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    GAAS IC HIGH ISOLATION POSITIVE CONTROL SWITCH Search Results

    GAAS IC HIGH ISOLATION POSITIVE CONTROL SWITCH Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MYC0409-NA-EVM Murata Manufacturing Co Ltd 72W, Charge Pump Module, non-isolated DC/DC Converter, Evaluation board Visit Murata Manufacturing Co Ltd
    GRT155C81A475ME13D Murata Manufacturing Co Ltd AEC-Q200 Compliant Chip Multilayer Ceramic Capacitors for Infotainment Visit Murata Manufacturing Co Ltd
    GRT155C81A475ME13J Murata Manufacturing Co Ltd AEC-Q200 Compliant Chip Multilayer Ceramic Capacitors for Infotainment Visit Murata Manufacturing Co Ltd
    GRT155D70J475ME13D Murata Manufacturing Co Ltd AEC-Q200 Compliant Chip Multilayer Ceramic Capacitors for Infotainment Visit Murata Manufacturing Co Ltd
    GRT155D70J475ME13J Murata Manufacturing Co Ltd AEC-Q200 Compliant Chip Multilayer Ceramic Capacitors for Infotainment Visit Murata Manufacturing Co Ltd

    GAAS IC HIGH ISOLATION POSITIVE CONTROL SWITCH Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET AS165-59, AS165-59LF: GaAs IC High-Isolation SPST Switch Positive Control 0.7–2.5 GHz Features Pin Out Single positive control voltage 0, 5 V ● Base station synthesizer switch ● High isolation (45 dB @ 0.9, 1.9 GHz) ● J port nonreflective


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    AS165-59, AS165-59LF: J-STD-020 AS165-59 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET AS165-59, AS165-59LF: GaAs IC High Isolation SPST Switch Positive Control 0.7–2.5 GHz Features Pin Out Single positive control voltage 0, +5 V ● Base station synthesizer switch ● High isolation (45 dB @ 0.9, 1.9 GHz) ● J port non-reflective


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    AS165-59, AS165-59LF: J-STD-020 AS165-59 PDF

    AS118-12

    Abstract: No abstract text available
    Text: GaAs IC High Isolation Positive Control SPDT Switch DC–2.5 GHz AS118-12 Features SOIC-8 • Positive Control PIN 8 0.050 1.27 mm BSC ■ High Isolation (45 dB @ 0.9 GHz) ■ Low Insertion Loss (0.5 dB @ 0.9 GHz) Description The AS118-12 is a reflective SPDT FET IC switch. The


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    AS118-12 AS118-12 3/99A PDF

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    Abstract: No abstract text available
    Text: Preliminary GaAs IC High Isolation Positive Control SPDT Switch DC–3.0 GHz AS176-59 Features MSOP-8 • Positive Voltage Control 0/+3 to +5 V 0.0256 (0.65 mm) TYP. ■ High Isolation (50 dB @ 0.9, 1.9 GHz) 5 ■ Low DC Power Consumption PIN 1 INDICATOR


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    AS176-59 AS176-59 AS165-59 10/99A PDF

    AS165-59

    Abstract: AS177-86 MSOP-10 as177
    Text: Preliminary GaAs IC High Isolation Positive Control SPDT Switch DC–3.0 GHz AS177-86 Features • Positive Voltage Control 0/+3, +5 V ■ High Isolation (50 dB @ 0.9, 1.9 GHz) ■ Low DC Power Consumption ■ Ideal for GSM, PCS, 3G and ISM 2.4 GHz Applications


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    AS177-86 MSOP-10 AS177-86 MSOP-10 500MHz. 10/99A AS165-59 as177 PDF

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    Abstract: No abstract text available
    Text: GaAs IC High Isolation Positive Control SPDT Switch DC–2.5 GHz AS164-80 Features SSOP-16 • Positive Voltage Control 0.197 5.00 mm 0.189 (4.80 mm) 0.025 (0.635 mm) TYP. ■ High Isolation (50 dB @ 1.9 GHz) PIN 16 ■ Low DC Power Consumption 0.244 (6.20 mm)


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    AS164-80 SSOP-16 AS164-80 SSOP-16 AS165-59 10/00A PDF

    AS164-80

    Abstract: AS165-59
    Text: GaAs IC High Isolation SPST Switch Positive Control 0.7–2.5 GHz AS165-59 Features • Single Positive Control Voltage 0, +5 V ■ Base Station Synthesizer Switch ■ High Isolation (45 dB @ 0.9, 1.9 GHz) MSOP-8 0.0256 (0.65 mm) TYP. PIN 1 INDICATOR ■ J1 Port Non-Reflective


