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    GAN HEMT X BAND Search Results

    GAN HEMT X BAND Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CLF1G0035-200P Rochester Electronics Broadband RF power GaN HEMT Visit Rochester Electronics Buy
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0508MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-8V GAN Visit Murata Manufacturing Co Ltd

    GAN HEMT X BAND Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CGHV1F025S 25 W, DC - 15 GHz, 40V, GaN HEMT Cree’s CGHV1F025S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S, C, X and


    Original     		PDF CGHV1F025S CGHV1F025S

    Untitled

    Abstract: No abstract text available
    Text: CGHV1F006S 6 W, DC - 18 GHz, 40V, GaN HEMT Cree’s CGHV1F006S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S, C, X and


    Original     		PDF CGHV1F006S CGHV1F006S

    Untitled

    Abstract: No abstract text available
    Text: CGHV1F025S 25 W, DC - 15 GHz, 40V, GaN HEMT Cree’s CGHV1F025S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S, C, X and


    Original     		PDF CGHV1F025S CGHV1F025S

    Untitled

    Abstract: No abstract text available
    Text: RFSW2100 45W GaN-onSiC Reflective SPDT RF Switch RFSW2100 Proposed 45W GaN-ON-SiC REFLECTIVE SPDT RF SWITCH Package: QFN, 12-Pin, 3mm x 3mm Features  Broadband Operation 30MHz to 6GHz  Advanced GaN HEMT Technology  2GHz Typical Performance  Insertion Loss <0.4dB


    Original     		PDF RFSW2100 12-Pin, 30MHz DS120614

    SW2100D

    Abstract: RFSW2100D ds1303
    Text: R RFSW2 2100D 55W GaN-on-SiC Refflective SPD DT RF Switch Bare Die 1mm x 0.8m mm Features • Broadban nd Operation 30 0MHz - 6GHz  Advanced d GaN HEMT Tecchnology  2GHz Typical Performancce o Insertio on Loss = 0.34d dB o Isolation = 37dB o P0.1dB of


    Original     		PDF 2100D RFSW2100D DS130314 SW2100D ds1303

    Untitled

    Abstract: No abstract text available
    Text: SGK0910-60A-R X-Band Internally Matched GaN-HEMT FEATURES  High Output Power: P5dB=48.0dBm Typ.  High Gain: GL=12.0dB (Typ.)  High PAE: add=35% (Typ.)  Broad Band: 9.2 to 10.0GHz  Impedance Matched Zin/Zout = 50ohm  Hermetically Sealed Package


    Original     		PDF SGK0910-60A-R 50ohm SGK0910-60A-R 50ohm

    SGK0910-120A-R

    Abstract: No abstract text available
    Text: SGK0910-120A-R X-Band Internally Matched GaN-HEMT FEATURES  High Output Power: P5dB=51.0dBm Typ.  High Gain: GL=11.5dB (Typ.)  High PAE: add=35% (Typ.)  Broad Band: 9.2 to 10.0GHz  Impedance Matched Zin/Zout = 50ohm  Hermetically Sealed Package


    Original     		PDF SGK0910-120A-R 50ohm SGK0910-120A-R 50ohm

    Untitled

    Abstract: No abstract text available
    Text: SGK0910-30A-R X-Band Internally Matched GaN-HEMT FEATURES  High Output Power: P5dB=45.0dBm Typ.  High Gain: GL=12.0dB (Typ.)  High PAE: add=35% (Typ.)  Broad Band: 9.2 to 10.0GHz  Impedance Matched Zin/Zout = 50ohm  Hermetically Sealed Package


    Original     		PDF SGK0910-30A-R 50ohm SGK0910-30A-R 50ohm

    Untitled

    Abstract: No abstract text available
    Text: MECKULNAT Ku-Band GaN HEMT Low Noise Amplifier VG1 VD1 VG2 VD2 Main Features VG3 VD3 RFin 0.25 µm GaN HEMT Technology 12 – 15 GHz full performance Frequency Range Small Signal Gain > 22 dB Noise Figure: < 1.75 dB P1dB > 21 dBm, Psat > 27 dBm Output TOI > 29 dBm


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MECKULNA1 Ku-Band GaN HEMT Low Noise Amplifier VG1 VD1 VG2 VD2 Main Features VG3 VD3 RFin RFout Product Description MECKULNA1 is a 0.25µm GaN HEMT based Low Noise Amplifier designed by MEC for Ku-Band applications. 0.25µm GaN HEMT Technology 12– 16 GHz full performance Frequency


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MECKULNA2 Ku-Band GaN HEMT Low Noise Amplifier VG1 VD1 VG2 VD2 Main Features VG3 VD3 RFin 0.25 µm GaN HEMT Technology 13 – 16 GHz full performance Frequency Range Small Signal Gain > 24.5 dB Noise Figure: < 2.5 dB P1dB > 21.5 dBm, Psat > 29.5 dBm Output TOI > 30 dBm


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaN HEMT TGI7785-120L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 51.0dBm at Pin= 44.0dBm ･HIGH GAIN GL= 11.0dB at Pin= 20.0dBm ･LOW INTERMODULATION DISTORTION IM3 Min. = 25dBc at Po=44.0dBm Single Carrier Level


    Original     		PDF TGI7785-120L 25dBc 20dBm No1215

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaN HEMT TGI7785-120L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 51.0dBm at Pin= 44.0dBm ･HIGH GAIN GL= 11.0dB at Pin= 20.0dBm ･LOW INTERMODULATION DISTORTION IM3 Min. = 25dBc at Po=44.0dBm Single Carrier Level


