TG2205F
Abstract: No abstract text available
Text: TG2205F TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2205F RF SPDT Switch Application: PHS Features Low insertion loss: LOSS = 0.5dB (typ.) Hight isolation: ISL = 25dB (typ.) Control voltage: 0 V/3 V Pin Assignment (top view) Marking Weight: 0.014 g (typ.)
|
Original
|
TG2205F
000707EBC2
TG2205F
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Opto Semiconductors 3.0 2.6 2.3 2.1 SFH 4200 SFH 4205 fpl06724 Schnelle GaAs-IR-Lumineszenzdiode 950 nm High-Speed GaAs Infrared Emitter (950 nm) 2.1 1.7 0.9 0.7 1.1 0.5 3.7 3.3 3.4 3.0 2.4 0.1 (typ) 0.8 0.6 Cathode/Collector marking 0.18 0.6 0.12 0.4 Cathode/Collector
|
Original
|
fpl06724
fpl06867
OHF00784
OHL01660
|
PDF
|
TG2202F
Abstract: DSA003632
Text: TG2202F TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2202F 1.9 GHz Band Attenuator PHS Digital Cordless Telephone Features Attenuation: ATT = 22dB (typ.) Control voltage: 0 V/3 V Pin Assignment (top view) Marking Weight: 0.014 g (typ.) Maximum Ratings (Ta = 25°C)
|
Original
|
TG2202F
000707EAC2
TG2202F
DSA003632
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor, Inc. Product Preview MRFIC1870PP/D Rev. 0, 02/2003 MRFIC1870 3.2 V DCS/PCS GaAs Integrated Power Amplifier Freescale Semiconductor, Inc. Package Information Plastic Package Case 1308 QFN-20 Ordering Information Device Device Marking
|
Original
|
MRFIC1870PP/D
MRFIC1870
QFN-20)
QFN-20
MRFIC1870
QFN-20
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor, Inc. Technical Data MRFIC0970/D Rev. 0, 07/2002 MRFIC0970 3.2 V GSM GaAs Integrated Power Amplifier Scale 2:1 Freescale Semiconductor, Inc. Package Information Plastic Package Case 1308 (QFN-20) Ordering Information Device Marking
|
Original
|
MRFIC0970/D
MRFIC0970
QFN-20)
QFN-20
MRFIC0970
GSM900
QFN-20
|
PDF
|
smd MARKING CODE G72
Abstract: No abstract text available
Text: GaAs MMIC CGY 93P Data Sheet • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped Package
|
Original
|
MW-16
Q62702-G72
GPW05969
smd MARKING CODE G72
|
PDF
|
93 ab chip
Abstract: No abstract text available
Text: GaAs MMIC CGY 93 Data Sheet • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped Package CGY 93
|
Original
|
MW-16
GPW05969
93 ab chip
|
PDF
|
GSO05553
Abstract: Q62702-G117 CFH77 HEMT marking P
Text: GaAs HEMT CFH 77 Target Data Sheet • • • • Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! MW-4 Type Marking Ordering Code
|
Original
|
Q62702-G117
GSO05553
GSO05553
Q62702-G117
CFH77
HEMT marking P
|
PDF
|
GSO05553
Abstract: Q62702-F1393 Q62702-F1394 smd 3520 CFY 35-23 GaAs FET cfy 14 CFY 19 CFY 65
Text: GaAs FET CFY 35 Data Sheet • • • • Low noise High gain For low-noise front end amplifiers For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel CFY 35-20 NA Q62702-F1393
|
Original
|
Q62702-F1393
Q62702-F1394
GSO05553
GSO05553
Q62702-F1393
Q62702-F1394
smd 3520
CFY 35-23
GaAs FET cfy 14
CFY 19
CFY 65
|
PDF
|
mmic amplifier marking code N3
Abstract: MWRA MMIC marking code R 20 A BJT HEMT marking P
Text: NBB-300 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz Package Style: Micro-X, 4-Pin, Ceramic Features GND 4 Reliable, Low-Cost HBT Design 12.0dB Gain, +13.8dBm P1dB@2GHz MARKING - N3 High P1dB of +14.3dBm@6.0GHz and +11.2dBm@14.0GHz
|
Original
|
NBB-300
12GHz
NBB-300
2002/95/EC
NBB-300-T1
NBB-300-D
NBB-300-E
DS120130
mmic amplifier marking code N3
MWRA
MMIC marking code R
20 A BJT
HEMT marking P
|
PDF
|
GaAs FET cfy 19
Abstract: CFY 35-20 F1393 f1394 GSO05553 Q62702-F1393 Q62702-F1394 smd code marking 814 cfy 19
Text: GaAs FET CFY 35 Data Sheet • • • • Low noise High gain For low-noise front end amplifiers For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel CFY 35-20 NA Q62702-F1393
|
Original
|
Q62702-F1394
Q62702-F1393
GSO05553
GaAs FET cfy 19
CFY 35-20
F1393
f1394
GSO05553
Q62702-F1393
Q62702-F1394
smd code marking 814
cfy 19
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NBB-300 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz Package Style: Micro-X, 4-Pin, Ceramic Features Reliable, Low-Cost HBT Design 12.0dB Gain, +13.8dBm P1dB@2GHz High P1dB of +14.3dBm@6.0GHz and +11.2dBm@14.0GHz GND 4 MARKING - N3 RF IN 1
|
Original
|
NBB-300
12GHz
2002/95/EC
NBB-300-T1
NBB-300-D
NBB-300-E
NBB-300
DS120130
|
PDF
|
Amplifier Micro-X "marking code" D
Abstract: mmic amplifier marking code N3
