4 MM SQUARE MICRO LEAD PACKAGE


    Original     		UPG2117K UPG2117K 10deg UPG2117K-E3 20-pin UPG2118K J FET RF Cascode Input upg2118 PDF

    NE3517S03

    Abstract: rt/duroid 5880 RT DUROID 5880 NE3517S03-A marking t1c rogers 5880 HS350 NE3517S03-T1D-A NE3517S03-T1C rt duroid
    Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3517S03 K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET FEATURES • Super low noise figure, high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • K-band Micro-X plastic S03 package APPLICATIONS


    Original     		NE3517S03 NE3517S03-T1C NE3517S03-T1C-A NE3517S03-T1D NE3517S03-T1D-A NE3517S03 rt/duroid 5880 RT DUROID 5880 NE3517S03-A marking t1c rogers 5880 HS350 NE3517S03-T1D-A NE3517S03-T1C rt duroid PDF

    NE3517S03-A

    Abstract: NE3517S03-T1C NE3517S03 HS350
    Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3517S03 K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET FEATURES • Super low noise figure, high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • K-band Micro-X plastic S03 package APPLICATIONS


    Original     		NE3517S03 NE3517S03-T1C NE3517S03-T1D NE3517S03-T1C-A NE3517S03-T1D-A NE3517S03-A PG10787EJ01V0DS NE3517S03-A NE3517S03 HS350 PDF

    NE3520S03

    Abstract: nE352
    Text: Data Sheet NE3520S03 R09DS0029EJ0100 Rev.1.00 Oct 18, 2011 N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain FEATURES • Low noise figure and high associated gain: NF = 0.65 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz, VDS = 2 V, ID = 10 mA • K band Micro-X plastic S03 package


    Original     		NE3520S03 R09DS0029EJ0100 NE3520S03-T1C NE3520S03-T1C-A NE3520S03-T1D NE3520S03-T1D-A NE3520S03 nE352 PDF

    siemens spc 2

    Abstract: SIEMENS MICROWAVE RADIO SIEMENS MICROWAVE RADIO 8 GHz microwave transistor siemens MSC Microwave x-band mmic lna "Microwave Diodes" Microwave GaAs FET micro x MMIC Amplifier Micro-X marking D CFY67
    Text: HiRel Discrete and HiRel Microwave Semiconductors 1. Preliminary Remarks This Paragraph gives an overview on the HiRel Small Signal Microwave Semiconductors available from Siemens. Full data sheets are also given in our HiRel Discrete and Microwave Semiconductors Data Book which is currently under generation August 1998 . They are


    Original     		de/semiconductor/products/35/35 de/semiconductor/products/35/353 MWP-25 MWP-35 siemens spc 2 SIEMENS MICROWAVE RADIO SIEMENS MICROWAVE RADIO 8 GHz microwave transistor siemens MSC Microwave x-band mmic lna "Microwave Diodes" Microwave GaAs FET micro x MMIC Amplifier Micro-X marking D CFY67 PDF

    gaas fet marking A

    Abstract: No abstract text available
    Text: RF3147 TRI-BAND GSM900/DCS/PCS POWER AMP MODULE RoHS Compliant & Pb-Free Product Typical Applications • 3V Tri-Band GSM Handsets • EGSM900/DCS/PCS Products • Commercial and Consumer Systems • GPRS Class 12 Compatible • Portable Battery-Powered Equipment


    Original     		RF3147 RF3147 EGSM900, 880MHz 915MHz, 1710MHz 1785MHz 1850MHz 1910MHz gaas fet marking A PDF

    Untitled

    Abstract: No abstract text available
    Text: RF3147 TRI-BAND GSM900/DCS/PCS POWER AMP MODULE RoHS Compliant & Pb-Free Product Typical Applications • 3V Tri-Band GSM Handsets • EGSM900/DCS/PCS Products • Commercial and Consumer Systems • GPRS Class 12 Compatible • Portable Battery-Powered Equipment


    Original     		RF3147 GSM900/DCS/PCS EGSM900/DCS/PCS 48-Pin, 203mm 330mm 025mm PDF