    Original     		PDF TGI7785-120L 25dBc 20dBm No1225

    GaN ADS

    Abstract: Triangle Microwave cree Cree Microwave GaN amplifier PAE1 jammer nichrome GaN PA cree gate resistor
    Text: GaN MMIC Foundry Services GaN-based HEMTs Broadband performance - Enables high power, multi-octave bandwidth amplifiers Cree’s GaN HEMT MMIC processes are available for MMIC development using full-wafer service FWS or a shared multi-project MASK SET (SM) fabrication service. Customers can design into the foundry using


    Original     		PDF

    CGH40025P

    Abstract: CGH40010P cgh60015 GaN ADS Gan hemt transistor x band cgh40120F cgh40045f CGH60015D CGH60060D CGH60030D cgh60120D
    Text: General Purpose Wide Bandgap Transistors Gallium Nitride GaN HEMTs for Broadband Applications Broadband performance - Enables high power, multi-octave bandwidth amplifiers This “general purpose” discrete device series features Cree’s GaN HEMTs. These unmatched packaged transistors


    Original     		PDF

    CGH35015

    Abstract: energy efficient wide bandgap devices 12 VOLTS INVERTER CIRCUIT USING MOSFET Infineon CoolMOS SMPS CIRCUIT DIAGRAM USING TRANSISTORS HEMT difference between IGBT and MOSFET IN inverter SMPS research paper High Voltage RF LDMOS Technology for Broadcast Applications SiC MOSFET
    Text: Energy Efficient Wide Bandgap Devices John W. Palmour Cree, Inc., 4600 Silicon Dr., Durham, NC, 27703, USA Abstract. As wide bandgap devices begin to become commercially available, it is becoming clear that electrical efficiency improvement is one of the key drivers for their adoption. For RF


    Original     		PDF

    X-band Gan Hemt

    Abstract: GaN amplifier Gan on silicon substrate rf gan amplifier MMIC X-band amplifier x-Band Hemt Amplifier AlGaN/GaN HEMTs Gan on silicon transistor Gan transistor k 1535
    Text: APPLICATION NOTE AN-011 GaN Essentials AN-011: Substrates for GaN RF Devices NITRONEX CORPORATION 1 JUNE 2008 APPLICATION NOTE AN-011 GaN Essentials: Substrates for GaN RF Devices 1. Table of Contents 1. Table of Contents. 2


    Original     		PDF AN-011 AN-011: X-band Gan Hemt GaN amplifier Gan on silicon substrate rf gan amplifier MMIC X-band amplifier x-Band Hemt Amplifier AlGaN/GaN HEMTs Gan on silicon transistor Gan transistor k 1535

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaN HEMT TGI7785-50L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 47.0dBm at Pin= 40.0dBm ･HIGH GAIN GL= 11.0dB at 7.7GHz to 8.5GHz ･LOW INTERMODULATION DISTORTION IM3 Min. = 40dBc at Po=32.0dBm Single Carrier Level


    Original     		PDF TGI7785-50L 40dBc 7-AA04A) No1209

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaN HEMT TGI7785-25L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 44.5dBm at Pin= 35.0dBm ･HIGH GAIN GL= 12.0dB at 7.7GHz to 8.5GHz ･LOW INTERMODULATION DISTORTION IM3 Min. = 40dBc at Po=29.0dBm Single Carrier Level


    Original     		PDF TGI7785-25L 40dBc 7-AA04A) No1214

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaN HEMT TGI5867-25L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 44.5dBm at Pin= 35.0dBm ･HIGH GAIN GL= 13.5dB at 5.85GHz to 6.75GHz ･LOW INTERMODULATION DISTORTION IM3 Min. = -40dBc at Po=29.0dBm Single Carrier Level


    Original     		PDF TGI5867-25L 85GHz 75GHz -40dBc 20dBm 7-AA04A) No1226

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaN HEMT TGI0910-50 FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 47.0dBm at Pin= 41.0dBm ･HIGH GAIN GL= 9.0dB at 9.5GHz to 10.5GHz ･HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Ta= 25C


    Original     		PDF TGI0910-50 20dBm 7-AA04A) No1217

    TGI8596-50

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaN HEMT TGI8596-50 FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 47.0dBm at Pin= 41.0dBm ･HIGH GAIN GL= 9.0dB at 8.5GHz to 9.6GHz ･HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Ta= 25C


    Original     		PDF TGI8596-50 20dBm 7-AA04A) No1216 TGI8596-50

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaN HEMT TGI5867-50L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 47.0dBm at Pin= 39.0dBm ･HIGH GAIN GL= 13.5dB at 5.85GHz to 6.75GHz ･LOW INTERMODULATION DISTORTION IM3 Min. = -40dBc at Po=32.0dBm Single Carrier Level


    Original     		PDF TGI5867-50L 85GHz 75GHz -40dBc 20dBm 7-AA04A) No1227

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaN HEMT TGI7785-25L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 44.5dBm at Pin= 35.0dBm ･HIGH GAIN GL= 12.0dB at 7.7GHz to 8.5GHz ･LOW INTERMODULATION DISTORTION IM3 Min. = 40dBc at Po=29.0dBm Single Carrier Level


    Original     		PDF TGI7785-25L 40dBc 7-AA04A) No1223