Text: NBB-300 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz RoHS Compliant & Pb-Free Product Package Style: Micro-X, 4-Pin, Ceramic Features GND 4 Reliable, Low-Cost HBT Design 12.0dB Gain, +13.8dBm P1dB@2GHz MARKING - N3 High P1dB of +14.3dBm@6.0GHz and
|
Original
|
NBB-300
12GHz
NBB-300
2002/95/EC
NBB-300-T1
NBB-300-D
NBB-300-E
DS080124
Amplifier Micro-X "marking code" D
mmic amplifier marking code N3
|
PDF
|
Amplifier Micro-X "marking code" D
Abstract: mmic amplifier marking code N3 NBB-300
Text: NBB-300 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz RoHS Compliant & Pb-Free Product Package Style: Micro-X, 4-Pin, Ceramic Features GND 4 Reliable, Low-Cost HBT Design 12.0dB Gain, +13.8dBm P1dB@2GHz MARKING - N3 High P1dB of +14.3dBm@6.0GHz and
|
Original
|
NBB-300
12GHz
NBB-300
DS070328
NBB-300-T1
NBB-300-D
NBB-300-E
Amplifier Micro-X "marking code" D
mmic amplifier marking code N3
|
PDF
|
|
|
gaas fet marking B
Abstract: gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet micro-X Package gaas fet marking J MGF1964A MGF1963A Micro-X marking "K"
Text: Marking manner of MITSUBISHI GaAs FET QL-1104E-A July/2008 [Leadless ceramic package] GD-26, 27 Terminal position (from Top View) Top View ① ② B 0 1AL B 0 1AL Electrodes direction: ① Gate ② Source ③ Drain ② ③ ① ② ③ Drain Gate Source
|
Original
|
QL-1104E-A
July/2008)
GD-26,
MGF4951A/52A
MGF4953A/54A
MGF1951A
MGF1952A
MGF1953A
MGF1954A
MGF4851A
gaas fet marking B
gaas fet micro-X Package marking
gaas fet marking a
marking K gaas fet
MGF1961A
gaas fet micro-X Package
gaas fet marking J
MGF1964A
MGF1963A
Micro-X marking "K"
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS GaAs-IR-Lumineszenzdiode in SMT-Gehäuse GaAs Infrared Emitter in SMT Package S ho 2.1 1.7 0.1 typ SFH 420 SFH 425 CL 0.9 0.7 •y0.\8my J Cathode/Colledor marking 0.12 / m|0.6 0.4 Cathode/Colledor Approx. weight 0.03 g Collector/Cathode marking
|
OCR Scan
|
I03ff.
169ff.
|
PDF
|
TG2202F
Abstract: No abstract text available
Text: TOSHIBA TG2202F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT GaAs MONOLITHIC TG2202F 1.9GHz BAND ATTENUATOR PHS DIGITAL CORDLESS TELEPHONE FEATURES • ATTENUATION : ATT = 22dB (Typ.) • CONTROL VOLTAGE : 0V/3V PIN CONNECTION (TOP VIEW) VC2 OUT MARKING GND Type name
|
OCR Scan
|
TG2202F
961001EBC1
907GHz
TG2202F
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA TG2202F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT GaAs MONOLITHIC TG2202F 1.9G H z BAND ATTENUATO R PHS DIGITAL CORDLESS TELEPHONE FEATURES • ATTENUATION : ATT = 22dB (Typ.) • CONTROL VOLTAGE : 0 V /3 V PIN CONNECTION (TOP VIEW) VC2 OUT MARKING
|
OCR Scan
|
TG2202F
961001EBC1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TO SH IBA TG2202F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT GaAs MONOLITHIC TG2202F 1.9 GHz BAND ATTENUATOR PHS DIGITAL CORDLESS TELEPHONE FEATURES • ATTENUATION : ATT = 22 dB (Typ.) • CONTROL VOLTAGE : 0 V / 3 V PIN CONNECTION (TOP VIEW) V C2 OUT MARKING
|
OCR Scan
|
TG2202F
0910EBC1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA TG2200F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT GaAs MONOLITHIC TG2200F 1.9GHz BAND ANTENNA SWITCH PHS DIGITAL CORDLESS TELEPHONE FEATURES • CONTROL VOLTAGE : 0V/3V PIN CONNECTION (TOP V IEW ) VC i R F 1 (RX) MARKING G N D RFcom (A N T ) Type nam e
|
OCR Scan
|
TG2200F
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS CGY 93P GaAs MMIC Preliminary Data • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code taped
|
OCR Scan
|
Q62702G72
|
PDF
|
GaAs FET cfy 14
Abstract: No abstract text available
Text: SIEMENS CFY 35 GaAs FET Datasheet * Low noise * High gain * For iow-noise front end amplifiers * For DBS down converters ESO: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel Pin Configuration
|
OCR Scan
|
Q62702-F1393
Q62702-F1394
GaAs FET cfy 14
|
PDF
|
CGY 8 pin
Abstract: 81541
Text: SIEMENS CGY 0918 GaAs MMIC • • • • Dual band GSM/PCN power amplifier 35dBm / 34dBm output power at 3.5 V Two amplifiers in a single package Power ramp control ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking
|
OCR Scan
|
35dBm
34dBm
Q62702G0077
577ms
15ity
CGY 8 pin
81541
|
PDF
|
GaAs FET cfy 19
Abstract: S11 SIEMENS z0 607 MA 7a
Text: SIEMENS CFY 35 GaAs FET Datasheet * Low noise * High gain * For low-noise front end amplifiers * For DBS down converters 4 ^ ESD: V5005553 Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel CFY 35-20
|
OCR Scan
|
V5005553
Q62702-F1393
Q62702-F1394
GaAs FET cfy 19
S11 SIEMENS
z0 607 MA 7a
|
PDF
|
