NPTB0004
Abstract: GaN amplifier 100W GaN Bias 25 watt vmos fet NPT25100 NPTB00004 NPTB00025 GaN amplifier temperature compensation future scope of wiMAX NPT25015
Text: APPLICATION NOTE AN-010 GaN Essentials AN-010: GaN for LDMOS Users NITRONEX CORPORATION 1 JUNE 2008 APPLICATION NOTE AN-010 GaN Essentials: GaN for LDMOS Users 1. Table of Contents 1. TABLE OF CONTENTS. 2
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AN-010
AN-010:
NPT25100
NPTB0004
GaN amplifier 100W
GaN Bias 25 watt
vmos fet
NPTB00004
NPTB00025
GaN amplifier temperature compensation
future scope of wiMAX
NPT25015
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28F0181-1SR-10
Abstract: CAPACITOR 150 RED
Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RF3928280W
RF3928
RF3928
DS120508
28F0181-1SR-10
CAPACITOR 150 RED
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GaN ADS
Abstract: GaN amplifier 120W transistor hemt RF393x
Text: RFMD. High Power GaN Unmatched Power Transistors UPT Introducing the development of Our GaN unmatched power transistor (UPT) family comprised solely of gallium nitride (GaN) transistors. Using an advanced 0.5µm GaN high electron mobility transistor (HEMT) semiconductor process,
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RF393x
900MHz
220mA)
220mA,
RF3934
440mA)
900MHz)
GaN ADS
GaN amplifier 120W
transistor hemt
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GaN amplifier
Abstract: GaN amplifier 100W GaAs HEMTs X band 25W Amplifier Research NPT25100 NPTB00050 high power fet amplifier schematic an-013 nitronex Amplifier Research rf power amplifier schematic broadband impedance transformation
Text: APPLICATION NOTE AN-013 GaN Essentials AN-013: Broadband Performance of GaN HEMTs NITRONEX CORPORATION 1 MAY 2009 APPLICATION NOTE AN-013 GaN Essentials: Broadband Performance of GaN HEMTs 1. Table of Contents 1. TABLE OF CONTENTS. 2
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AN-013
AN-013:
NPTB00004
12-Watt
NPT25100
MRF6S9125
GaN amplifier
GaN amplifier 100W
GaAs HEMTs X band
25W Amplifier Research
NPTB00050
high power fet amplifier schematic
an-013 nitronex
Amplifier Research rf power amplifier schematic
broadband impedance transformation
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X-band Gan Hemt
Abstract: GaN amplifier Gan on silicon substrate rf gan amplifier MMIC X-band amplifier x-Band Hemt Amplifier AlGaN/GaN HEMTs Gan on silicon transistor Gan transistor k 1535
Text: APPLICATION NOTE AN-011 GaN Essentials AN-011: Substrates for GaN RF Devices NITRONEX CORPORATION 1 JUNE 2008 APPLICATION NOTE AN-011 GaN Essentials: Substrates for GaN RF Devices 1. Table of Contents 1. Table of Contents. 2
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AN-011
AN-011:
X-band Gan Hemt
GaN amplifier
Gan on silicon substrate
rf gan amplifier
MMIC X-band amplifier
x-Band Hemt Amplifier
AlGaN/GaN HEMTs
Gan on silicon transistor
Gan transistor
k 1535
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Untitled
Abstract: No abstract text available
Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RF3928
RF3928280W
DS120508
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Untitled
Abstract: No abstract text available
Text: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features Wideband Operation: 0.96GHz to 1.215GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RFHA1025
RFHA1025
96GHz
215GHz
DS120613
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ATC100B620
Abstract: L22 amplifier Gan hemt transistor RFMD
Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RF3928280W
RF3928
RF3928
DS120119
ATC100B620
L22 amplifier
Gan hemt transistor RFMD
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NPTB00004
Abstract: NPT25015 ofdm equations NPT1004 NPT35015 Nitron NPT25100 transistor study NPTB00025 AN-012
Text: APPLICATION NOTE AN-012 GaN Essentials AN-012: Thermal Considerations for GaN Technology NITRONEX CORPORATION 1 JUNE 2008 APPLICATION NOTE AN-012 GaN Essentials: Thermal Considerations for GaN Technology 1. Table of Contents 1. TABLE OF CONTENTS. 2
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AN-012
AN-012:
64-QAM
NPTB00004
NPT25015
ofdm equations
NPT1004
NPT35015
Nitron
NPT25100
transistor study
NPTB00025
AN-012
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Untitled
Abstract: No abstract text available
