KCW-10
Abstract: AuSn solder GaAs MMIC ESD, Die Attach and Bonding Guidelines thermocompression bonder AuSn a/KCW-10
Text: H GaAs MMIC Assembly and Handling Guidelines Application Note 999 Mechanical Considerations Because of the small size of the devices, handling should always be performed with the aid of a microscope. There are several methods for picking up, transferring and die
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5091-1988E
5964-6644E
KCW-10
AuSn solder
GaAs MMIC ESD, Die Attach and Bonding Guidelines
thermocompression
bonder
AuSn
a/KCW-10
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84-1LMI epoxy adhesive
Abstract: 84-1LMI thermocompression Die Attach and Bonding Guidelines copper bond wire PEDESTAL FOR MMIC BRASS
Text: GaAs MMIC ESD, Die Attach and Bonding Guidelines Application Note # 54 - Rev. A May 2000 1.0 ESD Considerations A GaAs IC can be destroyed electrically by a static or other discharge through the device. It must therefore be handled so these effects cannot occur.
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SPT-1002-A-W-2015-L-F
84-1LMI epoxy adhesive
84-1LMI
thermocompression
Die Attach and Bonding Guidelines
copper bond wire
PEDESTAL FOR MMIC BRASS
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Untitled
Abstract: No abstract text available
Text: v01.0801 APPLICATION NOTES HANDLING GUIDELINES FOR ESD PROTECTION OF GaAs MMICs Handling Guidelines for ESD Protection of GaAs MMICs All electrical components are sensitive in some degree to Electrostatic Discharge ESD , and GaAs MMICs are no exception. Many digital semiconductors have some level of protection circuitry designed into the input and output pins.
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MIL-STD-1686.
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Untitled
Abstract: No abstract text available
Text: Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK Handling Guidelines for ESD Protection of GaAs MMICs General Application Note Hittite Microwave Corporation
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MIL-STD-1686.
AS-9100.
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AN-S002
Abstract: AN-S013 5091 AN-S001 MGA-64135 GaAS MMIC Assembly and Handling Guidelines MSA1104 msa-0520 POWER AMPLIFIERS CIRCUIT DIAGRAMS TRANSIMPEDANCE mmic
Text: Applications The application notes represented by these abstracts are available from your local Hewlett-Packard sales office or nearest HewlettPackard authorized distributor or representative. Technical information is also available on the WWW at: www.hp.com/go/rf
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AN-G006
MGA-64135
5091-3745E70
5091-9313E
AN-S009
5091-9054E
AN-S010
5966-0453E
AN-S014
AN-S002
AN-S013
5091
AN-S001
GaAS MMIC Assembly and Handling Guidelines
MSA1104
msa-0520
POWER AMPLIFIERS CIRCUIT DIAGRAMS
TRANSIMPEDANCE mmic
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AN-S002
Abstract: 5091-9054E AN-S014 AN-S011
Text: f ï J l HEW LETT '1 1 PACKARD “KM Applications The application notes represented by these abstracts are available from your local Hewlett-Packard sales office or nearest HewlettPackard authorized distributor or representative. Technical information is also available on the WWW at:
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AN-G006
MGA-64135
5966-0453E
AN-S011
5091-7798E
AN-S013
5091-6488E
AN-S014
AT-41411
AN-S002
5091-9054E
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body contact FET soi RF switch
Abstract: GaAs MMIC ESD, Die Attach and Bonding Guidelines TGA8014-SCC GAAS FET CROSS REFERENCE TGA8021 GAAS FET rf switch CROSS REFERENCE cte table for epoxy adhesive and substrate electric blanket microwave transducer MMIC X-band amplifier
Text: Gallium Arsenide Products Designers’ Information TriQuint Semiconductor Texas Phone: 972 994-8465 Fax: (972)994-8504 http://www.triquint.com IMPORTANT NOTICE TriQuint Semiconductor (TQS) reserves the right to make changes to or to discontinue any semiconductor product or service identified in this publication without notice. TQS advises
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GaAS MMIC Assembly and Handling Guidelines
Abstract: hp 502 ghz power
Text: Whpl W LETT mL'HM HPAE CK ARD GaAs MMIC SPDT Switch Technical Data HMMC-2006 DC - 6 GHz Features • Broad Bandwidth: DC - 6 GHz • Low Insertion Loss: 1 dB • High Isolation: 60 dB at 300 MHz 35 dB at 6 GHz • High PidB' 23 dBm at 50 MHz >27 dBm at 6 GHz
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HMMC-2006
HMMC-2006
GaAS MMIC Assembly and Handling Guidelines
hp 502 ghz power
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Die Attach and Bonding Guidelines
Abstract: GaAs MMIC ESD, Die Attach and Bonding Guidelines long range gold detector circuit diagram agilent HMMC
Text: Agilent HMMC-5033 17.7-32 GHz Power Amplifier Data Sheet Features 2.74 x 1.31 mm 108 × 51.6 mils ±10 µm (±0.4 mils) 127 ± 15 µm (5.0 ± 0.6 mils) Chip Size: Chip Size Tolerance: Chip Thickness: Description The HMMC-5033 is a MMIC power amplifier designed for use in
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HMMC-5033
HMMC-5033
HMMC-5040
HMMC-5618
HMMC-5618
HMMC-5033/rev
Die Attach and Bonding Guidelines
GaAs MMIC ESD, Die Attach and Bonding Guidelines
long range gold detector circuit diagram
agilent HMMC
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ablebond 84-1 LMI
Abstract: ABLEBONd 84-1 A004R AMMC-6222 AMMC-6222-W10
Text: Products > RF for Mobile, WLAN, mmW > mmW & microWave Devices > Amplifiers > AMMC-6222 AMMC-6222 7-21GHz GaAs High Linearity Low Noise Amplifier Description Avago Technologies AMMC-6222 is an easy-to-use broadband, high gain, high linearity Low Noise Amplifier that operates from 7 GHz to 21GHz.