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    AS165-59 AS165-59 AS164-80 10/99A PDF

    AS123-12

    Abstract: AS148-24 SOIC-14
    Text: GaAs IC High Isolation Positive Control SPDT Switch DC–2.5 GHz AS148-24 Features SOIC-14 • Positive Voltage Control PIN 14 ■ High Isolation 50 dB @ 0.9 GHz and 1.9 GHz 0.050 (1.27 mm) BSC 0.050 (1.27 mm) 0.016 (0.40 mm) 0.244 (6.20 mm) 0.228 (5.80 mm)


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    AS148-24 SOIC-14 AS123-12 3/99A AS148-24 SOIC-14 PDF

    AS164-80

    Abstract: AS165-59
    Text: GaAs IC High Isolation SPST Switch Positive Control 0.7–2.5 GHz AS165-59 Features • Single Positive Control Voltage 0, +5 V ■ Base Station Synthesizer Switch ■ High Isolation (45 dB @ 0.9, 1.9 GHz) MSOP-8 0.0256 (0.65 mm) TYP. PIN 1 INDICATOR ■ J1 Port Non-Reflective


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    AS165-59 AS165-59 AS164-80 10/99A PDF

    Untitled

    Abstract: No abstract text available
    Text: GaAs 1C High Isolation SPST Switch Non-Reflective Positive Control 0.7-2.0 GHz EBAlpha AS121-12 Features SOIC-8 • Complementary Positive Control Voltages PIN 8 ■ 5 V Operation «— ■ Input and Output Non-Reflective PIN 1 IN D IC A TO R - ■ High Isolation 46 dB @ 0.9 GHz


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    AS121-12 AS121-12 3/98A PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET AS177-86, AS177-86LF: GaAs IC High-Isolation Positive Control SPDT Switch 300 kHz–3.0 GHz Features Pin Out Positive voltage control 0/3, 5 V ● High isolation (50 dB @ 0.9, 1.9 GHz) ● Low DC power consumption ● Ideal for GSM, PCS, 3G and ISM 2.4 GHz applications


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    AS177-86, AS177-86LF: MSOP-10 J-STD-020 500MHz. AS177-86 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET AS177-86, AS177-86LF: GaAs IC High-Isolation Positive Control SPDT Switch 300 kHz–3.0 GHz Features Pin Out Positive voltage control 0/3, 5 V ● High isolation (50 dB @ 0.9, 1.9 GHz) ● Low DC power consumption ● Ideal for GSM, PCS, 3G and ISM 2.4 GHz applications


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    AS177-86, AS177-86LF: MSOP-10 J-STD-020 500MHz. AS177-86 PDF

    AS186-302

    Abstract: No abstract text available
    Text: GaAs IC High Isolation Positive Control SPDT Non-Reflective Switch DC–4.0 GHz AS186-302 Features • Positive Voltage Control 0/+3 to 0/+5 V ■ High Isolation (55 dB @ 0.9 GHz and 1.9 GHz) MSOP-8 Exposed Pad 0.122 (3.09 mm) 0.114 (2.89 mm) 8 ■ Miniature MSOP-8 Exposed Pad Package


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    AS186-302 AS186-302 2/00A PDF

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    Abstract: No abstract text available
    Text: GaAs IC High Isolation Positive Control SPDT Non-Reflective Switch DC–4.0 GHz AS186-302 Features • Positive Voltage Control 0/+3 to 0/+5 V ■ High Isolation (55 dB @ 0.9 GHz and 1.9 GHz) MSOP-8 Exposed Pad 0.122 (3.09 mm) 0.114 (2.89 mm) 8 ■ Miniature MSOP-8 Exposed Pad Package


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    AS186-302 AS186-302 2/00A PDF

    AS186-302LF

    Abstract: No abstract text available
    Text: DATA SHEET AS186-302, AS186-302LF: GaAs IC High Isolation Positive Control SPDT Non-Reflective Switch DC–4.0 GHz Applications ● Pin Out 6 GND CBL J3 5 GND 50 4 Positive voltage control 0/+3 to 0/+5 V ● High isolation (55 dB @ 0.9 GHz and 1.9 GHz) ● Miniature MSOP-8 exposed pad package


