GAAS MMIC ESD, DIE ATTACH AND BONDING GUIDELINES Search Results

GAAS MMIC ESD, DIE ATTACH AND BONDING GUIDELINES Result Highlights (5)

Part	Manufacturer	Description
DFE2016CKA-1R0M=P2	Murata Manufacturing Co Ltd	Fixed IND 1uH 1800mA NONAUTO
BLM15PX121BH1D	Murata Manufacturing Co Ltd	FB SMD 0402inch 120ohm POWRTRN
BLM15PX181SH1D	Murata Manufacturing Co Ltd	FB SMD 0402inch 180ohm POWRTRN
MGN1S1208MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-8V GAN
LQW18CN55NJ0HD	Murata Manufacturing Co Ltd	Fixed IND 55nH 1500mA POWRTRN

GAAS MMIC ESD, DIE ATTACH AND BONDING GUIDELINES Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
84-1LMI epoxy adhesive Abstract: 84-1LMI thermocompression Die Attach and Bonding Guidelines copper bond wire PEDESTAL FOR MMIC BRASS Text: GaAs MMIC ESD, Die Attach and Bonding Guidelines Application Note # 54 - Rev. A May 2000 1.0 ESD Considerations A GaAs IC can be destroyed electrically by a static or other discharge through the device. It must therefore be handled so these effects cannot occur.	Original	SPT-1002-A-W-2015-L-F 84-1LMI epoxy adhesive 84-1LMI thermocompression Die Attach and Bonding Guidelines copper bond wire PEDESTAL FOR MMIC BRASS	PDF
ultrasonic probe ge Abstract: GaAs MMIC ESD, Die Attach and Bonding Guidelines GaAs FET chip ultrasonic bond AN-1001 Ultrasonic bubble kulicke Soffa nec microwave Text: California Eastern Laboratories AN-1001 APPLICATION NOTE RECOMMENDED HANDLING PROCEDURES FOR MICROWAVE TRANSISTOR AND MMIC CHIPS INTRODUCTION This document is provided to inform users of some of the handling precautions necessary and the assembly processes	Original	AN-1001 ultrasonic probe ge GaAs MMIC ESD, Die Attach and Bonding Guidelines GaAs FET chip ultrasonic bond AN-1001 Ultrasonic bubble kulicke Soffa nec microwave	PDF
KCW-10 Abstract: AuSn solder GaAs MMIC ESD, Die Attach and Bonding Guidelines thermocompression bonder AuSn a/KCW-10 Text: H GaAs MMIC Assembly and Handling Guidelines Application Note 999 Mechanical Considerations Because of the small size of the devices, handling should always be performed with the aid of a microscope. There are several methods for picking up, transferring and die	Original	5091-1988E 5964-6644E KCW-10 AuSn solder GaAs MMIC ESD, Die Attach and Bonding Guidelines thermocompression bonder AuSn a/KCW-10	PDF
Die Attach and Bonding Guidelines Abstract: GaAs MMIC ESD, Die Attach and Bonding Guidelines long range gold detector circuit diagram agilent HMMC Text: Agilent HMMC-5033 17.7-32 GHz Power Amplifier Data Sheet Features 2.74 x 1.31 mm 108 × 51.6 mils ±10 µm (±0.4 mils) 127 ± 15 µm (5.0 ± 0.6 mils) Chip Size: Chip Size Tolerance: Chip Thickness: Description The HMMC-5033 is a MMIC power amplifier designed for use in	Original	HMMC-5033 HMMC-5033 HMMC-5040 HMMC-5618 HMMC-5618 HMMC-5033/rev Die Attach and Bonding Guidelines GaAs MMIC ESD, Die Attach and Bonding Guidelines long range gold detector circuit diagram agilent HMMC	PDF
HMMC-5034 Abstract: HMMC-5040 GaAs MMIC ESD, Die Attach and Bonding Guidelines agilent HMMC Text: Agilent HMMC-5034 37–43 GHz Amplifier Data Sheet TC926 Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions: Description The HMMC-5034 is a MMIC power amplifier designed for use in wireless transmitters that operate within the 37 GHz to 42.5 GHz range. At 40 GHz it	Original	HMMC-5034 TC926 HMMC-5034 HMMC-5040 5988-3203EN GaAs MMIC ESD, Die Attach and Bonding Guidelines agilent HMMC	PDF