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AMMC-6222
7-21GHz
AMMC-6222
21GHz.
AMMC-6222-W10
AMMC-6222-W50
ablebond 84-1 LMI
ABLEBONd 84-1
A004R
AMMC-6222-W10
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HP MMIC INA
Abstract: mmic distributed amplifier INA-10386 mps 0736 mmic ina MSA-0404 low noise amplifier ghz amplifier TRANSISTOR 12 GHZ MSA-0520 gaas Low Noise Amplifier
Text: HP RFIC and MMIC Amplifiers Field Values 20-Nov-97 DocPDF DocName Title Subject Author Keywords pdf_docs\amps\00_FRON Hewlett-Packard A Leader in T\I_III.PDF Components Hewlett-Packard A Leader in Components pdf_docs\amps\00_FRON Alphanumeric Index T\VII_XII.PDF
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20-Nov-97
docs\amps\00
docs\amps\01
docs\amps\06
MGA-87563
docs\amps\10
docs\amps\11
HP MMIC INA
mmic distributed amplifier
INA-10386
mps 0736
mmic ina
MSA-0404
low noise amplifier ghz
amplifier TRANSISTOR 12 GHZ
MSA-0520
gaas Low Noise Amplifier
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ultrasonic probe ge
Abstract: GaAs MMIC ESD, Die Attach and Bonding Guidelines GaAs FET chip ultrasonic bond AN-1001 Ultrasonic bubble kulicke Soffa nec microwave
Text: California Eastern Laboratories AN-1001 APPLICATION NOTE RECOMMENDED HANDLING PROCEDURES FOR MICROWAVE TRANSISTOR AND MMIC CHIPS INTRODUCTION This document is provided to inform users of some of the handling precautions necessary and the assembly processes
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AN-1001
ultrasonic probe ge
GaAs MMIC ESD, Die Attach and Bonding Guidelines
GaAs FET chip
ultrasonic bond
AN-1001
Ultrasonic bubble
kulicke Soffa
nec microwave
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Untitled
Abstract: No abstract text available
Text: blE T> m HEWLETT-PACKARD/ CMPNTS 4447564 DDlOlflS 4Tb • H P A Whol H EW L E T T 1J' EM PA C K A R D GaAs MMIC SPDT Switch Technical Data HMMC-2006 DC - 6 GHz Features • Broad Bandwidth: DC - 6 GHz • Low Insertion Loss: 1 dB • High Isolation: 60 dB at 300 MHz
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HMMC-2006
HMMC-2006
44475A4
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HMMC-2027
Abstract: GaAs MMIC ESD, Die Attach and Bonding Guidelines Die Attach and Bonding Guidelines
Text: Agilent HMMC-2027 DC– 26.5 GHz SPDT GaAs MMIC Switch Data Sheet Features • Outputs terminated in 50Ω when off • Frequency range: DC– 26.5 GHz • Insertion loss: 2.5 dB @ 26.5 GHz • Isolation: >70 dB @ 45 MHz >30 dB @ 26.5 GHz • Return loss:
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HMMC-2027
HMMC-2027
5965-5450E
5988-3197EN
GaAs MMIC ESD, Die Attach and Bonding Guidelines
Die Attach and Bonding Guidelines
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HMMC-2006
Abstract: GaAs MMIC ESD, Die Attach and Bonding Guidelines Die Attach and Bonding Guidelines
Text: Agilent HMMC-2006 DC–6 GHz Unterminated SPDT Switch Data Sheet SEL1 Features • Frequency range: DC– 6 GHz SEL2 • Insertion loss: <1dB @ 6 GHz RF OUT2 RF OUT1 • Isolation: >70 dB @ 45 MHz >35 dB @ 6 GHz • Return loss: >12 dB Both input & output
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HMMC-2006
HMMC-2006
5967-5765E
5988-3199EN
GaAs MMIC ESD, Die Attach and Bonding Guidelines
Die Attach and Bonding Guidelines
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1gg6
Abstract: No abstract text available
Text: Agilent HMMC-5032 17.7–32 GHz Amplifier 1GG6-8009 Data Sheet Features • • • • • 22 dBm output P –1 dB 8 dB gain 50 Ω input/output matching Small size Bias: 4.5 volts, 250 mA Chip size: Chip size tolerance: Chip thickness: Pad dimensions: 1370 x 770 µm (53.3 x 30.0 mils)
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HMMC-5032
1GG6-8009
HMMC-5040
HMMC-5618
5989-6209EN
1gg6
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MMIC Amplifier A08
Abstract: No abstract text available
