water jet cutting machine control schematic
Abstract: sic wafer 100 mm silicon mems microphone UCHIYA GaAs wafer dicing Chip free mems microphone TLASC0022EA DSASW005159 MEMS front of fabrication process
Text: Stealth Dicing Technical Information for MEMS Table of Contents 1. Introduction 2. Problems with dicing in MEMS fabrication processes 2.1 Grinding wheel type blade dicing 2.2 Making dicing a completely dry process 3. Stealth dicing technology 3.1 Basic principle of stealth dicing
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TLAS9005E01
water jet cutting machine control schematic
sic wafer 100 mm
silicon mems microphone
UCHIYA
GaAs wafer dicing Chip free
mems microphone
TLASC0022EA
DSASW005159
MEMS
front of fabrication process
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Revalpha
Abstract: Nitto* revalpha Nitto Denko Revalpha Revalpha NO.3195H etch uv tape and furukawa magnetron X-band microwave oven magnetron Mitsui chemicals X-band antenna
Text: Benefits and Challenges in Decreasing GaAs Through Substrate Via Size and Die Thickness Henry Hendriks, Allen Hanson, Thomas Lepkowski, Anthony Quaglietta, and Bharat Patel M/A-COM : Tyco Electronics, 100 Chelmsford Street, Lowell, MA 01851 USA Phone: 978 656-2562, Fax: (978) 656-2900, Email: hhendriks@tycoelectronics.com
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TLASC0022EA
Abstract: No abstract text available
Text: Stealth Dicing Technical Information for MEMS 2 Table of Contents 1. Introduction 2. Problems with dicing in MEMS fabrication processes 2.1 Grinding wheel type blade dicing 2.2 Making dicing a completely dry process 3. Stealth dicing technology 3.1 Basic principle of stealth dicing
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TLAS9005E04
TLASC0022EA
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ic 555 use with metal detector
Abstract: DVD optical pick-up assembly CD laser pickup assembly bolometer detector Light Detector laser
Text: Introduction CHAPTER 01 1 Light and opto-semiconductors 1-1 Light 1-2 Opto-semiconductors 2 Opto-semiconductor lineup 3 Manufacturing process of opto-semiconductors 1 Introduction 1. Light and opto-semiconductors 1-1 Light Definition of light Light, like radio waves, is a type of electromagnetic wave.
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500/250/arc xenon flash lamps
Abstract: No abstract text available
Text: Electron Tube Products Condensed Catalog HAMAMATSU PHOTONICS K.K. Development and production centers for light sensors, light sources, and application-specific products utilizing light to support a wide range of needs in medical diagnosis/treatment, chemical analysis,
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OTH0016E06
500/250/arc xenon flash lamps
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J-STD-012
Abstract: 1218 footprint IPC VMMK-1225 GaAs wafer dicing Chip free VMMK-1218 zener wafer
Text: Avago introduces 18 GHz and 26.5 GHz low-noise E-pHEMT in 0402 Compatible Packages Produced by Advanced Wafer-scale Packaging Technology White Paper Introduction Smaller, lower cost components are crucial to the development of today’s higher-performance, smaller and increasingly price-competitive mobile devices. Since the
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J-STD-012
VMMK-1225
AV02-1238EN
1218 footprint IPC
GaAs wafer dicing Chip free
VMMK-1218
zener wafer
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GMOY6178
Abstract: No abstract text available
Text: GaAs-Infrarot-Lumineszenzdiode 950 nm, 300 µm Kantenlänge GaAs Infrared Emitting Diode (950 nm, 12 mil) F 0594A Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Typ. Gesamtleistung: 15 mW @ 100 mA im TOPLED Gehäuse • Chipgröße 300 x 300 µm2
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optokoppler
Abstract: GaAs wafer dicing Chip free
Text: GaAs-Infrarot-Lumineszenzdiode 950 nm, 200 µm Kantenlänge GaAs Infrared Emitting Diode (950 nm, 8 mil) F 1235B F 1235C Vorläufige Daten / Preliminary Data Wesentliche Merkmale • • • • • • Features Chipgröße 200 x 200 µm Emissionswellenlänge: 950 nm
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1235B
1235C
optokoppler