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    AS186-302, AS186-302LF: J-STD-020 AS186-302 AS186-302LF PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET AS186-302, AS186-302LF: GaAs IC High-Isolation Positive Control SPDT Nonreflective Switch DC–4 GHz Applications ● Pin Out 6 GND CBL J3 5 GND 50 4 Positive voltage control 0/3 to 0/5 V ● High isolation (55 dB @ 0.9 GHz and 1.9 GHz) ● Miniature MSOP-8 exposed pad package


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    AS186-302, AS186-302LF: J-STD-020 AS186-302 PDF

    AS186-302

    Abstract: AS186-302LF
    Text: DATA SHEET AS186-302, AS186-302LF: GaAs IC High-Isolation Positive Control SPDT Nonreflective Switch LF–4 GHz Applications ● Pin Out 6 GND CBL J3 5 GND 50 4 Positive voltage control 0/3 to 0/5 V ● High isolation (55 dB @ 0.9 GHz and 1.9 GHz) ● Miniature MSOP-8 exposed pad package


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    AS186-302, AS186-302LF: J-STD-020 AS186-302 AS186-302LF PDF

    Untitled

    Abstract: No abstract text available
    Text: GaAs 1C High Isolation Positive Control SPDT Switch DC-2.5 GHz ESAlpha A S 118-12 Features SOIC-8 • Positive Control PIN 8 ■ High Isolation 45 dB @ 0.9 GHz 0.050 (1.27 mm) BSC ÌL flJLil ■ Low Insertion Loss (0.5 dB @ 0.9 GHz) Description The A S 118-12 is a reflective SPDT FET IC switch. The


    OCR Scan
    3/98A PDF

    AS121-12

    Abstract: No abstract text available
    Text: GaAs IC High Isolation SPST Switch Non-Reflective Positive Control 0.7–2 GHz AS121-12 Features SOIC-8 • Complementary Positive Control Voltages PIN 8 0.050 1.27 mm BSC ■ 5 V Operation ■ Input and Output Non-Reflective 0.244 (6.20 mm) 0.228 (5.80 mm)


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    AS121-12 AS121-12 3/99A PDF

    AWS5501-S13

    Abstract: S501
    Text: AWS5501-S13 A GaAs IC High Power Positive Control SPDT Reflective Switch DC-3 GHz Advanced Product Information Rev. 0 FEATURES • High Linearity IP3 55 dBm @ 1.9 GHz • High Isolation (30 dB @ 1.9 GHz) • Low Insertion Loss (0.55 dB @ 1.9 GHz) • Positive 3V to 5V Control Voltage


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    AWS5501-S13 AWS5501 AWS5501-S13 S501 PDF

    AS004S2-11

    Abstract: MV2112
    Text: GaAs IC SPDT Switch Non-Reflective Positive Control DC–4 GHz AS004S2-11 Features -11 • Positive Control Voltage ORIENTATION MARK ■ High Isolation, Non-Reflective ■ 8 Lead Hermetic Surface Mount Package 0.180 4.57 mm SQ. MAX. 0.150 (3.81 mm) ■ Capable of Meeting MIL-STD


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    AS004S2-11 AS004S2-11 MIL-STD-883 9/01A MV2112 PDF

    AS278-12

    Abstract: No abstract text available
    Text: GaAs IC High Power Positive Control SPDT Switch DC–3 GHz AS278-12 Features • High Linearity IP3 55 dBm @ 1.9 GHz SOIC-8 PIN 8 0.050 (1.27 mm) BSC ■ High Isolation (30 dB @ 1.9 GHz) ■ Low Insertion Loss (0.55 dB @ 1.9 GHz) ■ Positive 3 V to 5 V Control Voltage


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    AS278-12 AS278-12 10/99A PDF

    Untitled

    Abstract: No abstract text available
    Text: 11*j:£§ •i'x/ GaAs 1C High Isolation Positive Control SPDT Switch DC-3.0 GHz ESAlpha A S 1 76-59 Features MSOP-8 Positive Voltage Control 0/+3 to +5 V ■ High Isolation (50 dB @ 0.9, 1.9 GHz)5 J P IN 1 IN D IC A T O R 0 .1 1 8 (3 .0 0 m m ) Low DC Power Consumption


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    AS176-59 AS165-59 10/99A PDF

    Untitled

    Abstract: No abstract text available
    Text: CXG1009TN High Isolation SPDT Switch Description The CXG1009TN is a high Isolation SPDT Single Pole Dual Throw switch MMIC for personal communication, cable TV and so on. This IC is designed using the Sony’s GaAs J-FET process and operates at a single positive control


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    CXG1009TN CXG1009TN 10pin TSSOP-10P-L01 PDF