GAN AMPLIFIERS Search Results

GAN AMPLIFIERS Result Highlights (5)

Part	Manufacturer	Description
ADPA1105ACGZN-R7	Analog Devices	1.2-1.4 GHz 35W GaN PA
HMC8415LP6GETR	Analog Devices	9.3-9.5 GHz GaN PA
ADPA1105ACGZN	Analog Devices	1.2-1.4 GHz 35W GaN PA
HMC8415LP6GE	Analog Devices	9.3-9.5 GHz GaN PA
HMC8500PM5E	Analog Devices	High Power GaN Amps- 10W 1 - 2

GAN AMPLIFIERS Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
NPTB0004 Abstract: GaN amplifier 100W GaN Bias 25 watt vmos fet NPT25100 NPTB00004 NPTB00025 GaN amplifier temperature compensation future scope of wiMAX NPT25015 Text: APPLICATION NOTE AN-010 GaN Essentials AN-010: GaN for LDMOS Users NITRONEX CORPORATION 1 JUNE 2008 APPLICATION NOTE AN-010 GaN Essentials: GaN for LDMOS Users 1. Table of Contents 1. TABLE OF CONTENTS. 2	Original	PDF	AN-010 AN-010: NPT25100 NPTB0004 GaN amplifier 100W GaN Bias 25 watt vmos fet NPTB00004 NPTB00025 GaN amplifier temperature compensation future scope of wiMAX NPT25015
GaN ADS Abstract: GaN amplifier 120W transistor hemt RF393x Text: RFMD. High Power GaN Unmatched Power Transistors UPT Introducing the development of Our GaN unmatched power transistor (UPT) family comprised solely of gallium nitride (GaN) transistors. Using an advanced 0.5µm GaN high electron mobility transistor (HEMT) semiconductor process,	Original	PDF	RF393x 900MHz 220mA) 220mA, RF3934 440mA) 900MHz) GaN ADS GaN amplifier 120W transistor hemt
X-band Gan Hemt Abstract: GaN amplifier Gan on silicon substrate rf gan amplifier MMIC X-band amplifier x-Band Hemt Amplifier AlGaN/GaN HEMTs Gan on silicon transistor Gan transistor k 1535 Text: APPLICATION NOTE AN-011 GaN Essentials AN-011: Substrates for GaN RF Devices NITRONEX CORPORATION 1 JUNE 2008 APPLICATION NOTE AN-011 GaN Essentials: Substrates for GaN RF Devices 1. Table of Contents 1. Table of Contents. 2	Original	PDF	AN-011 AN-011: X-band Gan Hemt GaN amplifier Gan on silicon substrate rf gan amplifier MMIC X-band amplifier x-Band Hemt Amplifier AlGaN/GaN HEMTs Gan on silicon transistor Gan transistor k 1535
Gan hemt transistor RFMD Abstract: RF393x transistor hemt RF3930 HIGH POWER TRANSISTOR rf gan amplifier GaN amplifier 120W silicon carbide power transistor gaas RF3933 Text: GaN Technology Update Technical Update RFMD RFMD® GaN High-Power Transistors Gallium Nitride GaN High Power Transistors Features: • High power density of up to 5W/mm • Advanced 0.5 m GaN HEMT process • 50V bias operation • High gain > 14 dB @ 2.1GHz	Original	PDF
GaN ADS Abstract: Triangle Microwave cree Cree Microwave GaN amplifier PAE1 jammer nichrome GaN PA cree gate resistor Text: GaN MMIC Foundry Services GaN-based HEMTs Broadband performance - Enables high power, multi-octave bandwidth amplifiers Cree’s GaN HEMT MMIC processes are available for MMIC development using full-wafer service FWS or a shared multi-project MASK SET (SM) fabrication service. Customers can design into the foundry using	Original	PDF
GaN ADS Abstract: cree led "silicon carbide" FET cree cree rf GaN hemt silicon carbide LED silicon carbide LED cree cree gan Text: GaN MMIC Foundry Services GaN-based HEMTs Broadband performance - Enables high power, multi-octave bandwidth amplifiers Cree’s GaN HEMT MMIC processes are available for MMIC development using standard full-wafer SFW service or a shared multi-project (SMP) “pizza mask” fabrication service. Customers can design into	Original	PDF
Untitled Abstract: No abstract text available Text: September 30, 2014 MACOM Extends Industry Leading GaN Portfolio with S-Band High Power Pallet and Hybrid Amplifiers 350 Wpk GaN Power Pallet, MAPG-002729-350L00, provides rugged, high power solution in small size 85 Wpk GaN Hybrid Amplifier, MAMG-002735-085L0L, offers integrated, fully matched SMT solution	Original	PDF	MAPG-002729-350L00, MAMG-002735-085L0L, MAMG-002735-030L0L, com/multimedia/home/20140930005146/en/
Gan hemt transistor RFMD Abstract: RF3932 HIGH POWER TRANSISTOR RF393x Gan transistor rf3931 RF3930 GaN amplifier RF3933 RF3934 Text: RFMD. Gallium Nitride GaN High Power Transistors (Advance Notification) Introducing the development of RFMD’s unmatched high power transistor (HPT) family comprised solely of gallium nitride (GaN) transistors. Using an advanced 0.5um GaN high electron	Original	PDF	RF393x RF3933 RF3934 Gan hemt transistor RFMD RF3932 HIGH POWER TRANSISTOR Gan transistor rf3931 RF3930 GaN amplifier RF3933 RF3934
28F0181-1SR-10 Abstract: CAPACITOR 150 RED Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 	Original	PDF	RF3928280W RF3928 RF3928 DS120508 28F0181-1SR-10 CAPACITOR 150 RED
Untitled Abstract: No abstract text available Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 	Original	PDF	RF3928 RF3928280W DS120508
Untitled Abstract: No abstract text available Text: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features  Wideband Operation: 0.96GHz to 1.215GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 	Original	PDF	RFHA1025 RFHA1025 96GHz 215GHz DS120613
ATC100B620 Abstract: L22 amplifier Gan hemt transistor RFMD Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 	Original	PDF	RF3928280W RF3928 RF3928 DS120119 ATC100B620 L22 amplifier Gan hemt transistor RFMD
Untitled Abstract: No abstract text available Text: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN Wideband Pulsed Power Amplifier Package: Flanged Ceramic, 2-Pin Features  Wideband Operation: 0.96GHz to 1.215GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 	Original	PDF	RFHA1025 RFHA1025 96GHz 215GHz DS120928
Untitled Abstract: No abstract text available Text: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features  Wideband Operation: 0.96GHz to 1.215GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 	Original	PDF	RFHA1025 96GHz 215GHz DS120613