1GC1 Abstract: Die Attach and Bonding Guidelines TC225 GaAs MMIC ESD, Die Attach and Bonding Guidelines 1gc1 agilent TC2-25 2tc2-25 agilent HBT transistor series Text: Agilent 1GC1-8048 40–72 GHz Doubler TC225 Data Sheet Features • PIN = + 15 dBm • Wide Bandwidth: 40–72 GHz Usable to 80+ GHz • Low Conversion Loss: 13 dB typical • Low 1/2 and 3/2 spurs: –23 dBc typical Chip Size: Chip Size Tolerance: Chip Thickness:	Original	1GC1-8048 TC225 TC225 1GC1-8048 TC225/rev 1GC1 Die Attach and Bonding Guidelines GaAs MMIC ESD, Die Attach and Bonding Guidelines 1gc1 agilent TC2-25 2tc2-25 agilent HBT transistor series	PDF
TC225 Abstract: No abstract text available Text: Agilent 1GC1-8048 40–72 GHz Doubler TC225 Data Sheet Features • PIN = + 15 dBm • Wide Bandwidth: 40–72 GHz Usable to 80+ GHz • Low Conversion Loss: 13 dB typical • Low 1/2 and 3/2 spurs: –23 dBc typical Chip Size: Chip Size Tolerance: Chip Thickness:	Original	1GC1-8048 TC225 TC225 1GC1-8048 TC225/rev	PDF
TC221 Abstract: No abstract text available Text: Agilent 1GC1-8038 50 GHz Frequency Doubler TC221 Data Sheet Features • Conversion Efficiency: −12 dB Typical • 1/2 and 3/2 spurs: 15 dBc Typical Chip Size: Chip Size Tolerance: Chip Thickness: 890 x 500 µm 35.0 x 19.7 mils ±10 µm (±0.4 mils) 127 ± 15 µm (5.0 ± 0.6 mils)	Original	1GC1-8038 TC221 TC221/rev	PDF
TC221 Abstract: 1GC1-8038 GaAs MMIC ESD, Die Attach and Bonding Guidelines 8038 CE25 Die Attach and Bonding Guidelines Text: Agilent 1GC1-8038 50 GHz Frequency Doubler TC221 Data Sheet Features • Conversion Efficiency: −12 dB Typical • 1/2 and 3/2 spurs: 15 dBc Typical Chip Size: Chip Size Tolerance: Chip Thickness: 890 x 500 µm 35.0 x 19.7 mils ±10 µm (±0.4 mils) 127 ± 15 µm (5.0 ± 0.6 mils)	Original	1GC1-8038 TC221 TC221/rev 1GC1-8038 GaAs MMIC ESD, Die Attach and Bonding Guidelines 8038 CE25 Die Attach and Bonding Guidelines	PDF
HMMC-2006 Abstract: GaAs MMIC ESD, Die Attach and Bonding Guidelines Die Attach and Bonding Guidelines Text: Agilent HMMC-2006 DC–6 GHz Unterminated SPDT Switch Data Sheet SEL1 Features • Frequency range: DC– 6 GHz SEL2 • Insertion loss: <1dB @ 6 GHz RF OUT2 RF OUT1 • Isolation: >70 dB @ 45 MHz >35 dB @ 6 GHz • Return loss: >12 dB Both input & output	Original	HMMC-2006 HMMC-2006 5967-5765E 5988-3199EN GaAs MMIC ESD, Die Attach and Bonding Guidelines Die Attach and Bonding Guidelines	PDF
HMMC-2027 Abstract: GaAs MMIC ESD, Die Attach and Bonding Guidelines Die Attach and Bonding Guidelines Text: Agilent HMMC-2027 DC– 26.5 GHz SPDT GaAs MMIC Switch Data Sheet Features • Outputs terminated in 50Ω when off • Frequency range: DC– 26.5 GHz • Insertion loss: 2.5 dB @ 26.5 GHz • Isolation: >70 dB @ 45 MHz >30 dB @ 26.5 GHz • Return loss:	Original	HMMC-2027 HMMC-2027 5965-5450E 5988-3197EN GaAs MMIC ESD, Die Attach and Bonding Guidelines Die Attach and Bonding Guidelines	PDF
PUNSE Abstract: 1GG7-8005 1GG7 Text: Agilent HMMC-2027 DC–26.5 GHz SPDT GaAs MMIC Switch 1GG7-8005 Data Sheet SEL1 RF OUT1 SEL2 RF OUT2 Features • Outputs terminated in 50 Ω when off • Frequency range: DC to 26.5 GHz • Insertion loss: 2.5 dB @ 26.5 GHz • Isolation: > 70 dB @ 45 MHz	Original	HMMC-2027 1GG7-8005 5989-6204EN PUNSE 1GG7	PDF
AuSn eutectic Abstract: inductive pickup Text: v02.1203 Handling Precautions Follow these precautions to avoid permanent damage: Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen	Original		PDF
GaAs MMIC ESD, Die Attach and Bonding Guidelines Abstract: diode 716 Die Attach and Bonding Guidelines HSCH-9201 HSCH-9501 chip diode agilent HSCH9201 Text: Agilent HSCH-9501 GaAs Schottky Diode Series Pair Tee Data Sheet Features • Low Junction Capacitance – typically 40 fF • Low Series Resistance – typically 3 Ω • Large bond pads suitable for automated wire-bonding or flip-chip assembly • Polyimide scratch protection	Original	HSCH-9501 HSCH-9501 HSCH-9201 Assemb850 HSCH-9501/rev GaAs MMIC ESD, Die Attach and Bonding Guidelines diode 716 Die Attach and Bonding Guidelines chip diode agilent HSCH9201	PDF