    RF3147

    Abstract: K3534
    Text: RF3147 TRI-BAND GSM900/DCS/PCS POWER AMP MODULE RoHS Compliant & Pb-Free Product Typical Applications • 3V Tri-Band GSM Handsets • EGSM900/DCS/PCS Products • Commercial and Consumer Systems • GPRS Class 12 Compatible • Portable Battery-Powered Equipment


    Original     		RF3147 RF3147 EGSM900, 880MHz 915MHz, 1710MHz 1785MHz 1850MHz 1910MHz K3534 PDF

    EGSM900

    Abstract: GSM900 RF3166ASMPCBA-410 RF3166PCBA-410
    Text: RF3166 QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE RoHS Compliant & Pb-Free Product Typical Applications • 3V Quad-Band GSM Handsets • GSM850/EGSM900/DCS/PCS Products • Commercial and Consumer Systems • GPRS Class 12 • Portable Battery-Powered Equipment


    Original     		RF3166 GSM850/GSM900/DCS/PCS GSM850/EGSM900/DCS/PCS RF3166 GSM850, EGSM900, 824MHz 849MHzreate 203mm 330mm EGSM900 GSM900 RF3166ASMPCBA-410 RF3166PCBA-410 PDF

    RF2418

    Abstract: SOIC-14
    Text: RF2418 LOW CURRENT LNA/MIXER RoHS Compliant & Pb-Free Product Typical Applications • UHF Digital and Analog Receivers • Commercial and Consumer Systems • Digital Communication Systems • 433MHz and 915MHz ISM Band Receivers • Spread-Spectrum Communication Systems • General Purpose Frequency Conversion


    Original     		RF2418 433MHz 915MHz RF2418 850MHz SOIC-14 PDF

    DCS Basic Notes

    Abstract: DCS1800 EGSM900 GSM900 PCS1900 RF5146 RF5146PCBA-41X
    Text: RF5146 QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE RoHS Compliant & Pb-Free Product Typical Applications • 3V Quad-Band GSM Handsets • GSM850/EGSM900/DCS/PCS Products • Commercial and Consumer Systems • GPRS Class 12 Compatible • Portable Battery-Powered Equipment


    Original     		RF5146 GSM850/GSM900/DCS/PCS GSM850/EGSM900/DCS/PCS RF5146 GSM850, EGSM900, 203mm 330mm 025mm DCS Basic Notes DCS1800 EGSM900 GSM900 PCS1900 RF5146PCBA-41X PDF

    SPICE model for UC3844

    Abstract: UC3843 spice model tl494 spice model EB407 Basic Halogen Converter MTP2N10 180V - 240V igbt dimmer UC3845 pspice model mosfet cross reference spice model moc3061 uc3843 flyback supply opto-coupler
    Text: BR1522/D Rev. 2, Aug-2000 Technical Literature Selector Guide and Cross Reference ON Semiconductor A Listing and Cross Reference of Available Technical Literature from ON Semiconductor ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		BR1522/D Aug-2000 r14525 BR1522/D SPICE model for UC3844 UC3843 spice model tl494 spice model EB407 Basic Halogen Converter MTP2N10 180V - 240V igbt dimmer UC3845 pspice model mosfet cross reference spice model moc3061 uc3843 flyback supply opto-coupler PDF

    Untitled

    Abstract: No abstract text available
    Text: RF3158 QUAD-BAND GSM/EDGE/GSM850/DCS/PCS POWER AMPLIFIER MODULE RoHS Compliant & Pb-Free Product Package Style: Module 6mmx6mm Features „ „ „ „ „ „ „ „ Linear EDGE and GSM Operation PowerStar GSM/GPRS Power Control Digital Band Select Enables a


    Original     		RF3158 GSM/EDGE/GSM850/DCS/PCS GSM850/EGSM900/DCS/PC 2002/95/EC 2005/747/EC. DS061212 PDF

    Untitled

    Abstract: No abstract text available
    Text: RF3158 QUAD-BAND GSM/EDGE/GSM850/DCS/PCS POWER AMPLIFIER MODULE RoHS Compliant & Pb-Free Product Typical Applications • Quad-Band GSM/EDGE Handsets • GSM850/EGSM900/DCS/PCS Products • GSM/EDGE Transmitter Line-ups • GPRS Class 12 Compatible Products