CMPA2560025F Abstract: CMPA2560025F-TB c08bl242x Text: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	PDF	CMPA2560025F CMPA2560025F CMPA25 60025Fs CMPA2560025F-TB c08bl242x
CMPA0060002D Abstract: bonding wire cree Text: CMPA0060002D 2 Watt, 20 MHz - 6000 MHz GaN HEMT MMIC Power Amplifier Cree’s CMPA0060002D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon	Original	PDF	CMPA0060002D CMPA0060002D CMPA00 bonding wire cree
CMPA2735075F Abstract: IDQ Freq Products RF-35-0100-CH Text: CMPA2735075F 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	PDF	CMPA2735075F CMPA2735075F CMPA27 35075F 78001SA IDQ Freq Products RF-35-0100-CH
Untitled Abstract: No abstract text available Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 	Original	PDF	RF3928B DS120503
Untitled Abstract: No abstract text available Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 	Original	PDF	RF3928B RF3928B DS120503
GaN hemt Abstract: power transistor gan s-band air surveillance system diagram using radar Text: RF3928 RF3928280 W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 	Original	PDF	RF3928280 RF3928 RF3928 DS110720 GaN hemt power transistor gan s-band air surveillance system diagram using radar
Untitled Abstract: No abstract text available Text: CMPA2735075F 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	PDF	CMPA2735075F CMPA2735075F CMPA27 35075F
GaN TRANSISTOR Abstract: RF3932 rf3931 RF3934 RF3933 RF393x transistor hemt Text: RFMD . Gallium Nitride High Power Transistors Introducing the development of RFMD’s GaN unmatched power transistor UPT family comprised solely of gallium nitride (GaN) transistors. Using an advanced 0.5 µm GaN high electron mobility transistor (HEMT) semiconductor	Original	PDF	RF393x simple40 GaN TRANSISTOR RF3932 rf3931 RF3934 RF3933 transistor hemt
CMPA2560025F Abstract: CMPA2560025F-TB Cree Microwave c08bl242x C08BL242X-5UN-X0T Text: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	PDF	CMPA2560025F CMPA2560025F CMPA25 60025Fs CMPA2560025F-TB Cree Microwave c08bl242x C08BL242X-5UN-X0T
Untitled Abstract: No abstract text available Text: CMPA2560025D 25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2560025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	PDF	CMPA2560025D CMP2560025D CMPA25 CMPA2560025D

GAN AMPLIFIERS Search Results

GAN AMPLIFIERS Result Highlights (5)

GAN AMPLIFIERS Datasheets Context Search

NPTB0004

GaN ADS

X-band Gan Hemt

Gan hemt transistor RFMD

GaN ADS

GaN ADS

Untitled

Gan hemt transistor RFMD

28F0181-1SR-10

Untitled

Untitled

ATC100B620

Untitled

Untitled

CMPA2560025F

CMPA0060002D

CMPA2735075F

Untitled

Untitled

GaN hemt

Untitled

GaN TRANSISTOR

CMPA2560025F

Untitled