GaAs wafer dicing Chip free
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GMOY6177
Abstract: "Infrared LED" 880 nm Pulsed Forward Current
Text: GaAs-Infrarot-Lumineszenzdiode 950 nm, 250 µm Kantenlänge GaAs Infrared Emitting Diode (950 nm, 10 mil) F 0235F Vorläufige Daten / Preliminary Data Wesentliche Merkmale • • • • • • • Features Chipgröße 250 x 250 µm Emissionswellenlänge: 950 nm
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0235F
GMOY6177
"Infrared LED" 880 nm Pulsed Forward Current
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osram topled
Abstract: GMOY6080
Text: GaAs-IR-Lumineszenzdiode 950 nm GaAs Infrared Emitter (950 nm) F 0094U F 0094V Wesentliche Merkmale • • • • • • Features Chipgröße 300 x 300 µm GaAs-LED mit sehr hohem Wirkungsgrad Gute Linearität (Ie = f [IF]) bei hohen Strömen Gleichstrom- oder Impulsbetrieb möglich
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osram topled
GMOY6080
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GMOY6076
Abstract: GaAs wafer dicing Chip free osram topled
Text: GaAs-IR-Lumineszenzdiode 950 nm GaAs Infrared Emitter (950 nm) F 0235D Wesentliche Merkmale • • • • • • • • Features Chipgröße 250 x 250 µm Wellenlänge der Strahlung 950 nm GaAs-LED mit sehr hohem Wirkungsgrad Gute Linearität (Ie = f [IF]) bei hohen Strömen
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GMOY6076
GaAs wafer dicing Chip free
osram topled
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pe4261
Abstract: No abstract text available
Text: Advance Information PE4261 Flip Chip Product Description The PE4261 SP4T RF CMOS Flip Chip Switch is designed specifically to address the needs of the antenna Switch Module Market for GSM Handsets. On-chip CMOS decode logic is used to facilitate two-pin, low voltage CMOS control inputs.
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Untitled
Abstract: No abstract text available
Text: Preliminary Specification PE4261 Flip Chip SP4T UltraCMOS 2.6 V Switch Product Description 100 – 3000 MHz The PE4261 SP4T RF CMOS Flip Chip Switch is designed specifically to address the needs of the antenna Switch Module Market for GSM Handsets. On-chip CMOS decode logic is
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F 1235A
Abstract: 1235a F1235A
Text: GaAs-Infrarot-Lumineszenzdiode 950 nm, 200 µm Kantenlänge GaAs Infrared Emitting Diode (950 nm, 8 mil) F 1235A Vorläufige Daten / Preliminary data Wesentliche Merkmale Features • Typ. Gesamtleistung: 10 mW @ 100 mA im TOPLED Gehäuse • Chipgröße 200 x 200 µm2
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OPTOKOPPLER
Abstract: No abstract text available
Text: GaAs-Infrarot-Lumineszenzdiode 950 nm, 250 µm Kantenlänge GaAs Infrared Emitting Diode (950 nm, 10 mil) F 0235D Vorläufige Daten / Preliminary data Wesentliche Merkmale Features • Typ. Gesamtleistung: 13 mW @ 100 mA im TOPLED Gehäuse • Chipgröße 250 x 250 µm2
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F 0094U
Abstract: No abstract text available
Text: GaAs-Infrarot-Lumineszenzdiode 950 nm, 300 µm Kantenlänge GaAs Infrared Light Emitting Diode (950 nm, 12 mil) F 0094U F 0094V Vorläufige Daten / Preliminary data Wesentliche Merkmale Features • Typ. Gesamtleistung: 15 mW @ 100 mA im TOPLED Gehäuse
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F 0094U
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cdm 12.1 laser
Abstract: No abstract text available
Text: Product Specification PE4261 Flip Chip SP4T UltraCMOS 2.6 V Switch Product Description 100 – 3000 MHz The PE4261 SP4T RF UltraCMOS™ Flip Chip Switch is designed specifically to address the needs of the antenna Switch Module Market for GSM Handsets. On-chip CMOS
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cdm 12.1 laser
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xenon linear flash lamps
Abstract: Lamps FLASH TUBE xenon Solar Garden Light Controller 4 pin deuterium lamp circuit C8855-01 C9744 uv light PHOTO detector xenon flash lamps led optical communication uv flame sensor
Text: Photon is our business Electron Tube Products Condensed Catalog HAMAMATSU PHOTONICS K.K. E l e c t r o n T u Development and production centers for light sensors, light sources, and application-specific products utilizing light to support a wide range of needs in medical diagnosis/treatment, chemical analysis,
