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    GAAS MARKING O Search Results

    GAAS MARKING O Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    GAAS MARKING O Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TG2205F

    Abstract: No abstract text available
    Text: TG2205F TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2205F RF SPDT Switch Application: PHS Features Low insertion loss: LOSS = 0.5dB (typ.) Hight isolation: ISL = 25dB (typ.) Control voltage: 0 V/3 V Pin Assignment (top view) Marking Weight: 0.014 g (typ.)


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    PDF TG2205F 000707EBC2 TG2205F

    Untitled

    Abstract: No abstract text available
    Text: TG2205F TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2205F RF SPDT Switch Application: PHS Features Low insertion loss: LOSS = 0.5dB (typ.) Hight isolation: ISL = 25dB (typ.) Control voltage: 0 V/3 V Pin Assignment (top view) Marking Weight: 0.014 g (typ.)


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    PDF TG2205F

    Untitled

    Abstract: No abstract text available
    Text: Opto Semiconductors 3.0 2.6 2.3 2.1 SFH 4200 SFH 4205 fpl06724 Schnelle GaAs-IR-Lumineszenzdiode 950 nm High-Speed GaAs Infrared Emitter (950 nm) 2.1 1.7 0.9 0.7 1.1 0.5 3.7 3.3 3.4 3.0 2.4 0.1 (typ) 0.8 0.6 Cathode/Collector marking 0.18 0.6 0.12 0.4 Cathode/Collector


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    PDF fpl06724 fpl06867 OHF00784 OHL01660

    Q68000-A8370

    Abstract: CGY MW
    Text: GaAs Components Alphanumeric Type Index 12 Alphanumeric Type Index GaAs RF-Transistors, MMICs and Modules Type Marking Ordering Code Package Page BGV 503 BGV 503 Q62702-L0132 P-TSSOP-10-1 170 BGV 903 BGV 903 Q62702-L0131 P-TSSOP-10-1 170 CF 739 MSs Q62702-F1215


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    PDF 1900C Q62702-L0132 Q62702-L0131 Q62702-F1215 Q62702-F1391 Q62705-K0603 Q62705-K0604 Q62702-G0116 Q62703-F97 Q68000-A8370 CGY MW

    TG2202F

    Abstract: DSA003632
    Text: TG2202F TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2202F 1.9 GHz Band Attenuator PHS Digital Cordless Telephone Features Attenuation: ATT = 22dB (typ.) Control voltage: 0 V/3 V Pin Assignment (top view) Marking Weight: 0.014 g (typ.) Maximum Ratings (Ta = 25°C)


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    PDF TG2202F 000707EAC2 TG2202F DSA003632

    TG2205F

    Abstract: RF SPDT
    Text: TG2205F TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2205F RF SPDT Switch Application: PHS Features l Low insertion loss: LOSS = 0.5dB (typ.) l Hight isolation: ISL = 25dB (typ.) l Control voltage: 0 V/3 V Pin Assignment (top view) Marking Weight: 0.014 g (typ.)


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    PDF TG2205F TG2205F RF SPDT

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor, Inc. Product Preview MRFIC1870PP/D Rev. 0, 02/2003 MRFIC1870 3.2 V DCS/PCS GaAs Integrated Power Amplifier Freescale Semiconductor, Inc. Package Information Plastic Package Case 1308 QFN-20 Ordering Information Device Device Marking


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    PDF MRFIC1870PP/D MRFIC1870 QFN-20) QFN-20 MRFIC1870 QFN-20

    MOTOROLA RF POWER SEMICONDUCTOR DETAIL

    Abstract: JEDEC QFN case outline MRFIC1870 QFN-20
    Text: Freescale Semiconductor, Inc. Product Preview MRFIC1870PP/D Rev. 0, 02/2003 MRFIC1870 3.2 V DCS/PCS GaAs Integrated Power Amplifier Freescale Semiconductor, Inc. Package Information Plastic Package Case 1308 QFN-20 Ordering Information Device Device Marking