    Original     		RF3158 GSM/EDGE/GSM850/DCS/PCS GSM850/EGSM900/DCS/PCS RF3158 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SKY13319-374LF: 0.1-3.0 GHz GaAs SPDT Switch Applications • Two-way radios • WiMAX • WLANs Features • Broadband frequency range: 0.1-3.0 GHz • Low insertion loss: 0.4 dB @ 1 GHz • High isolation: 25 dB @ 1 GHz • High P0.1dB: +37 dBm @ 3.3 V


    Original     		SKY13319-374LF: SKY13319-374LF J-STD-020) 201096D PDF

    201097E

    Abstract: No abstract text available
    Text: DATA SHEET SKY13320-374LF: 0.1-6.0 GHz GaAs SPDT Switch Applications • Two-way radios • WiMAX • WLANs Features • Broadband frequency range: 0.1 to 6.0 GHz • Low insertion loss: 0.5 dB @ 2.4 GHz • High isolation: 28 dB @ 0.9 GHz • High P0.1dB: +33 dBm @ 3.0 V


    Original     		SKY13320-374LF: J-STD-020) SKY13320-374LF 201097E 201097E PDF

    201096D

    Abstract: SKY13319-374LF 374LF MLPD 6 PIN PACKAGE
    Text: DATA SHEET SKY13319-374LF: 0.1-3.0 GHz GaAs SPDT Switch Applications • Two-way radios • WiMAX • WLANs Features • Broadband frequency range: 0.1-3.0 GHz • Low insertion loss: 0.4 dB @ 1 GHz • High isolation: 25 dB @ 1 GHz • High P0.1dB: +37 dBm @ 3.3 V


    Original     		SKY13319-374LF: J-STD-020) SKY13319-374LF 201096D 201096D 374LF MLPD 6 PIN PACKAGE PDF

    S1545

    Abstract: S1534 SKY13320-374LF
    Text: DATA SHEET SKY13320-374LF: 0.1-6.0 GHz GaAs SPDT Switch Applications J2 J1 x Two-way radios x WiMAX x WLANs Features x Broadband frequency range: 0.1-6.0 GHz x Low insertion loss: 0.5 dB @ 2.4 GHz x High isolation: 25 dB @ 1 GHz x High P0.1dB: +33 dBm @ 3.0 V


    Original     		SKY13320-374LF: J-STD-020) SKY13320-374LF 201097C S1545 S1534 PDF

    SKY13319-374LF

    Abstract: S1534 S1545
    Text: DATA SHEET SKY13319-374LF: 0.1-3.0 GHz GaAs SPDT Switch Applications J2 J1 x Two-way radios x WiMAX x WLANs Features x Broadband frequency range: 0.1-3.0 GHz x Low insertion loss: 0.4 dB @ 1 GHz x High isolation: 25 dB @ 1 GHz x High P0.1dB: +37 dBm @ 3.3 V


    Original     		SKY13319-374LF: J-STD-020) SKY13319-374LF 201096B S1534 S1545 PDF

    MLPD 6 PIN PACKAGE

    Abstract: SKY13350
    Text: DATA SHEET SKY13350-385LF: 0.01-6.0 GHz GaAs SPDT Switch Applications • WLAN 802.11 a/b/g networks • WLAN repeaters • ISM band radios • Low power transmit receive systems Features • Positive voltage control 0/1.8 V to 0/5.0 V • Broadband frequency range: 0.01 to 6.0 GHz


    Original     		SKY13350-385LF: J-STD-020) SKY13350-385LF 201174D MLPD 6 PIN PACKAGE SKY13350 PDF

    gaas fet micro-X Package marking

    Abstract: INFINEON DIODE BAS 70 infineon radar BFY420 GaAs Amplifier Micro-X Marking N
    Text: GaAs Components Infineon ?0í^nü!og¡«» HiRel Discretes and Microwave Semiconductors 11.1 Preliminary Remarks This Paragraph gives an overview on the HiRel Small Signal Microwave Semiconductors available from Infineon. Full data sheets are also given in our HiRel Discrete and


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