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E-08290
OTH0016E02
xenon linear flash lamps
Lamps FLASH TUBE xenon
Solar Garden Light Controller 4 pin
deuterium lamp circuit
C8855-01
C9744
uv light PHOTO detector
xenon flash lamps
led optical communication
uv flame sensor
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R7600U-300
Abstract: UV LED 300 nm uvtron R11715-01 CD laser pickup assembly R11410 R928, hamamatsu
Text: Visit our new website to find out all about us The latest catalog and detailed product information are available from our website. Our website contains a wealth of information including our corporate profile, history and news, as well as product introductions, new technology briefs, exhibition / workshop / seminar introductions,
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R7600U-300
UV LED 300 nm
uvtron
R11715-01
CD laser pickup assembly
R11410
R928, hamamatsu
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Light Detector laser
Abstract: short distance measurement ir infrared diode
Text: Opto-semiconductors Condensed Catalog HAMAMATSU PHOTONICS K.K. Our unique photonics technology delivers highly sophisticated opto-semiconductors with high-sensitivity and high-speed response. Hamamatsu Photonics has been at the cutting edge of photonics technology for 60 years. In that
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Light Detector laser
short distance measurement ir infrared diode
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C13004-01
Abstract: R11715-01 CD laser pickup assembly flow pressure monitor biomedical R928, hamamatsu H7828
Text: 2015 PHOTONIC DEVICES Electron Tube Devices and Applied Products Visit our new website to find out all about us The latest catalog and detailed product information are available from our website. Our website contains a wealth of information including our corporate profile, history and news,
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OTH0023E01
C13004-01
R11715-01
CD laser pickup assembly
flow pressure monitor biomedical
R928, hamamatsu
H7828
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Sharp Semiconductor Lasers
Abstract: AU4A transistor QB tensile-strength thermopile array BREAK FAILURE INDICATOR APPLICATIONS LIST relay failure analysis CRACK DETECTION PATTERNS gold wire bound failures due to ultrasonic cleaning 2n2222 micro electronics
Text: Application Note Optoelectronics Failure Analysis of Optoelectronic Devices DEFINITIONS • US Military Standard: MIL-STD-883 Method 5003 Failure Analysis Procedures for Microcircuits – Failure analysis is a post-mortem examination of a failed device employing, as required, electrical
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SMA04033
Sharp Semiconductor Lasers
AU4A
transistor QB
tensile-strength
thermopile array
BREAK FAILURE INDICATOR APPLICATIONS LIST
relay failure analysis
CRACK DETECTION PATTERNS
gold wire bound failures due to ultrasonic cleaning
2n2222 micro electronics
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Untitled
Abstract: No abstract text available
Text: TM September 2013 • What are Semiconductor Devices? • How Semiconductors are Made − Front-End Process − Back-End Process • Fabrication Facility and Equipment Issues • Business Aspects of Supplying Semiconductors TM 2 TM 4 A conductor carries electricity like a pipe
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ujt 2646
Abstract: TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download
Text: D a t a B o o k , J a n. 20 0 1 GaAs Components N e v e r s t o p t h i n k i n g . Edition 2001-01-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2001. All Rights Reserved. Attention please!
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D-81541
14-077S
Q62702-D1353
Q62702-G172
Q62702-G173
ujt 2646
TRANSISTOR J 5804
label infineon barcode
msc 1697
MSC 1697 IC pin diagram
Rohde und Schwarz Active Antenna HE 011
cd 6283 audio
smd transistor v75
log tx2 0909
IC data book free download
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