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    PDF MRFIC1870PP/D MRFIC1870 QFN-20) QFN-20 MRFIC1870 QFN-20 MOTOROLA RF POWER SEMICONDUCTOR DETAIL JEDEC QFN case outline

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor, Inc. Technical Data MRFIC0970/D Rev. 0, 07/2002 MRFIC0970 3.2 V GSM GaAs Integrated Power Amplifier Scale 2:1 Freescale Semiconductor, Inc. Package Information Plastic Package Case 1308 (QFN-20) Ordering Information Device Marking


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    PDF MRFIC0970/D MRFIC0970 QFN-20) QFN-20 MRFIC0970 GSM900 QFN-20

    905 motorola

    Abstract: MRFIC0970 QFN-20 GSM900 MOTOROLA RF POWER SEMICONDUCTOR DETAIL freescale 352 2.6 v
    Text: Freescale Semiconductor, Inc. Technical Data MRFIC0970/D Rev. 0, 07/2002 MRFIC0970 3.2 V GSM GaAs Integrated Power Amplifier Scale 2:1 Freescale Semiconductor, Inc. Package Information Plastic Package Case 1308 (QFN-20) Ordering Information Device Marking


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    PDF MRFIC0970/D MRFIC0970 QFN-20) QFN-20 MRFIC0970 GSM900 QFN-20 905 motorola GSM900 MOTOROLA RF POWER SEMICONDUCTOR DETAIL freescale 352 2.6 v

    barcode label infineon

    Abstract: SOT89 marking GA label infineon barcode SOT89 MARKING CODE 43 sot143 Marking code 53 marking code 51 sot 363
    Text: GaAs Components Package Information 5 Package Information Discrete and RF Semiconductors Packages Marking Layout SOT-143, MW-4, SCT-595, SCT-598 EH S 46 Manufacturer Date code Year/Month Type code EH S 46 Example 1994, June BCW 66 H Marking Layout SC-75, SOT-343, SOT-363, P-TSFP-4


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    PDF OT-143, SCT-595, SCT-598 SC-75, OT-343, OT-363, OT-223, MW-12 OT-89 MW-12 barcode label infineon SOT89 marking GA label infineon barcode SOT89 MARKING CODE 43 sot143 Marking code 53 marking code 51 sot 363

    smd MARKING CODE G72

    Abstract: No abstract text available
    Text: GaAs MMIC CGY 93P Data Sheet • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped Package


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    PDF MW-16 Q62702-G72 GPW05969 smd MARKING CODE G72

    GPL06724

    Abstract: GPL06880 Q62702-P0330 Q62702-P1690
    Text: 3.0 2.6 2.3 2.1 2.1 1.7 0.1 typ 0.9 0.7 1.1 0.5 3.7 3.3 2.4 3.4 3.0 SFH 420 SFH 425 fpl06724 GaAs-IR-Lumineszenzdiode in SMT-Gehäuse GaAs Infrared Emitter in SMT Package 0.8 0.6 Cathode/Collector marking 0.18 0.6 0.12 0.4 Cathode/Collector Approx. weight 0.03 g


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    PDF fpl06724 GPL06724 GPL06880 fpl06867 103ff. 169ff. OHR00860 GPL06724 GPL06880 Q62702-P0330 Q62702-P1690

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS GaAs-IR-Lumineszenzdiode in SMT-Gehäuse GaAs Infrared Emitter in SMT Package S ho 2.1 1.7 0.1 typ SFH 420 SFH 425 CL 0.9 0.7 •y0.\8my J Cathode/Colledor marking 0.12 / m|0.6 0.4 Cathode/Colledor Approx. weight 0.03 g Collector/Cathode marking


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    PDF I03ff. 169ff.