Untitled Abstract: No abstract text available Text: HMMC-2027 DC– 26.5 GHz SPDT GaAs MMIC Switch Data Sheet Description The HMMC-2027 is a GaAs monolithic microwave integrated circuit MMIC designed for low insertion loss and high isolation from DC to 26.5 GHz. It is intended for use as a general-purpose, single-pole,	Original	HMMC-2027 HMMC-2027 5988-3197EN AV01-0316EN	PDF
GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz Abstract: GaAs MMIC ESD, Die Attach and Bonding Guidelines Text: Agilent HMMC-2007 DC– 8 GHz Terminated SPDT Switch Data Sheet Features • Outputs terminated in 50Ω when off • Frequency range: DC– 8 GHz • Insertion loss: <1.2 dB @ 8 GHz • Isolation: >70 dB @ 45 MHz >35 dB @ 8 GHz • Return loss: 25 dB both input & output	Original	HMMC-2007 HMMC-2007 5965-5451E 5988-3198EN GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz GaAs MMIC ESD, Die Attach and Bonding Guidelines	PDF
HMMC-3040 Abstract: HMMC-5040 GaAs MMIC ESD, Die Attach and Bonding Guidelines "common drain" amplifier impedance matching Text: Agilent HMMC-3040 20 – 43 GHz Double-Balanced Mixer and LO-Amplifier Data Sheet Features • Both up and downconverting functions • Harmonic LO mixing capability • Large bandwidth: Chip Size: 2520 x 730 µm 99.2 x 28.7 mils Chip Size Tolerance: ±10 µm (±0.4 mils)	Original	HMMC-3040 HMMC-3040 5966-4571E 5988-1906EN HMMC-5040 GaAs MMIC ESD, Die Attach and Bonding Guidelines "common drain" amplifier impedance matching	PDF
Die Attach and Bonding Guidelines Abstract: schottky diode application chip diode agilent HSCH-9401 Text: Agilent HSCH-9401 GaAs Schottky Diode Data Sheet Features Chip Size: 610 x 255 µm 24 × 10 mils Chip Size Tolerance: ± 10 µm (± 0.4 mils) Chip Thickness: 100 µm (4 mils) Chip Thickness Tolerance:± 15 µm (± 0.6 mils) Bond Pad Sizes: 175 × 175 µm (6.9 × 6.9 mils)	Original	HSCH-9401 HSCH-9401 HSCH-9401/rev Die Attach and Bonding Guidelines schottky diode application chip diode agilent	PDF
ALC 887 Abstract: HMMC-1015 hmmc 1015 Text: Agilent HMMC-1015 DC–50 GHz Variable Attenuator 1GG7-8008 Data Sheet Features • Specified frequency range: DC to 26.5 GHz • Pin –1 dB : 27 dBm @ 500 MHz • Return loss: 10 dB • Minimum attenuation: 2.0 dB • Maximum attenuation: 30.0 dB Chip size:	Original	HMMC-1015 1GG7-8008 5989-6202EN ALC 887 hmmc 1015	PDF
2043 dd Abstract: HMMC-3040 HMMC-5040 Die Attach and Bonding Guidelines Text: Agilent HMMC-3040 20 – 43 GHz Double-Balanced Mixer and LO-Amplifier Data Sheet Features • Both up and downconverting functions • Harmonic LO mixing capability • Large bandwidth: Chip Size: 2520 x 730 µm 99.2 x 28.7 mils Chip Size Tolerance: ±10 µm (±0.4 mils)	Original	HMMC-3040 HMMC-3040 5988-1906EN 5988-6895EN 2043 dd HMMC-5040 Die Attach and Bonding Guidelines	PDF