Text: Agilent HMMC-5032 17.7–32 GHz Amplifier 1GG6-8009 Data Sheet Features • • • • • 22 dBm output P –1 dB 8 dB gain 50 Ω input/output matching Small size Bias: 4.5 volts, 250 mA Chip size: Chip size tolerance: Chip thickness: Pad dimensions: 1370 x 770 µm (53.3 x 30.0 mils)
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HMMC-5032
1GG6-8009
HMMC-5032
HMMC-5040
20-40m
5989-6209EN
MMIC Amplifier A08
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Untitled
Abstract: No abstract text available
Text: Avago HMMC-5021 2–22 GHz , HMMC-5026 (2–26.5 GHz) GaAs MMIC Traveling Wave Amplifiers Data Sheet Chip Size: 2980 x 770 µm (117.3 x 30.3 mils) Chip Size Tolerance: ±10 µm (±0.4 mils) Chip Thickness: 127 ± 15 µm (5.0 ± 0.6 mils) Pad Dimensions: 75 x 75µm (2.95 x 2.95 mils), or larger
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HMMC-5021
HMMC-5026
HMMC-5021/26
5965-5449E
5988-1893EN
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27S12
Abstract: No abstract text available
Text: Agilent HMMC-5021 2-22 GHz HMMC-5022 (2-22 GHz) and HMMC-5026 (2-26.5 GHz) 2-26.5 GHz GaAs MMIC Traveling Wave Amplifier Features Data Sheet Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions: 2980 x 770 µm (117.3 × 30.3 mils) ±10 µm (±0.4 mils)
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HMMC-5021
HMMC-5022
HMMC-5026
HMMC-5021/22/26
HP83040
150mA)
HMMC-5021/22/26/rev
27S12
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Untitled
Abstract: No abstract text available
Text: Avago HMMC-5032 17.7 – 32 GHz Amplifier Data Sheet Chip Size: 1.4 x 0.78 mm 55.1 x 30.7 mils Chip Size Tolerance: ±10 µm (±0.4 mils) Chip Thickness: 127 ± 15 µm (5.0 ± 0.6 mils) Description The HMMC-5032 is a MMIC power amplifier designed for use in wireless transmitters that operate within
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HMMC-5032
HMMC-5032
HMMC-5040
HMMC-5618
5966-4572E
5988-2710EN
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Traveling Wave Amplifier
Abstract: No abstract text available
Text: HMMC-5021 2–22 GHz , HMMC-5026 (2–26.5 GHz) GaAs MMIC Traveling Wave Amplifiers Data Sheet Chip Size: 2980 x 770 m (117.3 x 30.3 mils) Chip Size Tolerance: ±10 m (±0.4 mils) Chip Thickness: 127 ± 15 m (5.0 ± 0.6 mils) Pad Dimensions: 75 x 75m (2.95 x 2.95 mils), or larger
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HMMC-5021
HMMC-5026
HMMC-5021/26
HP83040
5988-1893EN
V02-3634EN
Traveling Wave Amplifier
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Untitled
Abstract: No abstract text available
Text: HMMC-2027 DC– 26.5 GHz SPDT GaAs MMIC Switch Data Sheet Description The HMMC-2027 is a GaAs monolithic microwave integrated circuit MMIC designed for low insertion loss and high isolation from DC to 26.5 GHz. It is intended for use as a general-purpose, single-pole,
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HMMC-2027
HMMC-2027
5988-3197EN
AV01-0316EN
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5038
Abstract: No abstract text available
Text: Avago HMMC-5038 38 GHz LNA Data Sheet Chip Size: 1630 x 760 µm 64.2 x 29.9 mils Chip Size Tolerance: ±10 µm (±0.4 mils) Chip Thickness: 127 ± 15 µm (5.0 ± 0.6 mils) Pad Dimensions: 80 x 80 µm (3.1 x 3.1 mils) Description The HMMC-5038 MMIC is a high-gain low-noise
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HMMC-5038
HMMC-5038
5965-5445E
5988-2711EN
5038
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45580
Abstract: 1gg6-8002 4433 fet tca 761 1gg6 8002 amplifier HMMC-5618 GaAs MMIC ESD, Die Attach and Bonding Guidelines agilent HMMC
Text: Agilent HMMC-5617 6–18 GHz Medium Power Amplifier 1GG6-8002 Data Sheet Features • High efficiency: 11% @ P–1 dB typical • Output power, P–1 dB: 18 dBm typical • High gain: 14 dB typical • Flat gain response: ±0.5 dB typical • Low input/output VSWR:
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HMMC-5617
1GG6-8002
HMMC-5617
5989-9479EN
45580
1gg6-8002
4433 fet
tca 761
1gg6
8002 amplifier
HMMC-5618
GaAs MMIC ESD, Die Attach and Bonding Guidelines
agilent HMMC
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