Text: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN Wideband Pulsed Power Amplifier Package: Flanged Ceramic, 2-Pin Features Wideband Operation: 0.96GHz to 1.215GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RFHA1025
RFHA1025
96GHz
215GHz
DS120928
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Untitled
Abstract: No abstract text available
Text: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features Wideband Operation: 0.96GHz to 1.215GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RFHA1025
96GHz
215GHz
DS120613
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RF3928B
Abstract: power transistor gan s-band RF392
Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RF3928B
RF3928B
DS111208
power transistor gan s-band
RF392
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CMPA2560025F
Abstract: CMPA2560025F-TB c08bl242x
Text: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA2560025F
CMPA2560025F
CMPA25
60025Fs
CMPA2560025F-TB
c08bl242x
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CMPA0060002D
Abstract: bonding wire cree
Text: CMPA0060002D 2 Watt, 20 MHz - 6000 MHz GaN HEMT MMIC Power Amplifier Cree’s CMPA0060002D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon
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CMPA0060002D
CMPA0060002D
CMPA00
bonding wire cree
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GaN amplifier temperature compensation
Abstract: GAN temperature compensation 20k ohm potentiometer GaN amplifier hemt biasing thermistor 40k table NPTB00025 GaN Bias 25 watt NPT25100 AN009
Text: APPLICATION NOTE AN-009 GaN Essentials AN-009: Bias Sequencing and Temperature Compensation for GaN HEMTs NITRONEX CORPORATION 1 OCTOBER 2008 APPLICATION NOTE AN-009 GaN Essentials: Bias Sequencing and Temperature Compensation of GaN HEMTs 1. Table of Contents
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AN-009
AN-009:
NPT25100
GaN amplifier temperature compensation
GAN temperature compensation
20k ohm potentiometer
GaN amplifier
hemt biasing
thermistor 40k table
NPTB00025
GaN Bias 25 watt
AN009
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Untitled
Abstract: No abstract text available
Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RF3928B
DS120503
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Untitled
Abstract: No abstract text available
Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RF3928B
RF3928B
DS120503
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GaN hemt
Abstract: power transistor gan s-band air surveillance system diagram using radar
Text: RF3928 RF3928280 W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RF3928280
RF3928
RF3928
DS110720
GaN hemt
power transistor gan s-band
air surveillance system diagram using radar
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Untitled
Abstract: No abstract text available
Text: CMPA2735075F 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA2735075F
CMPA2735075F
CMPA27
35075F
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CMPA2560025F
Abstract: CMPA2560025F-TB Cree Microwave c08bl242x C08BL242X-5UN-X0T
Text: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA2560025F
CMPA2560025F
CMPA25
60025Fs
CMPA2560025F-TB
Cree Microwave
c08bl242x
C08BL242X-5UN-X0T
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Untitled
Abstract: No abstract text available
Text: CMPA2560025D 25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2560025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA2560025D
CMP2560025D
CMPA25
CMPA2560025D
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Untitled
Abstract: No abstract text available
Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA5585025F
CMPA5585025F
CMPA55
85025F
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CMPA5585025F
Abstract: power transistor gaas x-band CMPA5585025F-TB
Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA5585025F
CMPA5585025F
CMPA55
85025F
power transistor gaas x-band
CMPA5585025F-TB
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Untitled
Abstract: No abstract text available
Text: CMPA0060002D 2 Watt, 20 MHz - 6000 MHz GaN HEMT MMIC Power Amplifier Cree’s CMPA0060002D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon
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CMPA0060002D
CMPA0060002D
CMPA00
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