Untitled Abstract: No abstract text available Text: Avago HMMC-5032 17.7 – 32 GHz Amplifier Data Sheet Chip Size: 1.4 x 0.78 mm 55.1 x 30.7 mils Chip Size Tolerance: ±10 µm (±0.4 mils) Chip Thickness: 127 ± 15 µm (5.0 ± 0.6 mils) Description The HMMC-5032 is a MMIC power amplifier designed for use in wireless transmitters that operate within	Original	HMMC-5032 HMMC-5032 HMMC-5040 HMMC-5618 5966-4572E 5988-2710EN	PDF
GaAs MMIC ESD, Die Attach and Bonding Guidelines Abstract: all diode List Die Attach and Bonding Guidelines diode PN diode specifications Schottky schottky diode application die bonding DIODE 255 diode all Text: HSCH-9401 GaAs Schottky Diode Data Sheet Description The HSCH-9401 is a discrete Schottky barrier diode fabricated with the Schottky Barrier Integrated Diode SBID process. Features • fC >800 GHz Applications The HSCH-9401 is a general purpose millimeter wave	Original	HSCH-9401 HSCH-9401 5988-4416E 5988-6154EN GaAs MMIC ESD, Die Attach and Bonding Guidelines all diode List Die Attach and Bonding Guidelines diode PN diode specifications Schottky schottky diode application die bonding DIODE 255 diode all	PDF
ALC 887 Abstract: 1GG7 Text: Agilent HMMC-1002 DC–50 GHz Variable Attenuator 1GG7-8001 Data Sheet Features • Specified frequency range: DC to 26.5 GHz • Return loss: 10 dB • Minimum attenuation: 2.0 dB • Maximum attenuation: 30.0 dB Chip size: Chip size tolerance: Chip thickness:	Original	HMMC-1002 1GG7-8001 5989-6201EN ALC 887 1GG7	PDF
Die Attach and Bonding Guidelines Abstract: HMMC-1015 GaAs MMIC ESD, Die Attach and Bonding Guidelines Text: Agilent HMMC-1015 DC–50 GHz Variable Attenuator Data Sheet Features • Specified Frequency Range: DC–26.5 GHz • Pin -1dB : 27 dBm @ 500 MHz • Return Loss: 10 dB • Minimum Attenuation: 2.0 dB Chip Size: 1470 x 610 µm (57.9 x 24.0 mils) Chip Size Tolerance:	Original	HMMC-1015 HMMC-1015 5968-4446E 5988-2547EN Die Attach and Bonding Guidelines GaAs MMIC ESD, Die Attach and Bonding Guidelines	PDF

GAAS MMIC ESD, DIE ATTACH AND BONDING GUIDELINES Search Results

GAAS MMIC ESD, DIE ATTACH AND BONDING GUIDELINES Result Highlights (5)

GAAS MMIC ESD, DIE ATTACH AND BONDING GUIDELINES Datasheets Context Search

84-1LMI epoxy adhesive

ultrasonic probe ge

KCW-10

Die Attach and Bonding Guidelines

HMMC-5034

1GC1

TC225

TC221

TC221

HMMC-2006

HMMC-2027

PUNSE

AuSn eutectic

GaAs MMIC ESD, Die Attach and Bonding Guidelines

Untitled

GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz

HMMC-3040

Die Attach and Bonding Guidelines

ALC 887

2043 dd

Untitled

GaAs MMIC ESD, Die Attach and Bonding Guidelines

ALC 887

Die Attach and Bonding Guidelines