    TG2202F

    Abstract: No abstract text available
    Text: TOSHIBA TG2202F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT GaAs MONOLITHIC TG2202F 1.9GHz BAND ATTENUATOR PHS DIGITAL CORDLESS TELEPHONE FEATURES • ATTENUATION : ATT = 22dB (Typ.) • CONTROL VOLTAGE : 0V/3V PIN CONNECTION (TOP VIEW) v C2 out MARKING gnd Type name


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    PDF TG2202F 961001EBC1 907GHz TG2202F

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TG2202F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT GaAs MONOLITHIC TG2202F 1.9G H z BAND ATTENUATO R PHS DIGITAL CORDLESS TELEPHONE FEATURES • ATTENUATION : ATT = 22dB (Typ.) • CONTROL VOLTAGE : 0 V /3 V PIN CONNECTION (TOP VIEW) VC2 OUT MARKING


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    PDF TG2202F 961001EBC1

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA TG2202F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT GaAs MONOLITHIC TG2202F 1.9 GHz BAND ATTENUATOR PHS DIGITAL CORDLESS TELEPHONE FEATURES • ATTENUATION : ATT = 22 dB (Typ.) • CONTROL VOLTAGE : 0 V / 3 V PIN CONNECTION (TOP VIEW) V C2 OUT MARKING


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    PDF TG2202F 0910EBC1

    TG2202F

    Abstract: No abstract text available
    Text: TO SH IBA TG2202F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT GaAs MONOLITHIC TG2202F 1.9 GHz BAND ATTENUATOR PHS DIGITAL CORDLESS TELEPHONE FEATURES • ATTENUATION : ATT = 22 dB (Typ.) • CONTROL VOLTAGE : 0 V / 3 V PIN CONNECTION (TOP VIEW) V C2 OUT MARKING


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    PDF TG2202F 961001EAC1 TG2202F

    P-SOT-143

    Abstract: CSY210 Type CF 739 Marking Ordering Code MSs P-SOT343-4-1 cly5 P-SOT143-4-1 Q62702-F1215 G69 marking
    Text: GaAs Components Infineon t »c h n o !o g i ss Alphanumeric Type Index 12 Alphanumeric Type Index GaAs RF-Transistors, MMICs and Modules Type Marking Ordering Code Package Page BGV 503 BGV 503 Q62702-L0132 P-TSSOP-10-1 170 BGV 903 BGV 903 Q62702-L0131 P-TSSOP-10-1


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    PDF CFY30 1900C Q62702-L0132 Q62702-L0131 Q62702-F1215 Q62702-F1391 Q62705-K0603 Q62705-K0604 Q62702-G0116 P-SOT-143 CSY210 Type CF 739 Marking Ordering Code MSs P-SOT343-4-1 cly5 P-SOT143-4-1 G69 marking

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TG2200F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT GaAs MONOLITHIC TG2200F 1.9GHz BAND ANTENNA SWITCH PHS DIGITAL CORDLESS TELEPHONE FEATURES • CONTROL VOLTAGE : 0V/3V PIN CONNECTION (TOP V IEW ) VC i R F 1 (RX) MARKING G N D RFcom (A N T ) Type nam e


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    PDF TG2200F

    TG2200F

    Abstract: No abstract text available
    Text: TOSHIBA TG2200F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT GaAs MONOLITHIC TG2200F 1.9GHz BAND ANTENNA SWITCH PHS DIGITAL CORDLESS TELEPHONE FEATURES • CONTROL VOLTAGE : 0V/3V PIN CONNECTION (TOP V IEW ) VC i R F 1 (RX) MARKING G N D RFcom (A N T ) Type nam e


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    PDF TG2200F 961001EBC1 600kHz 900kHz TG2200F

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS CGY 93P GaAs MMIC Preliminary Data • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code taped


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    PDF Q62702G72

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS CGY93P GaAs MMIC Preliminary Data • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code taped Package


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    PDF CGY93P Q62702G72

    GaAs FET cfy 14

    Abstract: No abstract text available
    Text: SIEMENS CFY 35 GaAs FET Datasheet * Low noise * High gain * For iow-noise front end amplifiers * For DBS down converters ESO: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel Pin Configuration


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    PDF Q62702-F1393 Q62702-F1394 GaAs FET cfy 14